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VIT30L60C-E3-4W

产品描述Dual Trench MOS Barrier Schottky Rectifier
文件大小127KB,共5页
制造商Vishay(威世)
官网地址http://www.vishay.com
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VIT30L60C-E3-4W概述

Dual Trench MOS Barrier Schottky Rectifier

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New Product
VT30L60C, VIT30L60C
Vishay General Semiconductor
Dual Trench MOS Barrier Schottky Rectifier
Ultra Low V
F
= 0.32 V at I
F
= 5.0 A
TMBS
TO-220AB
K
®
FEATURES
TO-262AA
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
2
VT30L60C
PIN 1
PIN 3
PIN 2
CASE
3
1
VIT30L60C
PIN 1
PIN 3
2
3
1
TYPICAL APPLICATIONS
For use in high frequency converters, switching power
supplies, freewheeling diodes, OR-ing diode, DC/DC
converters, and reverse battery protection.
PIN 2
K
PRIMARY CHARACTERISTICS
I
F(AV)
V
RRM
I
FSM
V
F
at I
F
= 15 A
T
J
max.
2 x 15 A
60 V
200 A
0.45 V
150 °C
MECHANICAL DATA
Case:
TO-220AB and TO-262AA
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS compliant, and commercial grade
Terminals:
Matte tin plated leads, solderable
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity:
As marked
Mounting Torque:
10 in-lbs maximum
per
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum average forward rectified current
(fig. 1)
per device
per diode
I
F(AV)
I
FSM
dV/dt
T
J
, T
STG
SYMBOL
V
RRM
VT30L60C
60
30
A
15
200
10 000
- 40 to + 150
A
V/μs
°C
VIT30L60C
UNIT
V
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
Voltage rate of change (rated V
R
)
Operating junction and storage temperature range
Document Number: 89380
Revision: 07-Dec-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
1

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