NCV8570B
200 mA, Ultra Low Noise,
High PSRR, LDO, Linear
Voltage Regulator
The NCV8570B is a 200 mA Low Dropout, Linear Voltage
Regulator with ultra low noise characteristics. It’s low noise combined
with high Power Supply Rejection Ratio (PSRR) make it especially
suited for use in RF, audio or imaging applications. The device is
manufactured in an advanced BiCMOS process to provide a powerful
combination of low noise and excellent dynamic performance but with
very low ground current consumption at full loads.
The NCV8570B is stable with small, low value capacitors allowing
designers to minimise the total PCB space occupied by the solution.
The device is packaged in a small 2x2.2mm DFN6 package as well as
in a TSOP-5 package.
Features
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DFN6
MN SUFFIX
CASE 506BA
TSOP−5
SN SUFFIX
CASE 483
PIN CONNECTIONS
EN
GND
IN
1
2
3
DFN6
(Top View)
1
IN
GND
EN
TSOP−5
(Top View)
BYP
5
OUT
6 BYP
5 GND
4 OUT
Ultra Low Noise (typ. 10
mVrms
@ V
OUT
= 1.8 V)
Very High PSRR (typ. 82 dB @ 1 kHz)
Excellent Line and Load Regulation
Stable with Ceramic Output Capacitors as low as 1
mF
Very Low Ground Current (typ. 75
mA
@ I
OUT
= 200 mA)
Low Sleep Mode Current (max. 1
mA)
Active Discharge Circuit
Current Limit and Thermal Shutdown Protection
Output Voltage Options:
1.8 V, 2.5 V, 2.8 V, 3.0 V, 3.3 V
Contact Factory for Other Voltage Options
NCV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q100
Qualified and PPAP Capable
These are Pb−Free Devices
Applications
MARKING DIAGRAMS
1
XX MG
G
Satellite and HD Radio
Portable/Built−in DVD Entertainment Systems
Noise Sensitive Applications (RF, Video, Audio)
GPS Systems
Camera for Lane Change Detection and Reverse View
DFN6 2x2.2
V
IN
3
1
C
IN
1
mF
ON
OFF
IN
NCV8570B
EN
GND
2, 5, EPAD
BYP
OUT
4
6
C
noise
10 nF
C
OUT
1
mF
V
OUT
XX = Specific Device Code
M = Date Code
G
= Pb−Free Package*
(*Note: Microdot may be in either location)
5
XXXAYWG
G
1
XXX = Specific Device Code
A
= Assembly Location
Y
= Year
W = Work Week
G
= Pb−Free Package*
(*Note: Microdot may be in either location)
ORDERING INFORMATION
Figure 1. NCV8570B Typical Application Schematic
See detailed ordering, marking and shipping information in the
package dimensions section on page 18 of this data sheet.
Semiconductor Components Industries, LLC, 2013
June, 2013
−
Rev. 3
1
Publication Order Number:
NCV8570B/D
NCV8570B
R
DIS
R
PD
Figure 2. Simplified Block Diagram
PIN FUNCTION DESCRIPTION
Pin No.
DFN6
1
Pin No.
TSOP−5
3
Pin Name
EN
Description
Enable pin: This pin allows on/off control of the regulator. To disable the device, connect to
GND. If this function is not in use, connect to Vin. Internal 5 MW Pull Down resistor is
connected between EN and GND.
Power Supply Ground (Pins are fused for the DFN6 package). Pins 2, 5 and EPAD are
connected together through the lead frame in the DFN6 package.
Power Supply Input Voltage
Regulated Output Voltage
Noise reduction pin. (Connect 10 nF or 100 nF capacitor to GND)
2, 5, EPAD
3
4
6
2
1
5
4
GND
IN
OUT
BYP
MAXIMUM RATINGS
Rating
Input Voltage (Note 2)
Chip Enable Voltage
Noise Reduction Voltage
Output Voltage
Output Short−Circuit Duration
Maximum Junction Temperature
Storage Temperature Range
T
J(max)
T
STG
Symbol
IN
EN
BYP
OUT
Value
−0.3
V to 6 V
−0.3
V to V
IN
+0.3 V
−0.3
V to V
IN
+0.3 V
−0.3
V to V
IN
+0.3 V
Infinity
125
−55
to 150
C
C
V
V
Unit
V
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may
affect device reliability.
1. This device series contains ESD protection and exceeds the following tests:
Human Body Model 2000 V tested per MIL−STD−883, Method 3015
Machine Model Method 200 V
This device meets or exceeds AEC−Q100 standard.
THERMAL CHARACTERISTICS
Rating
Package Thermal Resistance, DFN6: (Notes 2, 3)
Junction−to−Case (Pin 2)
Junction−to−Ambient
Package Thermal Resistance, TSOP−5: (Notes 2, 3)
Junction−to−Case (Pin 2)
Junction−to−Ambient
2. Refer to APPLICATION INFORMATION for Safe Operating Area
3. Single component mounted on 1 oz, FR4 PCB with 645mm
2
Cu area.
Symbol
Y
JL2
R
qJA
Y
JL2
R
qJA
Value
38
110
92
204
Unit
C/W
C/W
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NCV8570B
ELECTRICAL CHARACTERISTICS
(V
IN
= V
OUT
+ 0.5 V or 2.5 V (whichever is greater), V
EN
= 1.2 V, C
IN
= C
OUT
= 1
mF,
C
noise
= 10 nF, I
OUT
= 1 mA, T
J
=
−40C
to 125C,
unless otherwise specified) (Note 4)
Parameter
REGULATOR OUTPUT
Input Voltage Range
Output Voltage
1.8 V V
IN
= (V
OUT
+ 0.5 V) to 5.5 V
2.5 V I
OUT
= 1 mA to 200 mA
2.8 V
3.0 V
3.3 V
V
IN
= V
OUT
+1.0 V,
I
OUT
= 1 mA to 150 mA
f = 120 Hz
f = 1 kHz
f = 10 kHz
V
IN
V
OUT
2.5
1.755
2.4375
2.730
2.925
3.2175
(−2.5%)
−
−
−
−0.1
−
−
−
200
205
−
−
−
−
−
−
−
−
−
−
−
−
−
−
80
82
63
−
0.2
10
15
310
320
100
90
85
80
140
120
115
110
5.5
1.845
2.5625
2.870
3.075
3.3825
(+2.5%)
−
−
−
0.1
5.0
−
−
470
490
180
165
150
145
230
205
190
185
V
V
Test Conditions
Symbol
Min
Typ
Max
Unit
Power Supply Ripple Rejection
PSRR
dB
Line Regulation
Load Regulation
Output Noise Voltage
V
IN
= (V
OUT
+0.5 V) to 5.5 V, I
OUT
= 1 mA
I
OUT
= 1 mA to 200 mA
V
OUT
= 1.8 V,
C
noise
= 100 nF
f = 10 Hz to 100 kHz,
C
noise
= 10 nF
I
OUT
= 1 mA to 150 mA
V
OUT
= V
OUT(NOM)
– 0.1 V
V
OUT
= 0V
I
OUT
= 150 mA
V
OUT(NOM)
= 2.5 V
V
OUT(NOM)
= 2.8 V
V
OUT(NOM)
= 3.0 V
V
OUT(NOM)
= 3.3 V
V
OUT(NOM)
= 2.5 V
V
OUT(NOM)
= 2.8 V
V
OUT(NOM)
= 3.0 V
V
OUT(NOM)
= 3.3 V
DV
OUT
/
DV
IN
DV
OUT
/
DI
OUT
V
N
%/V
mV
mV
RMS
Output Current Limit
Output Short Circuit Current
Dropout Voltage (Note 5)
I
LIM
I
SC
V
DO
mA
mA
mV
Dropout Voltage (Note 5)
I
OUT
= 200 mA
V
DO
mV
GENERAL
Ground Current
Disable Current
Thermal Shutdown
I
OUT
= 1 mA
I
OUT
= 200 mA
V
EN
= 0 V
Shutdown, Temperature Increasing
Reset, Temperature Decreasing
OUTPUT ENABLE
Enable Threshold
Low
High
V
th(EN)
R
PD(EN)
−
1.2
2.5
−
−
5.0
0.4
−
10
V
MW
I
GND
I
DIS
T
SDU
T
SDD
−
−
−
−
−
70
75
0.1
150
135
110
130
1.0
−
−
mA
mA
C
C
Internal Pull−Down Resistance
(Note 6)
TIMING
Turn−On Time
Turn−Off Time
I
OUT
= 10 mA, V
OUT
=
0.975 V
OUT(NOM)
C
noise
= 10nF/100nF,
V
OUT
= 0.1 V
OUT(NOM)
C
noise
= 10 nF
C
noise
= 100 nF
I
OUT
= 1 mA
I
OUT
= 10 mA
t
ON
t
OFF
−
−
−
−
0.4
4.0
2.0
0.6
−
−
−
−
ms
ms
4. Performance guaranteed over the indicated operating temperature range by design and/or characterization tested at T
J
= T
A
= 25C. Low
duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible.
5. Measured when the output voltage falls 100 mV below the nominal output voltage (nominal output voltage is the voltage at the output meas-
ured under the condition V
IN
= V
OUT
+ 0.5 V). In the case of devices having the nominal output voltage V
OUT
= 1.8 V the minimum input
to output voltage differential is given by the V
IN(MIN)
= 2.5 V.
6. Expected to disable the device when EN pin is floating.
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NCV8570B
TYPICAL CHARACTERISTICS
1.836
V
out
, OUTPUT VOLTAGE (V)
1.824
1.812
1.800
1.788
1.776
1.764
−40
V
IN
= 2.5 V,
C
IN
= C
OUT
= 1
mF,
C
noise
= 10 nF
−20
0
20
40
60
80
100
120
Figure 3. Output Voltage vs. Junction
Temperature, V
OUT
= 1.8 V
2.8560
V
out
, OUTPUT VOLTAGE (V)
2.8373
2.8187
2.8000
2.7813
2.7627
2.7440
−40
−20
0
20
40
V
IN
= 3.3 V,
C
IN
= C
OUT
= 1
mF,
C
noise
= 10 nF
60
80
100
120
T
J
, JUNCTION TEMPERATURE (C)
Figure 4. Output Voltage vs. Junction
Temperature, V
OUT
= 2.8 V
3.06
V
out
, OUTPUT VOLTAGE (V)
3.04
3.02
3.00
2.98
2.96
2.94
−40
−20
0
20
40
V
IN
= 3.5 V,
C
IN
= C
OUT
= 1
mF,
C
noise
= 10 nF
60
80
100
120
T
J
, JUNCTION TEMPERATURE (C)
Figure 5. Output Voltage vs. Junction
Temperature, V
OUT
= 3.0 V
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T
J
, JUNCTION TEMPERATURE (C)
NCV8570B
TYPICAL CHARACTERISTICS
3.3660
V
out
, OUTPUT VOLTAGE (V)
3.3440
3.3220
3.3000
3.2780
3.2560
3.2340
−40
V
IN
= 3.8 V,
C
IN
= C
OUT
= 1
mF,
C
noise
= 10 nF
−20
0
20
40
60
80
100
120
V
DO
, DROPOUT VOLTAGE (mV)
180
150
120
90
60
T
J
=
−40C
30
0
0
C
IN
= C
OUT
= 1
mF,
C
noise
= 10 nF
T
J
= 25C
T
J
= 125C
40
80
120
160
200
Figure 6. Output Voltage vs. Junction
Temperature, V
OUT
= 3.3 V
180
V
DO
, DROPOUT VOLTAGE (mV)
150
120
90
60
30
0
0
T
J
=
−40C
180
V
DO
, DROPOUT VOLTAGE (mV)
150
120
T
J
, JUNCTION TEMPERATURE (C)
Figure 7. Dropout Voltage vs. Output Current,
V
OUT
= 2.8 V
I
OUT
, OUTPUT CURRENT (mA)
C
IN
= C
OUT
= 1
mF,
C
noise
= 10 nF
C
IN
= C
OUT
= 1
mF,
C
noise
= 10 nF
T
J
= 25C
T
J
= 125C
T
J
= 25C
90
T
J
= 125C
60
30
0
0
T
J
=
−40C
40
80
120
160
200
40
80
120
160
200
I
OUT
, OUTPUT CURRENT (mA)
I
OUT
, OUTPUT CURRENT (mA)
Figure 8. Dropout Voltage vs. Output Current,
V
OUT
= 3.0 V
Figure 9. Dropout Voltage vs. Output Current,
V
OUT
= 3.3 V
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