RU1HE4H
N-Channel Advanced Power MOSFET
MOSFET
Features
• 100V/4A,
R
DS (ON)
=72
mΩ
(Type) @ V
GS
=10V
R
DS (ON)
=80
mΩ
(Type) @ V
GS
=4.5V
• Super High Dense Cell Design
•
Reliable and Rugged
• ESD Protected
Pin Description
SOP-8
• Lead Free and Green Available
Applications
•
Power Management
•
Converters.
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings
(T
A
=25°C Unless Otherwise Noted)
V
DSS
V
GSS
T
J
T
STG
I
S
I
DP
I
D
Drain-Source Voltage
Gate-Source Voltage
Maximum Junction Temperature
Storage Temperature Range
Diode Continuous Forward Current
N-Channel MOSFET
Rating
100
±20
150
-55 to 150
T
C
=25°C
4
①
Unit
V
°C
°C
A
Mounted on Large Heat Sink
300μs Pulse Drain Current Tested
Continuous Drain Current
T
C
=25°C
T
C
=25°C
T
C
=70°C
P
D
R
θJA
②
16
A
A
4
3.3
2.5
1.6
50
Maximum Power Dissipation
Thermal Resistance-Junction to Ambient
T
C
=25°C
T
C
=70°C
W
°C/W
Copyright© Ruichips Semiconductor Co., Ltd
Rev. A– MAR., 2011
www.ruichips.com
RU1HE4H
Electrical Characteristics
Symbol
Static Characteristics
BV
DSS
I
DSS
V
GS(th)
I
GSS
R
DS(ON)
③
(T
A
=25°C Unless Otherwise Noted)
RU1HE4H
Min.
Typ.
Max.
Parameter
Test Condition
Unit
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Threshold Voltage
Gate Leakage Current
Drain-Source On-state Resistance
V
GS
=0V, I
DS
=250µA
V
DS
= 100V, V
GS
=0V
T
J
=85°C
V
DS
=V
GS
, I
DS
=250µA
V
GS
=±20V, V
DS
=0V
V
GS
= 10V, I
DS
=3.5A
V
GS
= 4.5V, I
DS
=2A
100
1
30
1.5
2
2.7
±10
72
80
75
85
V
µA
V
µA
mΩ
mΩ
Diode Characteristics
V
SD
t
rr
Q
rr
③
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
④
I
SD
=3A, V
GS
=0V
I
SD
=3A, dl
SD
/dt=100A/µs
42
73
V
GS
=0V,V
DS
=0V,F=1MHz
V
GS
=0V,
V
DS
= 50V,
Frequency=1.0MHz
1.2
840
70
40
12
V
DD
=50V, R
L
=30Ω,
I
DS
=3A, V
GEN
= 10V,
R
G
=6Ω
39
34
13
1.2
V
ns
nC
Ω
pF
Dynamic Characteristics
R
G
Gate Resistance
C
iss
C
oss
C
rss
t
d(ON)
t
r
t
d(OFF)
t
f
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
④
ns
Gate Charge Characteristics
Q
g
Q
gs
Q
gd
Notes:
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Pulse width limited by safe operating area.
②When
mounted on 1 inch square copper board, t
≤10sec.
Pulse test ; Pulse width≤300µs, duty cycle≤2%.
Guaranteed by design, not subject to production testing.
19
V
DS
=80V, V
GS
= 10V,
I
DS
=3A
4
9
nC
Copyright© Ruichips Semiconductor Co., Ltd
Rev. A– MAR., 2011
2
www.ruichips.com
RU1HE4H
Typical Characteristics
Power Dissipation
Drain Current
T
j
- Junction Temperature (°C)
I
D
- Drain Current (A)
T
j
- Junction Temperature (°C)
P
tot
- Power (W)
Safe Operation Area
Thermal Transient Impedance
V
DS
- Drain-Source Voltage (V)
Normalized Effective Transient
Square Wave Pulse Duration (sec)
3
Copyright© Ruichips Semiconductor Co., Ltd
Rev. A– MAR., 2011
I
D
- Drain Current (A)
www.ruichips.com
RU1HE4H
Typical Characteristics
Output Characteristics
Drain-Source On Resistance
V
DS
- Drain-Source Voltage (V)
R
DS(ON)
- On Resistance (mΩ)
I
D
- Drain Current (A)
I
D
- Drain Current (A)
Drain-Source On Resistance
Gate Threshold Voltage
V
GS
- Gate-Source Voltage (V)
Normalized Threshold Voltage
T
j
- Junction Temperature (°C)
4
Copyright© Ruichips Semiconductor Co., Ltd
Rev. A– MAR., 2011
R
DS(ON)
- On - Resistance (m)
www.ruichips.com
RU1HE4H
Typical Characteristics
Drain-Source On Resistance
Source-Drain Diode Forward
Normalized On Resistance
T
j
- Junction Temperature (°C)
I
S
- Source Current (A)
V
SD
- Source-Drain Voltage (V)
Capacitance
Gate Charge
V
DS
- Drain-Source Voltage (V)
V
GS
- Gate-Source Voltage (V)
C - Capacitance (pF)
Q
G
- Gate Charge (nC)
Copyright© Ruichips Semiconductor Co., Ltd
Rev. A– MAR., 2011
5
www.ruichips.com
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