MMBT4401
TRANSISTOR(NPN)
SOT-23
FEATURES
Switching transistor
MARKING: MMBT4401=2X
1.
BASE
2.
EMITTER
3.
COLLECTOR
MAXIMUM RATINGS (T
A
=25
℃
unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
R
Ө
JA
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power dissipation
Junction Temperature
Storage Temperature
Thermal Resistance, junction to Ambient
Value
60
40
6
600
0.3
150
-55to +150
357
Units
V
V
V
mA
W
℃
℃
℃/mW
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
CEO
I
EBO
h
FE
V
CE(sat)
V
BE(sat)
Test
conditions
MIN
60
40
6
0.1
0.1
0.1
100
300
0.4
0.95
250
V
V
MHz
MAX
UNIT
V
V
V
μA
μA
μA
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
I
C
= 100μA, I
E
=0
I
C
= 1mA, I
B
=0
I
E
= 100μA, I
C
=0
V
CB
=50 V, I
E
=0
V
CE
=30 V, I
B
=0
V
EB
=5V, I
C
=0
V
CE
=1V, I
C
=150mA
I
C
=150mA, I
B
=15mA
I
C
= 150mA, I
B
=15mA
V
CE
= 10V, I
C
= 20mA
f
T
f =
100MHz
１
JinYu
semiconductor
www.htsemi.com
Ｄ½½½：２０１１／０５
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