MMST3906
TRANSISTOR(PNP)
FEATURES
Complementary to MMST3904
MARKING:K5N
MAXIMUM RATINGS (T
a
=25℃ unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
R
ΘJA
T
j
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
-40
-40
-5
-200
200
625
150
-55½+150
Unit
V
V
V
mA
mW
℃/W
℃
℃
1. BASE
2. EMITTER
3. COLLECTOR
SOT–323
ELECTRICAL CHARACTERISTICS (T
a
=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Base cut-off current
Collector cut-off current
Symbol
V
(BR)CBO
*
V
(BR)CEO
*
V
(BR)EBO
*
I
BL
*
I
CEX
*
Test
I
C
=-10µA, I
E
=0
I
C
=-1mA, I
B
=0
I
E
=-10µA, I
C
=0
V
CE
=-30V, V
EB(Off)
=-3V
V
CE
=-30V, V
EB(Off)
=-3V
V
CE
=-1V, I
C
=-100µA
DC current gain
h
FE
*
V
CE
=-1V, I
C
=-1mA
V
CE
=-1V, I
C
=-10mA
Collector-emitter saturation voltage
V
CE(sat)
*
I
C
=-10mA, I
B
=-1mA
I
C
=-50mA, I
B
=-5mA
I
C
=-10mA, I
B
=-1mA
I
C
=-50mA, I
B
=-5mA
V
CE
=-20V,I
C
=-10mA , f=100MHz
V
CB
=-5V, I
E
=0, f=1MHz
V
EB
=-0.5V, I
E
=0, f=1MHz
V
CC
=-3V, V
BE(off)
=-0.5V, I
C
=-10mA,
I
B1
=-1mA
V
CC
=3V, I
C
=-10mA, I
B1
= I
B2
=-1mA
250
4.5
10
35
35
225
75
-0.65
60
80
100
300
-0.2
-0.3
-0.85
-0.95
V
V
V
V
MHz
pF
pF
ns
ns
ns
ns
conditions
Min
-40
-40
-5
-50
-50
Typ
Max
Unit
V
V
V
nA
nA
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Collector output capacitance
Delay time
Rise time
Storage time
Fall time
V
BE(sat)
*
f
T
C
ob
C
ib
t
d
t
r
t
s
t
f
*Pulse test: pulse width ≤300μs, duty cycle≤ 2.0%.
１
JinYu
semiconductor
www.htsemi.com
Ｄ½½½：２０１１／０５
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