TSM301K12
20V P-Channel MOSFET with Schottky Diode
TDFN 2x2
Pin Definition:
1. Anode
6. Cathode
2. NC
5. Gate
3. Drain
4. Source
PRODUCT SUMMARY
V
DS
(V)
R
DS(on)
(m )
94 @ V
GS
= -4.5V
-20
131 @ V
GS
= -2.5V
185 @ V
GS
= -1.8V
I
D
(A)
-2.8
-2.3
-0.54
SCHOTTKY PRODUCT SUMMARY
V
R
(V)
V
F
(V)
I
F
(A)
20
0.5
2
Features
●
●
●
Configuration with MOSFET and Low Vf SKY
Package low profile 0.75mm (Typ)
Independent Pin Out for Design Flexibility
Block Diagram
Application
●
●
●
●
Load Switch for Portable Applications
DC-DC Buck Circuit
Li-ion Battery Applications
Cellular Charger Switch
P-Channel MOSFET with Schottky Diode
Ordering Information
Part No.
Package
Packing
3Kpcs / 7” Reel
TSM301K12CQ RLG
TDFN 2x2
Note:
“G” denotes for Halogen Free
MOSFET Absolute Maximum Rating
(T
A
=25
o
C unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 1,2)
Pulsed Drain Current
Maximum Power Dissipation
Operating Junction Temperature
Operating Junction and Storage Temperature Range
T
C
=25 C
T
A
=25 C (Note 2)
o
o
Symbol
V
DS
V
GS
I
D
I
DM
P
D
Limit
-20
±12
-4.5
-8
6.5
1.56
+150
- 55 to +150
Unit
V
V
A
A
W
W
o
o
T
J
T
J
, T
STG
C
C
Schottky Absolute Maximum Rating
(T
A
=25
o
C unless otherwise noted)
Parameter
Reverse Voltage
Average Forward Current (Note 1,2)
Pulsed Forward Current
Maximum Power Dissipation (Note 1)
T
C
=25 C
T
A
=25 C (Note 2)
o
o
Symbol
V
R
I
F
I
FM
P
D
Limit
20
2
5
6.8
1.47
Unit
V
A
A
W
W
1/7
Version: B11
TSM301K12
20V P-Channel MOSFET with Schottky Diode
Thermal Resistance Ratings
Parameter
MOSFET
Thermal Resistance-Junction to Ambient
Schottky
Thermal Resistance-Junction to Ambient
T
≤
5s
Steady State
RӨ
JA
85
130
o
Symbol
T
≤
5s
Steady State
RӨ
JA
Limit
80
120
Unit
o
o
C/W
C/W
C/W
o
C/W
Notes:
1. Surface mounted on 1” x 1” (2 oz) FAR4 board,
2. t
≤
5s
MOSFET Electrical Specifications
(Ta = 25
o
C unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Body Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Diode Forward Voltage
Dynamic
b
a
Conditions
V
GS
= 0V, I
D
= -250uA
V
DS
= V
GS
, I
D
= -250µA
V
GS
= ±12V, V
DS
= 0V
V
DS
=-20V, V
GS
= 0V
V
GS
= -4.5V, I
D
= -2.8A
V
GS
= -2.5V, I
D
= -2.3A
V
GS
= -1.8V, I
D
= -0.54A
I
S
= -1.6A, V
GS
= 0V
Symbol
BV
DSS
V
GS(TH)
I
GSS
I
DSS
R
DS(ON)
V
SD
Q
g
Q
gs
Q
gd
C
iss
C
oss
C
rss
t
d(on)
Min
-20
-0.5
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
Typ
--
--
--
--
--
--
--
--
5.2
1.36
0.6
5.2
9.7
19
29
295
170
65
Max
--
--
±100
-1
94
131
185
-1.2
10
--
--
--
--
--
--
--
--
--
Unit
V
V
nA
µA
m
V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching
c
V
DS
= -6V, I
D
= -2.8A,
V
GS
= -5V
VGS=0V, VDS=-6V,
f =1.0MHz
nC
pF
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
VDS=-15V, RD=15 ,
RG=6 , VGS=-10V
t
r
t
d(off)
t
f
nS
Schottky Electrical Specifications
(Ta = 25
o
C unless otherwise noted)
Parameter
Forward Voltage Drop
Maximum Reverse Leakage
Current
Conditions
I
F
= 1A
V
R
= 5V
V
R
= 20V
Symbol
V
F
I
Rm
Min
--
--
--
--
Typ
--
0.015
0.02
60
Max
0.5
0.08
0.10
--
Unit
V
mA
pF
Junction Capacitance
V
R
= 10V
C
T
Notes:
a. pulse test: PW
≤
300µS, duty cycle
≤
2%
b. For DESIGN AID ONLY, not subject to production testing.
c. Switching time is essentially independent of operating temperature.
2/7
Version: B11
TSM301K12
20V P-Channel MOSFET with Schottky Diode
MOSFET Electrical Characteristics Curve
(Ta = 25
o
C, unless otherwise noted)
Output Characteristics
Transfer Characteristics
On-Resistance vs. Drain Current
Gate Charge
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
3/7
Version: B11
TSM301K12
20V P-Channel MOSFET with Schottky Diode
Electrical Characteristics Curve
(Ta = 25
o
C, unless otherwise noted)
On-Resistance vs. Gate-Source Voltage
Threshold Voltage
Single Pulse Power
Normalized Thermal Transient Impedance, Junction-to-Ambient
4/7
Version: B11
TSM301K12
20V P-Channel MOSFET with Schottky Diode
SCHOTTKY Electrical Characteristics Curve
(Ta = 25
o
C, unless otherwise noted)
Typical Forward Current Derating Curve
Typical Instantaneous Forward Characteristics
Typical Reverse Characteristics
Typical Junction Capacitance
Maximum Repetitive Forward Surge Current
5/7
Version: B11
传感器
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
