MMSTA92
TRANSISTOR(PNP)
FEATURES
Small Surface Mount Package
Complementary to MMSTA42
Ideal for Medium Power Amplification and Switching
MARKING:K3R
MAXIMUM RATINGS (T
a
=25℃ unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
R
ΘJA
T
j
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
-310
-305
-5
-300
200
625
150
-55½+150
Unit
V
V
V
mA
mW
℃/W
℃
℃
1. BASE
2. EMITTER
3. COLLECTOR
SOT–323
ELECTRICAL CHARACTERISTICS (T
a
=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
CEO
I
EBO
Test
I
C
=-1mA, I
B
=0
I
E
=-100µA, I
C
=0
V
CB
=-200V, I
E
=0
V
CE
=-200V, I
B
=0
V
CE
=-300V, I
B
=0
V
EB
=-5V, I
C
=0
V
CE
=-10V, I
C
=-1mA
DC current gain
h
FE
V
CE
=-10V, I
C
=-10mA
V
CE
=-10V, I
C
=-30mA
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
V
CE(sat)
V
BE(sat)
f
T
C
ob
I
C
=-20mA, I
B
=-2mA
I
C
=-20mA, I
B
=-2mA
V
CE
=-20V,I
E
=-10mA , f=30MHz
V
CB
=-20V, I
E
=0, f=1MHz
50
6
60
100
60
-0.2
-0.9
V
V
MHz
pF
200
conditions
Min
-310
-305
-5
-250
-250
-5
-100
Typ
Max
Unit
V
V
V
nA
nA
µA
nA
I
C
=-100µA, I
E
=0
１
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semiconductor
www.htsemi.com
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