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TS50P06GC2

产品描述Bridge Rectifier Diode, 50A, 800V V(RRM),
产品类别分立半导体    二极管   
文件大小214KB,共4页
制造商Taiwan Semiconductor
官网地址http://www.taiwansemi.com/
标准
下载文档 详细参数 全文预览

TS50P06GC2概述

Bridge Rectifier Diode, 50A, 800V V(RRM),

TS50P06GC2规格参数

参数名称属性值
是否Rohs认证符合
厂商名称Taiwan Semiconductor
Reach Compliance Codecompliant
ECCN代码EAR99
其他特性UL RECOGNIZED
最小击穿电压800 V
配置BRIDGE, 4 ELEMENTS
二极管元件材料SILICON
二极管类型BRIDGE RECTIFIER DIODE
最大正向电压 (VF)1.1 V
JESD-30 代码R-PSFM-T4
最大非重复峰值正向电流400 A
元件数量4
相数1
端子数量4
最高工作温度150 °C
最低工作温度-55 °C
最大输出电流50 A
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式FLANGE MOUNT
参考标准AEC-Q101; IEC-61000-4-2
最大重复峰值反向电压800 V
表面贴装NO
端子形式THROUGH-HOLE
端子位置SINGLE

文档预览

下载PDF文档
TS50P05G thru TS50P07G
Taiwan Semiconductor
CREAT BY ART
FEATURES
- Glass passivated junction
- Ideal for printed circuit board
- Typical IR less than 0.1μA
- High surge current capability
- ESD capability PASS AEC-Q101 level H3B
- ESD capability PASS IEC6100-4-2 level 4
- UL Recognized File # E-326243
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
Glass Passivated Bridge Rectifiers
TS-6P
MECHANICAL DATA
Case:
TS-6P
Molding compound, UL flammability classification rating 94V-0
Base P/N with suffix "G" on packing code - halogen-free
Terminal:
Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test
Polarity:
Polarity as marked on the body
Mounting torque:
8.17 in-lbs maximum
Weight:
7.15 g (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
=25℃ unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
Rating for fusing (t<8.3ms)
Maximum instantaneous forward voltage (Note 1)
@ 25 A
Maximum DC reverse current
at rated DC blocking voltage
Typical thermal resistance (Note 2)
Operating junction temperature range
Storage temperature range
Note 1: Pulse test with PW=300μs, 1% duty cycle
Note 2: Mount on Heatsink size of 4" x 6" x 0.25" Al-Plate
T
J
=25
T
J
=125℃
SYMBOL
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
I
2
t
V
F
I
R
R
θJC
T
J
T
STG
TS50P05G
600
420
600
TS50P06G
800
560
800
50
400
664
1.1
10
500
3.7
- 55 to +150
- 55 to +150
O
TS50P07G
1000
700
1000
UNIT
V
V
V
A
A
A
2
s
V
μA
C/W
O
O
C
C
Document Number: DS_D1312012
Version: C13

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