VSK.56..PbF, VSK.71..PbF Series
Vishay Semiconductors
Standard Diodes, 60 A/80 A
(ADD-A-PAK Generation 5 Power Modules)
FEATURES
• High voltage
• Industrial standard package
• Thick copper baseplate
• UL E78996 approved
• 3500 V
RMS
isolating voltage
• Compliant to RoHS directive 2002/95/EC
ADD-A-PAK
• Designed and qualified for industrial level
PRODUCT SUMMARY
I
F(AV)
Type
60 A/80 A
Modules - Diode, High Voltage
BENEFITS
• Up to 1600 V
• Full compatible TO-240AA
• High surge capability
• Easy mounting on heatsink
• Al
2
O
3
DBC insulator
• Heatsink grounded
MECHANICAL DESCRIPTION
The Generation 5 of ADD-A-PAK module combine the
excellent thermal performance obtained by the usage of
direct bonded copper substrate with superior mechanical
ruggedness, thanks to the insertion of a solid copper
baseplate at the bottom side of the device. The Cu
baseplate allow an easier mounting on the majority of
heatsink with increased tolerance of surface roughness and
improve thermal spread.
The Generation 5 of AAP module is manufactured without
hard mold, eliminating any possible direct stress on the
leads.
The electrical terminals are secured against axial pull-out:
they are fixed to the module housing via a click-stop feature
already tested and proved as reliable on other Vishay HPP
modules.
ELECTRICAL DESCRIPTION
These modules are intended for general purpose high
voltage applications such as high voltage regulated power
supplies, lighting circuits, temperature and motor speed
control circuits, UPS and battery charger.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
I
F(AV)
I
F(RMS)
I
FSM
I
2
t
I
2
t
V
RRM
T
J
T
Stg
Range
50 Hz
60 Hz
50 Hz
60 Hz
CHARACTERISTICS
100 °C
VSK.56
60
94
1600
1680
12.89
11.76
128.9
400 to 1600
- 40 to 150
VSK.71
80
126
1790
1870
15.90
14.53
159
kA
2
s
kA
2
s
V
°C
A
UNITS
Document Number: 94358
Revision: 20-May-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
1
VSK.56..PbF, VSK.71..PbF Series
Vishay Semiconductors
Standard Diodes, 60 A/80 A
(ADD-A-PAK Generation 5 Power Modules)
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
VOLTAGE
CODE
04
06
08
VSK.56
VSK.71
10
12
14
16
V
RRM
, MAXIMUM REPETITIVE
PEAK REVERSE VOLTAGE
V
400
600
800
1000
1200
1400
1600
V
RSM
, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
500
700
900
1100
1300
1500
1700
10
I
RRM
MAXIMUM
AT 150 °C
mA
FORWARD CONDUCTION
PARAMETER
Maximum average forward current
at case temperature
Maximum RMS forward current
SYMBOL
I
F(AV)
I
F(RMS)
TEST CONDITIONS
180° conduction, half sine wave
DC at 92 °C case temperature
t = 10 ms
Maximum peak, one-cycle forward,
non-repetitive surge current
I
FSM
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
Maximum I
2
t for fusing
I
2
t
t = 8.3 ms
t = 10 ms
t = 8.3 ms
Maximum I
2
t
for fusing
Low level value of threshold voltage
High level value of threshold voltage
Low level value of forward
slope resistance
High level value of forward
slope resistance
Maximum forward voltage drop
I
2
t
V
F(TO)1
V
F(TO)2
r
f1
r
f2
V
FM
No voltage
reapplied
100 % V
RRM
reapplied
No voltage
reapplied
100 % V
RRM
reapplied
VSK.56
60
100
94
1600
1680
1350
Sinusoidal half wave,
intitial T
J
= T
J
maximum
1420
12.89
11.76
9.12
8.32
128.9
0.96
1.03
2.81
2.48
1.51
VSK.71
80
100
126
1790
1870
1500
1570
15.90
14.53
11.25
10.23
159.0
0.83
0.92
2.68
m
(I >
x I
F(AV)
), T
J
= T
J
maximum
I
FM
=
x I
F(AV)
, T
J
= 25 °C, t
p
= 400 μs square wave
2.40
1.50
V
kA
2
s
V
kA
2
s
A
UNITS
A
°C
t = 0.1 ms to 10 ms, no voltage reapplied
(16.7 % x
x I
F(AV)
< I <
x I
F(AV)
), T
J
= T
J
maximum
(I >
x I
F(AV)
), T
J
= T
J
maximum
(16.7 % x
x I
F(AV)
< I <
x I
F(AV)
), T
J
= T
J
maximum
BLOCKING
PARAMETER
Maximum peak reverse
leakage current
RMS insulation voltage
SYMBOL
I
RRM
V
INS
T
J
= 150 °C
50 Hz, circuit to base, all terminals shorted
TEST CONDITIONS
VSK.56
10
3500 (1 s)
VSK.71
UNITS
mA
V
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2
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 94358
Revision: 20-May-10
VSK.56..PbF, VSK.71..PbF Series
Standard Diodes, 60 A/80 A
Vishay Semiconductors
(ADD-A-PAK Generation 5 Power Modules)
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Junction and storage temperature range
Maximum thermal resistance,
junction to case per junction
Typical thermal resistance,
case to heatsink
to heatsink
Mounting torque ± 10 %
busbar
Approximate weight
Case style
JEDEC
SYMBOL
T
J
, T
Stg
R
thJC
R
thCS
DC operation
Mounting surface flat, smooth and greased
A mounting compound is recommended and the
torque should be rechecked after a period of
3 hours to allow for the spread of the compound.
TEST CONDITIONS
VALUES
VSK.56
VSK.71
UNITS
°C
- 40 to 150
0.5
0.1
5
0.4
K/W
Nm
4
110
4
g
oz.
ADD-A-PAK (TO-240AA)
R
CONDUCTION PER JUNCTION
DEVICES
VSK.56
VSK.71
SINE HALF WAVE CONDUCTION
180°
0.11
0.06
120°
0.13
0.08
90°
0.16
0.11
60°
0.22
0.14
30°
0.32
0.21
180°
0.09
0.06
RECTANGULAR WAVE CONDUCTION
120°
0.14
0.09
90°
0.17
0.11
60°
0.23
0.15
30°
0.32
0.21
UNITS
°C/W
Note
• Table shows the increment of thermal resistance R
thJC
when devices operate at different conduction angles than DC
Document Number: 94358
Revision: 20-May-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
3
VSK.56..PbF, VSK.71..PbF Series
Vishay Semiconductors
Standard Diodes, 60 A/80 A
(ADD-A-PAK Generation 5 Power Modules)
120
150
Maximum Average Forward
Power Loss (W)
Maximum Allowable Case
Tmperature (°C)
140
130
VSK.56.. Series
R
thJC
(DC) = 0.5 K/W
100
80
60
Ø
DC
180°
120°
90°
60°
30°
RMS limit
120
110
100
Conduction angle
Ø
40
20
0
Conduction period
VSK.56.. Series
Per junction
T
J
= 150 °C
0
20
40
60
80
100
30°
90
60°
40
90°
120°
180°
60
70
0
10
20
30
50
Average Forward Current (A)
Fig. 1 - Current Ratings Characteristics
Average Forward Current (A)
Fig. 4 - Foward Power Loss Characteristics
150
1500
Maximum Allowable Case
Temperature (°C)
VSK.56.. Series
R
thJC
(DC) = 0.5 K/W
1400
1300
140
Peak Half Sine Wave
Forward Current (A)
1200
1100
1000
900
800
700
600
500
130
120
110
At any rated load condition and with
rated V
RRM
applied following surge.
Initial T
J
= 150 °C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
Ø
Conduction period
30°
100
90
60°
90°
120°
0
20
40
60
180°
DC
80
100
VSK.56.. Series
Per junction
1
10
100
400
Average Forward Current (A)
Fig. 2 - Current Ratings Characteristics
Number of Equal Amplitude Half
Cycle Current Pulses (N)
Fig. 5 - Maximum Non-Repetitive Surge Current
90
Maximum Average Forward
Power Loss (W)
80
70
60
50
40
30
20
10
0
RMS limit
Peak Half Sine Wave
Forward Current (A)
180°
120°
90°
60°
30°
1600
1400
1200
1000
800
600
400
Maximum non-repetitive surge current
versus pulse train duration.
Initial T
J
= 150 °C
No voltage reapplied
Rated V
RRM
reapplied
Ø
Conduction angle
VSK.56.. Series
Per junction
T
J
= 150 °C
0
10
20
30
40
50
60
70
VSK.56.. Series
Per junction
0.1
1.0
10
200
0.01
Average Forward Current (A)
Fig. 3 - Forward Power Loss Characteristics
Pulse Train Duration (s)
Fig. 6 - Maximum Non-Repetitive Surge Current
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4
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 94358
Revision: 20-May-10
VSK.56..PbF, VSK.71..PbF Series
Standard Diodes, 60 A/80 A
Vishay Semiconductors
(ADD-A-PAK Generation 5 Power Modules)
120
120
100
80
0.7
R
K/
W
Maximum Total Forward
Power Loss (W)
Maximum Total Forward
Power Loss (W)
100
80
60
40
20
0
th
SA
=
1.0
0.
5
K/W
K/
W
180°
(Sine)
DC
1.5
60
40
20
0
-
Δ
R
K/W
K/W
2.0
3.0 K
/W
VSK.56.. Series
Per junction
T
J
= 150 °C
0
20
40
60
80
100
7.0 K/W
0
20
40
60
80
100
120
140
Total RMS Output Current (A)
Fig. 7 - Forward Power Loss Characteristics
Maximum Allowable Ambient
Temperature (°C)
450
450
Maximum Total Power Loss (W)
Maximum Total Power Loss (W)
R
0.2
0.3
400
400
350
300
250
200
150
100
50
0
th
SA
+
350
300
250
200
150
100
50
0
~
-
180°
(Sine)
180°
(Rect)
=
K/
W
0.
1
K/
W
K/W
-
Δ
R
0.5
K
1.0 K
/W
2 x VSK.56.. Series
Single phase bridge
Connected
T
J
= 150 °C
0
20
40
60
80
100
120
140
/W
0
20
40
60
80
100
120
140
Total Output Current (A)
Fig. 8 - Forward Power Loss Characteristics
Maximum Allowable Ambient
Temperature (°C)
450
450
Maximum Total Power Loss (W)
Maximum Total Power Loss (W)
400
+
~
-
120°
(Rect)
400
350
300
250
200
150
100
50
0
R
th
S
350
300
250
200
150
100
50
0
0.3
A
=
K/
W
0.
1
K/
0.4
0.5
W
W
K/W
K/W
K/
-
Δ
R
0.7
3 x VSK.56.. Series
Three phase bridge
Connected
T
J
= 150 °C
0
20
40
60
80
100
120
140
160
W
1.5 K/W
1.0 K
/
3.0 K/W
0
20
40
60
80
100
120
140
Total Output Current (A)
Fig. 9 - Forward Power Loss Characteristics
Maximum Allowable Ambient
Temperature (°C)
Document Number: 94358
Revision: 20-May-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
5
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