RU8099
N-Channel Advanced Power MOSFET
Features
•
90V/90A
Pin Description
R
DS
(ON)
=8mΩ(Typ.) @ V
GS
=10V
•
Ultra Low On-Resistance
•
Extremely high dv/dt capability
•
Fast Switching and Fully Avalanche Rated
•
100% avalanche tested
TO-220
TO-220F
TO-247
TO-263
Applications
·
High efficiency switching mode
power supply
N-Channel MOSFET
Rating
Unit
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings
(T
A
=25°C Unless Otherwise Noted)
V
DSS
V
GSS
T
J
T
STG
Drain-Source Voltage
Gate-Source Voltage
Maximum Junction Temperature
Storage Temperature Range
Diode Continuous Forward Current
T
C
=25°C
90
±25
175
-55 to 175
90
①
V
°C
°C
A
I
S
Mounted on Large Heat Sink
I
DP
I
D
P
D
R
θJC
R
θJA
300µs Pulsed Drain Current Tested
Continue Drain Current
Maximum Power Dissipation
Thermal Resistance -Junction to Case
Thermal Resistance-Junction to Ambient
T
C
=25°C
T
C
=25°C
T
C
=100°C
T
C
=25°C
T
C
=100°C
360
90
65
86
0.86
62.5
①
A
175
W
°C/W
Drain-Source Avalanche Ratings
②
Avalanche Energy ,Single Pulsed
E
AS
Storage Temperature Range
1306
mJ
-55 to 150
Copyright© Ruichips Semiconductor Co., Ltd
Rev.A –SEP., 2010
www.ruichips.com
RU8099
Electrical Characteristics
Symbol
Static Characteristics
BV
DSS
I
DSS
V
GS(th)
I
GSS
R
DS(ON)
③
(T
A
=25°C Unless Otherwise Noted)
RU8099
Parameter
Test Condition
Min.
Typ.
Max.
Unit
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Threshold Voltage
Gate Leakage Current
Drain-Source On-state Resistance
V
GS
=0V, I
DS
=250µA
V
DS
= 90V, V
GS
=0V
T
J
=85°C
V
DS
=V
GS
,
I
DS
=250µA
V
GS
=±25V, V
DS
=0V
V
GS
= 10V, I
DS
=40A
90
1
30
2
3
4
±100
8
10
V
µA
V
nA
mΩ
Diode Characteristics
V
SD
t
rr
q
rr
③
Diode Forward Voltage
Reverse Recovery Time
I
SD
=40 A, V
GS
=0V
90
I
SD
=40A, dl
SD
/dt=100A/µs
200
1.2
V
ns
nC
Reverse Recovery Charge
④
Dynamic Characteristics
R
G
C
iss
C
oss
C
rss
t
d(ON)
t
r
t
d(OFF)
t
f
Gate Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
④
V
GS
=0V,V
DS
=0V,F=1MHz
V
GS
=0V,
V
DS
= 25V,
Frequency=1.0MHz
1.5
2550
810
210
25
Ω
pF
V
DD
=40V,I
DS
= 40A, V
GEN
=
10V,R
G
=2.5Ω
205
ns
150
130
Gate Charge Characteristics
Q
g
Q
gs
Q
gd
Notes:
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
①Current
limited by package.
②
I
AS
=75A, V
DD
= 50V, R
G
= 47Ω , Starting T
J
= 25°C
③Pulse
test ; Pulse width≤400
µ
s, duty cycle≤2%.
④Guaranteed
by design, not subject to production testing.
85
V
DS
=72V, V
GS
= 10V,
I
DS
=80A
19
30
120
nC
Copyright© Ruichips Semiconductor Co., Ltd
Rev. A –SEP., 2010
2
www.ruichips.com
RU8099
Typical Characteristics
Power Dissipation
Drain Current
I
D
- Drain Current (A)
Tj - Junction Temperature (°C)
T
j
- Junction Temperature (°C)
Safe Operation Area
Thermal Transient Impedance
V
DS
- Drain-Source Voltage (V)
Ptot-Power(W)
Normalized Effective Transient
Square Wave Pulse Duration (sec)
3
Copyright© Ruichips Semiconductor Co., Ltd
Rev. A –SEP., 2010
I
D
- Drain Current (A)
www.ruichips.com
RU8099
Typical Characteristics
Output Characteristics
Drain-Source On Resistance
V
DS
- Drain-Source Voltage (V)
R
DS(ON)
- On Resistance (mΩ)
I
D
- Drain Current (A)
I
D
- Drain Current (A)
Drain-Source On Resistance
Normalized Gate Threshold Voltage
VGS - Gate - Source Voltage (V)
Normalized Gate-Source Voltage (V)
RDS(ON) - On - Resistance (mΩ)
Tj - Junction Temperature (°C)
Copyright© Ruichips Semiconductor Co., Ltd
Rev. A –SEP., 2010
4
www.ruichips.com
RU8099
Typical Characteristics
Drain-Source On Resistance
Source-Drain Diode Forward
Normalized On Resistance
T
j
- Junction Temperature (°C)
I
S
- Source Current (A)
V
SD
- Source-Drain Voltage (V)
Capacitance
Gate Charge
V
DS
- Drain-Source Voltage (V)
V
GS
- Gate-Source Voltage (V)
C - Capacitance (pF)
Q
G
- Gate Charge (nC)
Copyright© Ruichips Semiconductor Co., Ltd
Rev. A –SEP., 2010
5
www.ruichips.com
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