TSD2150A
Low Vcesat NPN Transistor
SOT-89
Pin Definition:
1. Base
2. Collector
3. Emitter
TO-92
Pin Definition:
1. Emitter
2. Collector
3. Base
PRODUCT SUMMARY
BV
CBO
BV
CEO
I
C
V
CE(SAT)
80V
50V
3A
0.5V @ I
C
/ I
B
= 2A / 200mA
Features
●
●
Low V
CE(SAT)
0.1 @ I
C
/ I
B
= 1A / 50mA (Typ.)
Complementary part with TSB1424A
Ordering Information
Part No.
TSD2150ACY RM
TSD2150ACT B0
TSD2150ACT A3
Package
SOT-89
TO-92
TO-92
Packing
1Kpcs / 7” Reel
1K / Bulk
2K / Ammo
Structure
●
●
Epitaxial Planar Type
NPN Silicon Transistor
Absolute Maximum Rating
(Ta = 25
o
C unless otherwise noted)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
DC
Pulse
SOT-89
TO-92
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
D
T
J
T
STG
Limit
80
50
6
3
6 (note1)
0.6
0.75
+150
- 55 to +150
Unit
V
V
V
A
W
o
o
Operating Junction Temperature
Operating Junction and Storage Temperature Range
Note:
1. Single pulse, Pw=10ms, Duty≤50%
2. When mounted on a 40 x 50 x 0.7mm ceramic board.
C
C
Electrical Specifications
(Ta = 25
o
C unless otherwise noted)
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Conditions
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(SAT)
V
CE(SAT)
V
BE(SAT)
h
FE
1
h
FE
2
h
FE
3
f
T
Cob
Min
80
50
6
--
--
--
--
--
180
200
150
--
--
Typ
--
--
--
--
--
0.1
0.25
--
--
--
--
90
45
Max
--
--
--
0.1
0.1
0.25
0.5
2
--
400
--
--
--
Unit
V
V
V
uA
uA
V
V
I
C
= 50uA, I
E
= 0
I
C
= 1mA, I
B
= 0
I
E
= 50uA, I
C
= 0
V
CB
= 60V, I
E
= 0
V
EB
= 3V, I
C
= 0
I
C
/ I
B
= 1A / 50mA
Collector-Emitter Saturation Voltage
I
C
/ I
B
= 2A / 200mA
Base-Emitter Saturation Voltage
I
C
/ I
B
= 2A / 200mA
V
CE
= 2V, I
C
= 100mA
DC Current Transfer Ratio
V
CE
= 2V, I
C
= 500mA
V
CE
= 2V, I
C
= 1A
V
CE
=5V, I
E
=0.1A,
Transition Frequency
f=100MHz
Output Capacitance
V
CB
= 10V, f=1MHz
Note:
Pulse test: pulse width
≤380uS,
Duty cycle≤2%
MHz
pF
1/5
Version: B11
TSD2150A
Low Vcesat NPN Transistor
Electrical Characteristics Curve
(Ta = 25
o
C, unless otherwise noted)
Figure 1. DC Current Gain
Figure 2. V
CE(SAT)
v.s. Collector Current
Figure 3. V
BE(SAT)
v.s. Collector Current
Figure 4. Power Derating Curve
2/5
Version: B11
TSD2150A
Low Vcesat NPN Transistor
SOT-89 Mechanical Drawing
DIM
A
B
C
D
E
F
G
H
I
J
SOT-89 DIMENSION
MILLIMETERS
INCHES
MIN
MAX
MIN
MAX
4.40
4.60
0.173
0.181
1.50
1.7
0.059
0.070
2.30
2.60
0.090
0.102
0.40
0.52
0.016
0.020
1.50
1.50
0.059
0.059
3.00
3.00
0.118
0.118
0.89
1.20
0.035
0.047
4.05
4.25
0.159
0.167
1.4
1.6
0.055
0.068
0.35
0.44
0.014
0.017
3/5
Version: B11
TSD2150A
Low Vcesat NPN Transistor
TO-92 Mechanical Drawing
DIM
A
B
C
D
E
F
G
H
TO-92 DIMENSION
MILLIMETERS
INCHES
MIN
MAX
MIN
MAX
4.30
4.70
0.169
0.185
4.30
4.70
0.169
0.185
13.53 (typ)
0.532 (typ)
0.39
0.49
0.015
0.019
1.18
1.28
0.046
0.050
3.30
3.70
0.130
0.146
1.27
1.31
0.050
0.051
0.33
0.43
0.013
0.017
4/5
Version: B11
TSD2150A
Low Vcesat NPN Transistor
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,
assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, to
any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of
sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty,
relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose,
merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify TSC for any damages resulting from such improper use or sale.
5/5
Version: B11
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