RU3582S
N-Channel Advanced Power MOSFET
MOSFET
Features
• 40V/100A,
R
DS (ON)
=5
mΩ
(Type) @ V
GS
=10V,
I
DS
=40A
•
Ultra Low On-Resistance
•
Fast Switching
•
100% avalanche tested
•
175°C Operating Temperature
• Lead Free,RoHS compliant
Pin Description
TO-220
TO-220F
TO-263
TO-247
Applications
•
Switching Application Systems
•
UPS
N-Channel MOSFET
Absolute Maximum Ratings
Symbol
Parameter
Rating
40
±20
175
-55 to 175
T
C
=25°C
100
①
②
Unit
Common Ratings
(T
A
=25°C Unless Otherwise Noted)
V
DSS
V
GSS
T
J
T
STG
I
S
I
DP
I
D
Drain-Source Voltage
Gate-Source Voltage
Maximum Junction Temperature
Storage Temperature Range
Diode Continuous Forward Current
V
°C
°C
A
Mounted on Large Heat Sink
300μs Pulse Drain Current Tested
Continuous Drain Current
T
C
=25°C
T
C
=25°C
T
C
=100°C
P
D
R
θJC
③
400
A
A
100
Maximum Power Dissipation
Thermal Resistance-Junction to Case
T
C
=25°C
T
C
=100°C
73
107
53
1.4
②
W
°C/W
Drain-Source Avalanche Ratings
E
AS
Avalanche Energy, Single Pulsed
576
mJ
Copyright© Ruichips Semiconductor Co., Ltd
Rev. B– MAR., 2011
www.ruichips.com
RU3582S
Electrical Characteristics
Symbol
Static Characteristics
BV
DSS
I
DSS
V
GS(th)
I
GSS
R
DS(ON)
④
(T
A
=25°C Unless Otherwise Noted)
RU3582S
Min.
Typ.
Max.
Parameter
Test Condition
Unit
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Threshold Voltage
Gate Leakage Current
Drain-Source On-state Resistance
V
GS
=0V, I
DS
=250µA
V
DS
= 40V, V
GS
=0V
T
J
=85°C
V
DS
=V
GS
, I
DS
=250µA
V
GS
=±20V, V
DS
=0V
V
GS
= 10V, I
DS
=40A
40
1
30
2
3
4
±100
5
6.5
V
µA
V
nA
mΩ
Diode Characteristics
V
SD
t
rr
Q
rr
④
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
⑤
I
SD
=40 A, V
GS
=0V
I
SD
=40A, dl
SD
/dt=100A/µs
24
18
V
GS
=0V,V
DS
=0V,F=1MHz
V
GS
=0V,
V
DS
= 32V,
Frequency=1.0MHz
1.8
2110
480
260
15
V
DD
=20V, R
L
=35Ω,
I
DS
=40A, V
GEN
= 10V,
R
G
=4Ω
95
33
28
1.2
V
ns
nC
Ω
pF
Dynamic Characteristics
R
G
Gate Resistance
C
iss
C
oss
C
rss
t
d(ON)
t
r
t
d(OFF)
t
f
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
⑤
ns
Gate Charge Characteristics
Q
g
Q
gs
Q
gd
Notes:
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DS
=32V, V
GS
= 10V,
I
DS
=40A
95
17
38
120
nC
Pulse width limited by safe operating area.
Calculated continuous current based on maximum allowable junction temperature. Current limited by
bond wire. Package limitation current is 75A.
Limited by T
Jmax
, I
AS
=48A, V
DD
= 48V, R
G
= 47Ω , Starting T
J
= 25°C.
Pulse test ; Pulse width≤300µs, duty cycle≤2%.
Guaranteed by design, not subject to production testing.
Copyright© Ruichips Semiconductor Co., Ltd
Rev. B– MAR., 2011
2
www.ruichips.com
RU3582S
Typical Characteristics
Power Dissipation
Drain Current
T
j
- Junction Temperature (°C)
I
D
- Drain Current (A)
T
j
- Junction Temperature (°C)
Safe Operation Area
P
tot
- Power (W)
Thermal Transient Impedance
V
DS
- Drain-Source Voltage (V)
Copyright© Ruichips Semiconductor Co., Ltd
Rev. B– MAR., 2011
3
Normalized Effective Transient
Square Wave Pulse Duration (sec)
I
D
- Drain Current (A)
www.ruichips.com
RU3582S
Typical Characteristics
Output Characteristics
Drain-Source On Resistance
V
DS
- Drain-Source Voltage (V)
R
DS(ON)
- On Resistance (mΩ)
I
D
- Drain Current (A)
I
D
- Drain Current (A)
Drain-Source On Resistance
Gate Threshold Voltage
V
GS
- Gate-Source Voltage (V)
Normalized Threshold Voltage
T
j
- Junction Temperature (°C)
4
Copyright© Ruichips Semiconductor Co., Ltd
Rev. B– MAR., 2011
R
DS(ON)
- On - Resistance (m)
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RU3582S
Typical Characteristics
Drain-Source On Resistance
Source-Drain Diode Forward
Normalized On Resistance
T
j
- Junction Temperature (°C)
I
S
- Source Current (A)
V
SD
- Source-Drain Voltage (V)
Capacitance
Gate Charge
V
DS
- Drain-Source Voltage (V)
Copyright© Ruichips Semiconductor Co., Ltd
Rev. B– MAR., 2011
5
V
GS
- Gate-Source Voltage (V)
C - Capacitance (pF)
Q
G
- Gate Charge (nC)
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