VSKDU300/06PbF
Vishay Semiconductors
INT-A-PAK Power Modules Ultrafast Diodes, 300 A
FEATURES
• Electrically insulated by DBC ceramic
• 3500 V
RMS
isolating voltage
• Standard JEDEC package
• Simplified mechanical designs, rapid assembly
• High surge capability
• Large creepage distances
• UL approved file E78996
INT-A-PAK
• Case style INT-A-PAK
• Compliant to RoHS directive 2002/95/EC
300 A at 48 °C
600 V
130 ns
230 A at 100 °C
PRODUCT SUMMARY
I
F(AV)
at T
C
V
R
t
rr
(typical)
I
F(DC)
at T
C
• Designed and qualified for industrial level
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Cathode to anode voltage
Continuous forward current per leg
Single pulse forward current
Maximum power dissipation per leg
Operating junction and storage
temperature range
RMS insulation voltage
SYMBOL
V
R
I
F
I
FSM
P
D
T
J
, T
Stg
V
INS
50 Hz, circuit to base,
all terminals shorted, t = 1 s
T
C
= 25 °C
T
C
= 100 °C
Limited by junction temperature
T
C
= 25 °C
T
C
= 100 °C
TEST CONDITIONS
VALUES
600
435
230
TBD
781
313
- 40 to 150
3500
W
°C
V
A
UNITS
V
ELECTRICAL SPECIFICATIONS
(T
J
= 25 °C unless otherwise specified)
PARAMETER
Cathode to anode breakdown voltage
SYMBOL
V
BR
TEST CONDITIONS
I
R
= 500 μA
I
F
= 150 A
Forward voltage drop per leg
V
FM
I
F
= 300 A
I
F
= 150 A, T
J
= 125 °C
I
F
= 300 A, T
J
= 125 °C
Maximum reverse leakage current
I
RM
T
J
= 150 °C, V
R
= 600 V
MIN.
600
-
-
-
-
-
TYP.
-
1.23
1.43
1.11
1.39
-
MAX.
-
1.53
1.96
1.29
1.73
50
mA
V
UNITS
Document Number: 94549
Revision: 19-May-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
1
VSKDU300/06PbF
Vishay Semiconductors
INT-A-PAK Power Modules
Ultrafast Diodes, 300 A
DYNAMIC RECOVERY CHARACTERISTICS
(T
J
= 25 °C unless otherwise specified)
PARAMETER
Reverse recovery time
SYMBOL
t
rr
I
rr
Q
rr
dI
(rec)M
/dt
s
T
J
= 25 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 125 °C
T
J
= 125 °C
I
F
= 50 A, T
J
= 25 °C, dI/dt = 400 A/μs, V
R
= 200 V
I
F
= 50 A, T
J
= 125 °C, dI/dt = 400 A/μs, V
R
= 200 V
I
F
= 50 A
dI/dt = 200 A/μs
V
R
= 400 V (per leg)
TEST CONDITIONS
MIN.
-
-
-
-
-
-
-
-
-
TYP.
130
195
11
20
670
1800
-
0.2
0.22
MAX.
165
260
18
30
1485
3900
400
-
-
UNITS
ns
Peak recovery current
A
Reverse recovery charge
Peak rate of recovery current
Softness factor per leg
nC
A/μs
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction operating and
storage temperature range
Maximum thermal resistance,
junction to case per leg
Typical thermal resistance,
case to heatsink
Mounting
torque ± 10 %
to heatsink
busbar
SYMBOL
T
J
, T
Stg
R
thJC
R
thCS
DC operation
Mounting surface, flat, smooth and greased
A mounting compound is recommended and the
torque should be rechecked after a period of 3 hours
to allow the spread of the compound.
TEST CONDITIONS
VALUES
- 40 to 150
0.16
K/W
0.05
UNITS
°C
4 to 6
200
Nm
g
oz.
INT-A-PAK
Approximate weight
7.1
Case style
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2
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 94549
Revision: 19-May-10
VSKDU300/06PbF
INT-A-PAK Power Modules
Ultrafast Diodes, 300 A
I
F
- Instantaneous Forward Current (A)
1000
100
Vishay Semiconductors
I
R
- Reverse Current (mA)
T
J
= 150 °C
10
T
J
= 150 °C
100
T
J
= 25 °C
10
1
0.1
0.01
T
J
= 25 °C
1
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
0.001
100
94549_02
200
300
400
500
600
94549_01
V
FM
- Forward Voltage Drop (V)
V
R
- Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
Fig. 1 - Maximum Forward Voltage Drop Characteristics
Allowable Case Temperature (°C)
160
140
120
100
DC
80
60
40
20
0
0
100
200
300
400
500
Square
wave (D = 0.50)
94549_03
I
F(AV)
- Average Forward Current (A)
Fig. 3 - Maximum Allowable Case Temperature vs. Average Forward Current
Z
thJC
- Thermal Impedance (°C/W)
1
0.1
0.01
Single
pulse
(thermal resistance)
0.001
0.00001
0.0001
0.001
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
0.01
0.1
1
10
94549_04
t
1
- Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics
Document Number: 94549
Revision: 19-May-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
3
VSKDU300/06PbF
Vishay Semiconductors
900
800
INT-A-PAK Power Modules
Ultrafast Diodes, 300 A
10 000
V
R
= 400 V
Average Power Loss (W)
700
RMS limit
600
500
400
300
200
100
0
0
100
200
300
400
500
100
100
94549_07
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
DC
Q
rr
(nC)
1000
I
F
= 50 A, T
J
= 25 °C
1000
94549_05
I
F(AV)
- Average Forward Current (A)
Fig. 5 - Forward Power Loss Characteristics
dI
F
/dt (A/μs)
Fig. 7 - Typical Reverse Recovery Charge vs.
dI
F
/dt (Per Leg)
1000
V
R
= 400 V
100
V
R
= 400 V
t
rr
(ns)
I
rr
(A)
I
F
= 50 A, T
J
= 25 °C
100
10
I
F
= 50 A, T
J
= 25 °C
1
100
94549_08
10
100
94549_06
1000
1000
dI
F
/dt (A/μs)
Fig. 6 - Typical Reverse Recovery Time vs.
dI
F
/dt (Per Leg)
dI
F
/dt (A/μs)
Fig. 8 - Typical Reverse Recovery Current vs.
dI
F
/dt (Per Leg)
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4
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 94549
Revision: 19-May-10
VSKDU300/06PbF
INT-A-PAK Power Modules
Ultrafast Diodes, 300 A
ORDERING INFORMATION TABLE
Device code
Vishay Semiconductors
VSK
1
1
2
3
4
5
6
-
-
-
-
-
-
D
2
U
3
300
4
/
06
5
PbF
6
Module type
Circuit configuration:
D = Doubler, 2 diodes in series
U = Ultrafast diode
Current rating (300 = 300 A)
Voltage rating (06 = 600 V)
PbF = Lead (Pb)-free
CIRCUIT CONFIGURATION
(1)
~
+
(2)
-
(3)
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95254
Document Number: 94549
Revision: 19-May-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
5
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