MMST5401
TRANSISTOR(PNP)
FEATURES
Complementary to MMST5551
Small Surface Mount Package
Ideal for Medium Power Amplificationand Switching
MARKING:K4M
1. BASE
SOT–323
MAXIMUM RATINGS (T
a
=25℃ unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
R
ΘJA
T
j
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
-160
-150
-5
-600
200
625
150
-55½+150
Unit
V
V
V
mA
mW
℃/W
℃
℃
2. EMITTER
3. COLLECTOR
ELECTRICAL CHARACTERISTICS (T
a
=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
Test
I
C
=-1mA, I
B
=0
I
E
=-10µA, I
C
=0
V
CB
=-120V, I
E
=0
V
EB
=-3V, I
C
=0
V
CE
=-5V, I
C
=-1mA
DC current gain
h
FE
V
CE
=-5V, I
C
=-10mA
V
CE
=-5V, I
C
=-50mA
Collector-emitter saturation voltage
V
CE(sat)
I
C
=-50mA, I
B
=-5mA
I
C
=-10mA, I
B
=-1mA
I
C
=-50mA, I
B
=-5mA
I
C
=-10mA, I
B
=-1mA
V
CE
=-10V,I
C
=-10mA , f=100MHz
V
CB
=-10V, I
E
=0, f=1MHz
100
6
50
60
50
-0.5
-0.2
-1
-1
V
V
V
V
MHz
pF
300
conditions
Min
-160
-150
-5
-50
-50
Typ
Max
Unit
V
V
V
nA
nA
I
C
=-100µA, I
E
=0
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
V
BE(sat)
f
T
C
ob
１
JinYu
semiconductor
www.htsemi.com
Ｄ½½½：２０１１／０５
stm32/stm8
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