Preliminary
TSM05N03
30V N-Channel MOSFET
SOT-223
Pin Definition:
1. Gate
2. Drain
3. Source
PRODUCT SUMMARY
V
DS
(V)
R
DS(on)
(m )
60 @ V
GS
=10V
30
90 @ V
GS
=4.5V
I
D
(A)
5
3.8
Features
●
●
Advance Trench Process Technology
High Density Cell Design for Ultra Low On-resistance
Block Diagram
Application
●
●
Load Switch
PA Switch
Ordering Information
Part No.
TSM05N03CW RP
Package
SOT-223
Packing
2.5Kpcs / 13” Reel
N-Channel MOSFET
Absolute Maximum Rating
(Ta = 25
o
C unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Operating Junction Temperature
Operating Junction and Storage Temperature Range
a,b
o
o
Symbol
V
DS
V
GS
I
D
I
DM
I
S
P
D
T
J
T
J
, T
STG
Ta = 25 C
Ta = 75 C
Limit
30
±20
5
±20
1.7
3
Unit
V
V
A
A
A
W
1.1
+150
-55 to +150
o
o
C
C
Thermal Performance
Parameter
Junction to Case Thermal Resistance
Junction to Ambient Thermal Resistance (PCB mounted)
Notes:
a. Pulse width limited by the Maximum junction temperature
2
b. Surface Mounted on a 1 in pad of 2oz Cu, t
≤
5 sec.
Symbol
RӨ
JC
RӨ
JA
Limit
15
45
Unit
o
o
C/W
C/W
1/4
Version: Preliminary
Preliminary
TSM05N03
30V N-Channel MOSFET
Electrical Specifications
(Ta = 25
o
C unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
b
Conditions
V
GS
= 0V, I
D
= 250µA
V
DS
= V
GS
, I
D
= 250µA
V
GS
= ±20V, V
DS
= 0V
V
DS
= 30V, V
GS
= 0V
V
DS
=5V, V
GS
= 10V
V
GS
= 10V, I
D
= 5A
V
GS
= 4.5V, I
D
= 3.8A
V
DS
= 10V, I
D
= 5A
I
S
= 2.5A, V
GS
= 0V
Symbol
BV
DSS
V
GS(TH)
I
GSS
I
DSS
I
D(ON)
R
DS(ON)
g
fs
V
SD
Q
g
Q
gs
Q
gd
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
Min
30
1
--
--
5
--
--
--
--
--
--
--
--
--
--
--
--
--
--
Typ
--
--
--
--
--
46
70
5
--
4.2
1.9
1.35
555
120
60
4.2
19
13
9
Max
--
3
±100
1.0
--
60
90
--
1.2
7
--
--
--
--
--
5.5
25
17
12
Unit
V
V
nA
µA
A
m
S
V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching
b.c
V
DS
= 10V, I
D
= 5A,
V
GS
= 5V
V
DS
= 15V, V
GS
= 0V,
f = 1.0MHz
nC
pF
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
V
DD
= 10V, R
L
= 15 ,
I
D
= 1A, V
GEN
= 10V,
nS
R
G
= 6
Turn-Off Fall Time
t
f
Notes:
a. pulse test: PW
≤300µS,
duty cycle
≤2%
b. For DESIGN AID ONLY, not subject to production testing.
c. Switching time is essentially independent of operating temperature.
2/4
Version: Preliminary
Preliminary
TSM05N03
30V N-Channel MOSFET
SOT-223 Mechanical Drawing
DIM
A
B
C
D
E
F
G
H
I
J
K
SOT-223 DIMENSION
MILLIMETERS
INCHES
MIN
MAX
MIN
MAX
6.350
6.850
0.250
0.270
2.900
3.100
0.114
0.122
3.450
3.750
0.136
0.148
0.595
0.635
0.023
0.025
4.550
4.650
0.179
0.183
2.250
2.350
0.088
0.093
0.835
1.035
0.032
0.041
6.700
7.300
0.263
0.287
0.250
0.355
0.010
0.014
10°
16°
10°
16°
1.550
1.800
0.061
0.071
3/4
Version: Preliminary
Preliminary
TSM05N03
30V N-Channel MOSFET
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,
assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, to
any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of
sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty,
relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose,
merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify TSC for any damages resulting from such improper use or sale.
4/4
Version: Preliminary
微控制器 MCU
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