MMBTA42
TRANSISTOR(NPN)
FEATURES
High breakdown voltage
Low collector-emitter saturation voltage
Complementary to MMBTA92 (PNP)
Marking: 1D
MAXIMUM RATINGS (T
A
=25
℃
unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
R
ӨJA
T
J
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power dissipation
Thermal Resistance, junction to Ambient
Junction Temperature
Storage Temperature
SOT-23
1. BASE
2. EMITTER
3. COLLECTOR
Value
300
300
5
0.3
0.35
357
150
-55to +150
Units
V
V
V
A
W
℃/mW
℃
℃
ELECTRICAL CHARACTERISTICS (Tamb=25
℃
unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE(1)
DC current gain
h
FE(2)
h
FE(3)
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
V
CE
(sat)
V
BE
(sat)
Test
conditions
I
E
=0
MIN
300
300
5
0.25
0.1
60
100
60
0.2
0.9
50
V
V
MHz
200
MAX
UNIT
V
V
V
μA
μA
I
C
= 100μA,
I
C
= 1mA, I
B
=0
I
E
= 100μA, I
C
=0
V
CB
=200V, I
E
=0
V
EB
= 5V, I
C
=0
V
CE
= 10V, I
C
= 1mA
V
CE
= 10V, I
C
=10mA
V
CE
=10V, I
C
=30mA
I
C
=20mA, I
B
= 2mA
I
C
= 20mA, I
B
=2mA
V
CE
= 20V, I
C
= 10mA,
f
T
f=
30MHz
１
JinYu
semiconductor
www.htsemi.com
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