VSKDS403/100P
Vishay High Power Products
Schottky Rectifier, 200 A
FEATURES
• 175 °C T
J
operation
• Low forward voltage drop
• High frequency operation
• Guard ring for enhanced ruggedness and long term
reliability
• UL pending
ADD-A-PAK
• Totally lead (Pb)-free, RoHS compliant
• Designed and qualified for industrial level
PRODUCT SUMMARY
I
F(AV)
200 A
MECHANICAL DESCRIPTION
The Generation 5 of ADD-A-PAK module combine the
excellent thermal performance obtained by the usage of
direct bonded copper substrate with superior mechanical
ruggedness, thanks to the insertion of a solid copper
baseplate at the bottom side of the device.
The Cu baseplate allow an easier mounting on the majority
of heatsink with increased tolerance of surface roughness
and improved thermal spread.
The Generation 5 of ADD-A-PAK module is manufactured
without hard mold, eliminating in this way any possible direct
stress on the leads.
The electrical terminals are secured against axial pull-out:
they are fixed to the module housing via a click-stop feature
already tested and proved as reliable on other Vishay HPP
modules.
DESCRIPTION
The VSKDS403.. Schottky rectifier doubler module has been
optimized for low reverse leakage at high temperature. The
proprietary barrier technology allows for reliable operation up
to 175 °C junction temperature.
Typical applications are in high current switching power
supplies, plating power supplies, UPS systems, converters,
freewheeling diodes, welding, and reverse battery
protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
I
F(AV)
V
RRM
I
FSM
V
F
T
J
t
p
= 5 µs sine
200 Apk, T
J
= 125 °C
Range
CHARACTERISTICS
Rectangular waveform
VALUES
200
100
25 500
0.8
- 55 to 175
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak reverse voltage
SYMBOL
V
R
V
RWM
VSKDS403/100P
100
UNITS
V
Document Number: 94451
Revision: 25-Apr-08
For technical questions, contact: ind-modules@vishay.com
www.vishay.com
1
VSKDS403/100P
Vishay High Power Products
Schottky Rectifier, 200 A
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average forward current
Maximum peak one cycle
non-repetitive surge current
Non-repetitive avalanche energy
Repetitive avalanche current
SYMBOL
I
F(AV)
I
FSM
10 ms sine or 6 ms rect. pulse
E
AS
I
AR
TEST CONDITIONS
50 % duty cycle at T
C
= 107 °C, rectangular waveform
5 µs sine or 3 µs rect. pulse
Following any rated load
condition and with rated
V
RRM
applied
VALUES
200
25 500
3300
15
1
mJ
A
A
UNITS
T
J
= 25 °C, I
AS
= 5.5 Amps, L = 1 mH
Current decaying linearly to zero in 1 µs
Frequency limited by T
J
maximum V
A
= 1.5 x V
R
typical
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
200 A
Maximum forward voltage drop
V
FM (1)
400 A
200 A
400 A
Maximum reverse leakage current
Maximum junction capacitance
Typical series inductance
Maximum voltage rate of change
RMS insulation voltage
Note
(1)
Pulse width < 500 µs
I
RM (1)
C
T
L
S
dV/dt
V
INS
T
J
= 25 °C
T
J
= 125 °C
TEST CONDITIONS
T
J
= 25 °C
VALUES
0.93
1.24
0.8
1.05
6
80
5500
5.0
10 000
3500
mA
pF
nH
V/µs
V
V
UNITS
T
J
= 125 °C
V
R
= Rated V
R
V
R
= 5 V
DC
(test signal range 100 kHz to 1 MHz) 25 °C
From top of terminal hole to mounting plane
Rated V
R
50 Hz, circuit to base, all terminals shorted (1 s)
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and storage
temperature range
Maximum thermal resistance,
junction to case per leg
Maximum thermal resistance,
case to heatsink
Approximate weight
to heatsink
busbar
JEDEC
SYMBOL
T
J
, T
Stg
R
thJC
R
thCS
DC operation
Mounting surface, smooth and greased
TEST CONDITIONS
VALUES
- 55 to 175
0.30
°C/W
0.1
110
4
5
4
g
oz.
Nm
TO-240AA
UNITS
°C
Mounting torque ± 10 %
Case style
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2
For technical questions, contact: ind-modules@vishay.com
Document Number: 94451
Revision: 25-Apr-08
VSKDS403/100P
Schottky Rectifier, 200 A
Vishay High Power Products
1000
Reverse Current - I
R
(mA)
10
00
10
0
1
0
T =1 5 C
7°
J
1 0C
5°
1 5C
2°
1 0C
0°
Tj = 175°C
1
.1
.0
1
.0 1
0
0
7°
5C
5°
0C
2°
5C
Instantaneous Forward Current - I
F
(A)
100
2
0
4
0
6
0
8
0
10
0
Reverse Voltage - V
R
(V)
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
10000
Junction Capacitance - C
T
(pF)
10
Tj = 125°C
Tj = 25°C
Tj = 25°C
1
0.0
0.5
1.0
1.5
2.0
1000
0 10 20 30 40 50 60 70 80 90 100
Forward Voltage Drop - V
FM
(V)
Reverse Voltage - V
R
(V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
1
Thermal Impedance Z
thJC
(°C/W)
D = 0.75
D = 0.5
0.1
D = 0.33
D = 0.25
D = 0.2
0.01
Single Pulse
(Thermal Resistance)
0.001
1E-05
1E-04
1E-03
1E-02
1E-01
1E+00
1E+01
t
1
, Rectangular Pulse Duration (Seconds)
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics
Document Number: 94451
Revision: 25-Apr-08
For technical questions, contact: ind-modules@vishay.com
www.vishay.com
3
VSKDS403/100P
Vishay High Power Products
Schottky Rectifier, 200 A
180
Allowable Case Temperature (°C)
Average Power Loss - (Watts)
250
Square wave (D=0.50)
80% rated Vr applied
160
140
120
100
80
60
40
20
0
0
100
200
see note (1)
RMS limit
200
180°
120°
90°
60°
30°
DC
150
DC
100
50
0
300
400
500
600
0
50
100
150
200
250
300
Average Forward Current - I
F
(AV)
(A)
Average Forward Current - I
F
(AV)
(A)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
Fig. 6 - Forward Power Loss Characteristics
Non-Repetitive Surge Current - I
FSM
(A)
100000
At Any Rated Load Condition
And With Rated V
RRM
Applied
Following Surge
10000
1000
10
100
1000
10000
Square Wave Pulse Duration - t
p
(microsec)
Fig. 7 - Maximum Non-Repetitive Surge Current
L
High-speed
switch
Freewheel
diode
40HFL40S02
+
V
d
= 25
V
D.U.T.
IRFP460
R
g
= 25
Ω
Current
monitor
Fig. 8 - Unclamped Inductive Test Circuit
Note
Formula used: T
C
= T
J
- (Pd + Pd
REV
) x R
thJC
;
Pd = Forward power loss = I
F(AV)
x V
FM
at (I
F(AV)
/D) (see fig. 6);
Pd
REV
= Inverse power loss = V
R1
x I
R
(1 - D); I
R
at V
R1
= 80 % rated V
R
(1)
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4
For technical questions, contact: ind-modules@vishay.com
Document Number: 94451
Revision: 25-Apr-08
VSKDS403/100P
Schottky Rectifier, 200 A
Vishay High Power Products
ORDERING INFORMATION TABLE
Device code
VS
1
KD
2
S
3
40
4
3
5
/
100
6
P
7
1
2
3
4
5
6
7
-
-
-
-
-
-
-
Vishay HPP
Circuit configuration:
KD = ADD-A-PAK - 2 diodes in series
S = Schottky diode
Average rating (x 10)
Product silicon identification
Voltage rating (100 = 100 V)
Lead (Pb)-free
CIRCUIT CONFIGURATION
(1)
~
(2)
+
(3)
-
LINKS TO RELATED DOCUMENTS
Dimensions
http://www.vishay.com/doc?95174
Document Number: 94451
Revision: 25-Apr-08
For technical questions, contact: ind-modules@vishay.com
www.vishay.com
5
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