TRANSISTOR 44 A, 55 V, 0.028 ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, SOT-428, 3 PIN, FET General Purpose Power
| 参数名称 | 属性值 |
| 是否Rohs认证 | 不符合 |
| 厂商名称 | NXP(恩智浦) |
| 零件包装代码 | SC-63 |
| 包装说明 | SMALL OUTLINE, R-PSSO-G2 |
| 针数 | 3 |
| 制造商包装代码 | SOT428 |
| Reach Compliance Code | unknown |
| ECCN代码 | EAR99 |
| 其他特性 | LOGIC LEVEL COMPATIBLE |
| 雪崩能效等级（Eas） | 70 mJ |
| 外壳连接 | DRAIN |
| 配置 | SINGLE WITH BUILT-IN DIODE |
| 最小漏源击穿电压 | 55 V |
| 最大漏极电流 (Abs) (ID) | 44 A |
| 最大漏极电流 (ID) | 44 A |
| 最大漏源导通电阻 | 0.028 Ω |
| FET 技术 | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 代码 | R-PSSO-G2 |
| 元件数量 | 1 |
| 端子数量 | 2 |
| 工作模式 | ENHANCEMENT MODE |
| 最高工作温度 | 175 °C |
| 封装主体材料 | PLASTIC/EPOXY |
| 封装形状 | RECTANGULAR |
| 封装形式 | SMALL OUTLINE |
| 极性/信道类型 | N-CHANNEL |
| 最大功率耗散 (Abs) | 114 W |
| 最大脉冲漏极电流 (IDM) | 176 A |
| 认证状态 | Not Qualified |
| 表面贴装 | YES |
| 端子形式 | GULL WING |
| 端子位置 | SINGLE |
| 晶体管应用 | SWITCHING |
| 晶体管元件材料 | SILICON |
| PHD44N06LT | PHP44N06LT | PHD44N06LT/T3 | PHB44N06LT | PHB44N06LT/T3 | |
|---|---|---|---|---|---|
| 描述 | TRANSISTOR 44 A, 55 V, 0.028 ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, SOT-428, 3 PIN, FET General Purpose Power | TRANSISTOR 44 A, 55 V, 0.028 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, PLASTIC, TO-220AB, 3 PIN, FET General Purpose Power | TRANSISTOR 44 A, 55 V, 0.028 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power | 44A, 55V, 0.028ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, SOT-404, 3 PIN | 44A, 55V, 0.028ohm, N-CHANNEL, Si, POWER, MOSFET |
| 厂商名称 | NXP(恩智浦) | NXP(恩智浦) | NXP(恩智浦) | NXP(恩智浦) | NXP(恩智浦) |
| 包装说明 | SMALL OUTLINE, R-PSSO-G2 | PLASTIC, TO-220AB, 3 PIN | SMALL OUTLINE, R-PSSO-G2 | SMALL OUTLINE, R-PSSO-G2 | SMALL OUTLINE, R-PSSO-G2 |
| Reach Compliance Code | unknown | unknown | unknown | unknown | unknown |
| ECCN代码 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
| 雪崩能效等级（Eas） | 70 mJ | 70 mJ | 70 mJ | 70 mJ | 70 mJ |
| 外壳连接 | DRAIN | DRAIN | DRAIN | DRAIN | DRAIN |
| 配置 | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
| 最小漏源击穿电压 | 55 V | 55 V | 55 V | 55 V | 55 V |
| 最大漏极电流 (ID) | 44 A | 44 A | 44 A | 44 A | 44 A |
| 最大漏源导通电阻 | 0.028 Ω | 0.028 Ω | 0.028 Ω | 0.028 Ω | 0.028 Ω |
| FET 技术 | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 代码 | R-PSSO-G2 | R-PSFM-T3 | R-PSSO-G2 | R-PSSO-G2 | R-PSSO-G2 |
| 元件数量 | 1 | 1 | 1 | 1 | 1 |
| 端子数量 | 2 | 3 | 2 | 2 | 2 |
| 工作模式 | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE |
| 封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | SMALL OUTLINE | FLANGE MOUNT | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE |
| 极性/信道类型 | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL |
| 最大脉冲漏极电流 (IDM) | 176 A | 176 A | 176 A | 176 A | 176 A |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 表面贴装 | YES | NO | YES | YES | YES |
| 端子形式 | GULL WING | THROUGH-HOLE | GULL WING | GULL WING | GULL WING |
| 端子位置 | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
| 晶体管应用 | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING |
| 晶体管元件材料 | SILICON | SILICON | SILICON | SILICON | SILICON |
| 是否Rohs认证 | 不符合 | 不符合 | - | 不符合 | - |
| 零件包装代码 | SC-63 | TO-220AB | - | SOT | - |
| 针数 | 3 | 3 | - | 3 | - |
| 其他特性 | LOGIC LEVEL COMPATIBLE | LOGIC LEVEL COMPATIBLE, FAST SWITCHING | LOGIC LEVEL COMPATIBLE | - | - |
| 最大漏极电流 (Abs) (ID) | 44 A | 44 A | - | 44 A | - |
| 最高工作温度 | 175 °C | 175 °C | - | 175 °C | 175 °C |
| 最大功率耗散 (Abs) | 114 W | 114 W | - | 114 W | - |
| 最大反馈电容 (Crss) | - | 180 pF | - | 180 pF | 180 pF |
| 功耗环境最大值 | - | 114 W | - | 114 W | 114 W |
| 最大关闭时间（toff） | - | 180 ns | - | 180 ns | 180 ns |
| 最大开启时间（吨） | - | 157 ns | - | 157 ns | 157 ns |
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