RU60200R
N-Channel Advanced Power MOSFET
MOSFET
Features
• 60V/230A,
R
DS (ON)
=2.5
mΩ
(Type) V
GS
=10V
I
DS
=80A
•
Ultra Low On-Resistance
•
Exceptional dv/dt capability
•
Fast Switching and Fully Avalanche Rated
•
100% avalanche tested
•
175°C Operating Temperature
• Lead Free and Green Available
Pin Description
TO-220
TO-220F
TO-263
TO-247
Applications
•
Switching Application Systems
•
Inverter Systems
N-Channel MOSFET
Absolute Maximum Ratings
Symbol
Parameter
Rating
60
±25
175
-55 to 175
T
C
=25°C
230
①
Unit
Common Ratings
(T
A
=25°C Unless Otherwise Noted)
V
DSS
V
GSS
T
J
T
STG
I
S
Drain-Source Voltage
Gate-Source Voltage
Maximum Junction Temperature
Storage Temperature Range
Diode Continuous Forward Current
V
°C
°C
A
Mounted on Large Heat Sink
I
DP
I
D
300μs Pulse Drain Current Tested
Continuous Drain Current
T
C
=25°C
T
C
=25°C
T
C
=100°C
P
D
R
θJC
②
900
230
180
①
A
A
Maximum Power Dissipation
Thermal Resistance-Junction to Case
T
C
=25°C
T
C
=100°C
330
167
0.45
W
°C/W
Drain-Source Avalanche Ratings
E
AS
Avalanche Energy, Single Pulsed
1400
mJ
Copyright© Ruichips Semiconductor Co., Ltd
Rev. A– NOV., 2010
www.ruichips.com
RU60200R
Electrical Characteristics
Symbol
Static Characteristics
BV
DSS
I
DSS
V
GS(th)
I
GSS
R
DS(ON)
③
(T
A
=25°C Unless Otherwise Noted)
RU60200R
Min.
Typ.
Max.
Parameter
Test Condition
Unit
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Threshold Voltage
Gate Leakage Current
Drain-Source On-state Resistance
V
GS
=0V, I
DS
=250µA
V
DS
= 60V, V
GS
=0V
T
J
=85°C
V
DS
=V
GS
, I
DS
=250µA
V
GS
=±25V, V
DS
=0V
V
GS
= 10V, I
DS
=80A
60
1
30
2
3
4
±100
2.5
3.5
V
µA
V
nA
mΩ
Diode Characteristics
V
SD
t
rr
Q
rr
③
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
④
I
SD
=80A, V
GS
=0V
I
SD
=80A, dl
SD
/dt=100A/µs
89
175
V
GS
=0V,V
DS
=0V,F=1MHz
V
GS
=0V,
V
DS
= 30V,
Frequency=1.0MHz
1.1
6500
940
650
29
V
DD
=30V, R
L
=30Ω,
I
DS
= 80A, V
GEN
= 10V,
R
G
=8Ω
38
80
125
1.2
V
ns
nC
Ω
pF
Dynamic Characteristics
R
G
Gate Resistance
C
iss
C
oss
C
rss
t
d(ON)
t
r
t
d(OFF)
t
f
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
④
ns
Gate Charge Characteristics
Q
g
Q
gs
Q
gd
Total Gate Charge
158
V
DS
=48V, V
GS
= 10V,
I
DS
=80A
35
52
208
nC
Gate-Source Charge
Gate-Drain Charge
Notes:
①Calculated
continuous current based on maximum allowable junction temperature. Package limitation
current is 75A.
②Limited
by T
Jmax
, I
AS
=80A, V
DD
= 48V, R
G
= 47Ω , Starting T
J
= 25°C.
③Pulse
test ; Pulse width≤300
µ
s, duty cycle≤2%.
④Guaranteed
by design, not subject to production testing.
Copyright© Ruichips Semiconductor Co., Ltd
Rev. A– NOV., 2010
2
www.ruichips.com
RU60200R
Typical Characteristics
Power Dissipation
Drain Current
T
j
- Junction Temperature (°C)
I
D
- Drain Current (A)
T
j
- Junction Temperature (°C)
Safe Operation Area
P
tot
- Power (W)
Thermal Transient Impedance
V
DS
- Drain-Source Voltage (V)
Copyright© Ruichips Semiconductor Co., Ltd
Rev. A– NOV., 2010
3
Normalized Effective Transient
Square Wave Pulse Duration (sec)
www.ruichips.com
I
D
- Drain Current (A)
RU60200R
Typical Characteristics
Output Characteristics
Drain-Source On Resistance
V
DS
- Drain-Source Voltage (V)
R
DS(ON)
- On Resistance (mΩ)
I
D
- Drain Current (A)
I
D
- Drain Current (A)
Drain-Source On Resistance
Gate Threshold Voltage
V
GS
- Gate-Source Voltage (V)
Copyright© Ruichips Semiconductor Co., Ltd
Rev. A– NOV., 2010
4
Normalized Threshold Voltage
T
j
- Junction Temperature (°C)
www.ruichips.com
R
DS(ON)
- On - Resistance (m)
RU60200R
Typical Characteristics
Drain-Source On Resistance
Source-Drain Diode Forward
Normalized On Resistance
T
j
- Junction Temperature (°C)
I
S
- Source Current (A)
V
SD
- Source-Drain Voltage (V)
Capacitance
Gate Charge
V
DS
- Drain-Source Voltage (V)
Copyright© Ruichips Semiconductor Co., Ltd
Rev. A– NOV., 2010
5
V
GS
- Gate-Source Voltage (V)
C - Capacitance (pF)
Q
G
- Gate Charge (nC)
www.ruichips.com
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