VSK.166..PbF, VSK.196..PbF, VSK.236..PbF Series
Vishay Semiconductors
Standard Recovery Diodes, 165 A to 230 A
(INT-A-PAK Power Modules)
FEATURES
• High voltage
• Electrically isolated by DBC ceramic (AI
2
O
3
)
• 3500 V
RMS
isolating voltage
• Industrial standard package
• High surge capability
• Glass passivated chips
• Modules uses high voltage power diodes in four basic
configurations
• Simple mounting
INT-A-PAK
• UL approved file E78996
• Compliant to RoHS directive 2002/95/EC
• Designed and qualified for multiple level
PRODUCT SUMMARY
I
F(AV)
Type
165 A to 230 A
Modules - Diode, High Voltage
APPLICATIONS
• DC motor control and drives
• Battery chargers
• Welders
• Power converters
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
I
F(AV)
I
F(RMS)
I
FSM
I
2
t
I
2
t
V
RRM
T
J
Range
50 Hz
60 Hz
50 Hz
60 Hz
CHARACTERISTICS
VSK.166..
165
T
C
100
260
4000
4200
80
73
798
VSK.196..
195
100
305
4750
4980
113
103
1130
400 to 1600
- 40 to 150
VSK.236..
230
100
360
5500
5765
151
138
1516
kA
2
s
kA
2
s
V
°C
A
UNITS
A
°C
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
VOLTAGE
CODE
04
VSK.166
VSK.196
VSK.236
08
12
14
16
V
RRM
, MAXIMUM REPETITIVE PEAK
REVERSE VOLTAGE
V
400
800
1200
1400
1600
V
RSM
, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
500
900
1300
1500
1700
20
I
RRM
AT 150 °C
mA
Document Number: 94357
Revision: 20-May-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
1
VSK.166..PbF, VSK.196..PbF, VSK.236..PbF Series
Vishay Semiconductors
Standard Recovery Diodes, 165 A to 230 A
(INT-A-PAK Power Modules)
FORWARD CONDUCTION
PARAMETER
Maximum average on-state
current at case temperature
Maximum RMS on-state current
Maximum peak, one-cycle
on-state, non-repetitive
surge current
SYMBOL
I
F(AV)
I
F(RMS)
t = 10 ms
I
FSM
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
Maximum I
2
t for fusing
I
2
t
t = 8.3 ms
t = 10 ms
t = 8.3 ms
Maximum I
2
t
for fusing
Low level value of threshold voltage
High level value of threshold voltage
Low level value on-state
slope resistance
High level value on-state
Maximum forward voltage drop
I
2
t
V
F(TO)1
V
F(TO)2
r
t1
r
t2
V
FM
No voltage
reapplied
100 % V
RRM
reapplied
No voltage
reapplied
100 % V
RRM
reapplied
Sine half wave,
initial T
J
=
T
J
maximum
TEST CONDITIONS
180° conduction, half sine wave
VSK.166 VSK.196 VSK.236
165
100
260
4000
4200
3350
3500
80
73
56
52
798
0.73
0.88
1.5
1.26
1.43
195
100
305
4750
4980
4000
4200
113
103
80
73
1130
0.69
0.78
1.3
1.2
1.38
230
100
360
5500
5765
4630
4850
151
138
107
98
1516
0.7
0.83
1.2
1.07
1.46
V
kA
2
s
V
kA
2
s
A
UNITS
A
°C
t = 0.1 ms to 10 ms, no voltage reapplied
(16.7 % x
x I
F(AV)
< I <
x I
F(AV)
), T
J
maximum
(I >
x I
F(AV)
), T
J
maximum
(16.7 % x
x I
F(AV)
< I <
x I
F(AV)
), T
J
maximum
(I >
x I
F(AV)
), T
J
maximum
I
FM
=
x I
F(AV)
, T
J
= 25 °C, 180° conduction
Average power = V
F(TO)
x I
F(AV)
+ r
f
x (I
F(RMS)
)
2
m
BLOCKING
PARAMETER
Maximum peak reverse and
off-state leakage current
RMS insulation voltage
SYMBOL
I
RRM
V
INS
T
J
= 150 °C
50 Hz, circuit to base, all terminals shorted,
t=1s
TEST CONDITIONS
VSK.166 VSK.196 VSK.236
20
3500
UNITS
mA
V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction operating and
storage temperature range
Maximum thermal resistance,
junction to case per junction
Maximum thermal resistance,
case to heatsink per module
Mounting
torque ± 10 %
Approximate weight
Case style
IAP to heatsink
busbar to IAP
SYMBOL
T
J
, T
Stg
R
thJC
R
thCS
DC operation
Mounting surface smooth, flat and greased
A mounting compound is recommended
and the torque should be rechecked after a
period of 3 hours to allow for the spread of
the compound. Lubricated threads.
0.2
TEST CONDITIONS
VALUES
VSK.166 VSK.196 VSK.236
- 40 to 150
0.16
0.05
4 to 6
200
7.1
INT-A-PAK
Nm
g
oz.
0.14
K/W
UNITS
°C
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2
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 94357
Revision: 20-May-10
VSK.166..PbF, VSK.196..PbF, VSK.236..PbF Series
Standard Recovery Diodes, 165 A to 230 A
Vishay Semiconductors
(INT-A-PAK Power Modules)
R
CONDUCTION PER JUNCTION
DEVICES
180°
VSK.166
VSK.196
VSK.236
0.025
0.016
0.009
SINUSOIDAL CONDUCTION
AT T
J
MAXIMUM
120°
0.03
0.019
0.010
90°
0.038
0.024
0.014
60°
0.055
0.034
0.018
30°
0.089
0.053
0.025
180°
0.018
0.012
0.008
RECTANGULAR CONDUCTION
AT T
J
MAXIMUM
120°
0.031
0.02
0.012
90°
0.041
0.026
0.015
60°
0.057
0.035
0.019
30°
0.089
0.054
0.025
K/W
UNITS
Note
• Table shows the increment of thermal resistance R
thJC
when devices operate at different conduction angles than DC
150
250
Maximum Average Forward
Power Loss (W)
Maximum Allowable Case
Temperature (°C)
140
130
VSK.166.. Series
R
thJC
(DC) = 0.20 K/W
200
Ø
180°
120°
90°
60°
30°
RMS limit
120
110
100
90
80
70
Conduction angle
150
100
Ø
30°
60°
90°
120°
180°
Conduction angle
50
VSK.166.. Series
T
J
= 150 °C
0
40
80
120
160
200
0
0
40
80
120
160
200
Average Forward Current (A)
Fig. 1 - Current Ratings Characteristics
Average Forward Current (A)
Fig. 3 - On-State Power Loss Characteristics
150
300
Maximum Average Forward
Power Loss (W)
Maximum Allowable Case
Temperature (°C)
140
130
120
110
100
90
80
70
VSK.166.. Series
R
thJC
(DC) = 0.20 K/W
250
200
150
Ø
Conduction period
DC
180°
120°
90°
60°
30°
RMS limit
30°
60°
90°
120°
180°
0
50
100
150
200
DC
Ø
100
50
0
Conduction period
VSK.166.. Series
Per junction
T
J
= 150 °C
0
50
100
150
200
250
300
250
300
Average Forward Current (A)
Fig. 2 - Current Ratings Characteristics
Average Forward Current (A)
Fig. 4 - On-State Power Loss Characteristics
Document Number: 94357
Revision: 20-May-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
3
VSK.166..PbF, VSK.196..PbF, VSK.236..PbF Series
Vishay Semiconductors
Standard Recovery Diodes, 165 A to 230 A
(INT-A-PAK Power Modules)
4000
3500
Peak Half Sine Wave
Forward Current (A)
Peak Half Sine Wave
Forward Current (A)
3000
2500
2000
1500
At any rated load condition and with
rated V
RRM
applied following surge.
Initial T
J
= 150 °C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
4000
3500
3000
2500
2000
1500
1000
500
Maximum non-repetitive surge current
versus pulse train duration.
Initial T
J
= 150 °C
No voltage reapplied
Rated V
RRM
reapplied
VSK.166.. Series
1000
VSK.166.. Series
1
10
100
0.01
0.1
1
Number of Equal Amplitude Half
Cycle Current Pulses (N)
Fig. 5 - Maximum Non-Repetitive Surge Current
Pulse Train Duration (s)
Fig. 6 - Maximum Non-Repetitive Surge Current
300
250
200
150
100
50
0
300
250
200
0.7
0.
4
0.
K/
W
R
thS
0.2
3
Maximum Total Forward
Power Loss (W)
Maximum Total Forward
Power Loss (W)
DC
0.5
K/
W
K/
W
A
=0
K/
.12
W
W
K/
150
100
50
0
K/W
R
-
Δ
VSK.166.. Series
Per junction
T
J
= 150 °C
0
50
100
150
200
250
0
25
50
75
100
125
150
Total RMS Output Current (A)
Fig. 7 - On-State Power Loss Characteristics
Maximum Allowable Ambient
Temperature (°C)
1800
1800
Maximum Total Power Loss (W)
1600
1400
1200
1000
800
600
400
200
0
Maximum Total Power Loss (W)
+
~
-
180°
(Sine)
180°
(Rect)
1600
1400
1200
1000
800
600
400
200
0
R
2 x VSK.166.. Series
Single phase bridge
Connected
T
J
= 150 °C
0
100
200
300
400
500
A
=
0.
0.0
12
4K
K/
/W
W
0.0
-
Δ
6K
R
/W
0.1
K/W
0.16
K/W
0.25
K/W
0.5 K/
W
th
S
0
25
50
75
100
125
150
Total Output Current (A)
Fig. 8 - On-State Power Loss Characteristics
Maximum Allowable Ambient
Temperature (°C)
www.vishay.com
4
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 94357
Revision: 20-May-10
VSK.166..PbF, VSK.196..PbF, VSK.236..PbF Series
Standard Recovery Diodes, 165 A to 230 A
Vishay Semiconductors
(INT-A-PAK Power Modules)
1600
1600
Maximum Total Power Loss (W)
Maximum Total Power Loss (W)
R
th
1400
1200
1000
800
600
400
200
0
1400
1200
1000
800
600
400
200
0
04
0.
W
K/
0.
~
-
120°
(Rect)
06
SA
K/
W
=
02
0.
W
K/
0.1
K/W
R
-
Δ
0.1
6K
/W
0.25
3 x VSK.166.. Series
Three phase bridge
Connected
T
J
= 150 °C
0
100
200
300
400
500
K/W
W
0.5 K/
0
25
50
75
100
125
150
Total Output Current (A)
Maximum Allowable Ambient
Temperature (°C)
Fig. 9 - On-State Power Loss Characteristics
150
300
Maximum Average Forward
Power Loss (W)
Maximum Allowable Case
Temperature (°C)
140
130
120
110
100
90
80
70
VSK.196.. Series
R
thJC
(DC) = 0.16 K/W
250
200
150
100
50
0
Ø
180°
120°
90°
60°
30°
RMS limit
Conduction angle
30°
60°
90°
120°
180°
0
50
100
150
200
250
Ø
Conduction angle
VSK.196.. Series
T
J
= 150 °C
0
40
80
120
160
200
Average Forward Current (A)
Fig. 10 - Current Ratings Characteristics
Average Forward Current (A)
Fig. 12 - On-State Power Loss Characteristics
150
350
Maximum Average Forward
Power Loss (W)
Maximum Allowable Case
Temperature (°C)
140
130
VSK.196.. Series
R
thJC
(DC) = 0.16 K/W
300
250
200
150
100
50
0
Ø
120
110
100
90
80
70
Conduction period
DC
180°
120°
90°
60°
30°
RMS limit
30°
60°
90°
120°
180°
DC
0
50
100
150
200
250
300
350
Ø
Conduction period
VSK.196.. Series
Per junction
T
J
= 150 °C
0
50
100
150
200
250
300
350
Average Forward Current (A)
Fig. 11 - Current Ratings Characteristics
Average Forward Current (A)
Fig. 13 - On-State Power Loss Characteristics
Document Number: 94357
Revision: 20-May-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
5
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