RU80N15
N-Channel Advanced Power MOSFET
Features
Pin Description
·
150V/80A
R
DS
(ON)
=31mΩ(Typ.) @ V
GS
=10V
·
Avalanche Rated
·
Reliable and Rugged
·
Lead Free and Green Devices Available
Applications
TO-220
TO-220F
TO-263
TO-247
·
Automotive applications and a wide
variety of other applications
·
High Efficiency Synchronous in SMPS
·
High Speed Power Switching
Absolute Maximum Ratings
Symbol
Parameter
N-Channel MOSFET
Rating
Unit
Common Ratings
(T
A
=25°C Unless Otherwise Noted)
V
DSS
V
GSS
T
J
T
STG
Drain-Source Voltage
Gate-Source Voltage
Maximum Junction Temperature
Storage Temperature Range
Diode Continuous Forward Current
T
C
=25°C
150
±25
175
-55 to 175
80
①
V
°C
°C
A
I
S
Mounted on Large Heat Sink
I
DP
I
D
P
D
R
θJC
R
θJA
300µs Pulsed Drain Current Tested
Continue Drain Current
Maximum Power Dissipation
Thermal Resistance -Junction to Case
Thermal Resistance-Junction to Ambient
T
C
=
25
°C
T
C
=25°C
T
C
=100°C
T
C
=25°C
T
C
=100°C
300
80
60
②
A
400
220
0.45
62.5
W
°C/W
Drain-Source Avalanche Ratings
E
AS
Avalanche Energy ,Single Pulsed
Storage Temperature Range
1000
mJ
-55 to 150
Copyright© Ruichips Semiconductor Co., Ltd
Rev. C – JAN., 2010
www.ruichips.com
RU80N15
Electrical Characteristics
Symbol
Static Characteristics
BV
DSS
I
DSS
V
GS(th)
I
GSS
R
DS(ON)
③
(T
A
=25°C Unless Otherwise Noted)
RU80N15
Parameter
Test Condition
Min.
Typ.
Max.
Unit
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Threshold Voltage
Gate Leakage Current
Drain-Source On-state Resistance
V
GS
=0V, I
DS
=250µA
V
DS
= 150V, V
GS
=0V
T
J
=85°C
V
DS
=V
GS
, I
DS
=250µA
V
GS
=±25V, V
DS
=0V
V
GS
= 10V, I
DS
=40A
150
1
30
2
3
4
±100
31
33
V
µA
V
nA
mΩ
Diode Characteristics
V
SD
t
rr
q
rr
③
Diode Forward Voltage
Reverse Recovery Time
I
SD
=40 A, V
GS
=0V
I
SD
=40A, dl
SD
/dt=100A/µs
0.8
68
130
1.3
V
ns
nC
Reverse Recovery Charge
④
Dynamic Characteristics
R
G
C
iss
C
oss
C
rss
t
d(ON)
t
r
t
d(OFF)
t
f
Gate Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
④
V
GS
=0V,V
DS
=0V,F=1MHz
V
GS
=0V,
V
DS
= 30V,
Frequency=1.0MHz
1.0
3800
550
250
18
30
50
Ω
pF
V
DD
=35V, R
L
=35Ω,
I
DS
= 1A, V
GEN
= 10V,
R
G
=10Ω
32
80
56
ns
150
120
Gate Charge Characteristics
Q
g
Q
gs
Q
gd
Notes:
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
①Pulse
width limited by safe operating area.
②Current
limited by package( Limitation Current is 75A )
③Pulse
test ; Pulse width≤300
µ
s, duty cycle≤2%.
④Guaranteed
by design, not subject to production testing.
90
V
DS
=30V, V
GS
= 10V,
I
DS
=40A
25
30
220
nC
Copyright© Ruichips Semiconductor Co., Ltd
Rev. C – JAN., 2010
2
www.ruichips.com
RU80N15
Typical Characteristics
Power Dissipation
Drain Current
I
D
- Drain Current (A)
Tj - Junction Temperature (°C)
T
j
- Junction Temperature (°C)
Safe Operation Area
Thermal Transient Impedance
V
DS
- Drain-Source Voltage (V)
Ptot - Power (W)
Normalized Effective Transient
Square Wave Pulse Duration (sec)
3
Copyright© Ruichips Semiconductor Co., Ltd
Rev. C – JAN., 2010
I
D
- Drain Current (A)
www.ruichips.com
RU80N15
Typical Characteristics
Output Characteristics
Drain-Source On Resistance
V
DS
- Drain-Source Voltage (V)
R
DS(ON)
- On Resistance (mΩ)
I
D
- Drain Current (A)
I
D
- Drain Current (A)
Drain-Source On Resistance
Gate Threshold Voltage
RDS(ON) - On - Resistance (m
Ω
)
VGS - Gate - Source Voltage (V)
Normalized Threshold Vlotage
Tj - Junction Temperature (°C)
Copyright© Ruichips Semiconductor Co., Ltd
Rev. C – JAN., 2010
4
www.ruichips.com
RU80N15
Typical Characteristics
Drain-Source On Resistance
Source-Drain Diode Forward
Normalized On Resistance
R
ON
@T=25ºC:31mΩ
T
j
- Junction Temperature (°C)
I
S
- Source Current (A)
V
SD
- Source-Drain Voltage (V)
Capacitance
Gate Charge
V
DS
- Drain-Source Voltage (V)
V
GS
- Gate-Source Voltage (V)
C - Capacitance (pF)
Q
G
- Gate Charge (nC)
Copyright© Ruichips Semiconductor Co., Ltd
Rev. C – JAN., 2010
5
www.ruichips.com
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