MMBFJ110 — N-Channel Switch
April 2011
MMBFJ110
N-Channel Switch
Features
• This device is designed for digital switching applications
where very low on resistance is mandatory.
• Sourced from process 58.
1
1. Drain 2. Source 3. Gate
SuperSOT-3
3
2
Marking : 110
Absolute Maximum Ratings*
T
A
=25°C unless otherwise noted
Symbol
V
DG
V
GS
I
GF
T
J
T
STG
Parameter
Drain-Gate Voltage
Gate-Source Voltage
Forward Gate Current
Junction Temperature
Storage Temperature Range
Value
25
-25
10
150
-55 to +150
Units
V
V
mA
°C
°C
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150°C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle
operations.
Thermal Characteristics*
T
A
=25°C unless otherwise noted
Symbol
P
D
Parameter
Value
460
3.68
270
Units
mW
mW/°C
°C/W
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Ambient
R
θJA
* Device mounted on a minimum pad.
Electrical Characteristics
T
A
=25°C unless otherwise noted
Symbol
Parameter
Conditions
I
G
= -10μA, V
DS
= 0
V
GS
= -15V, V
DS
= 0
V
GS
= -15V, V
DS
= 0, T
A
= 100°C
V
DS
= 15V, I
D
= 10nA
Min.
-25
Max.
Units
V
nA
nA
V
mA
Ω
pF
pF
pF
Off Characteristics
V
(BR)GSS
Gate-Source Breakdown Voltage
Gate Reverse Current
I
GSS
Gate-Source Cutoff Voltage
V
GS
(off)
On Characteristics
Zero-Gate Voltage Drain Current* V
DS
= 15V, I
GS
= 0
I
DSS
Drain-Source On Resistance
V
DS
≤
0.1V, V
GS
= 0
r
DS
(on)
Small Signal Characteristics
Drain-Gate &Source-Gate On
V
DS
= 0, V
GS
= 0, f = 1.0MHz
C
dg
(on)
Capacitance
C
sg
(off)
Drain-Gate Off Capacitance
V
DS
= 0, V
GS
= -10V, f = 1.0MHz
C
dg
(off)
Source-Gate Off Capacitance
V
DS
= 0, V
GS
= -10V, f = 1.0MHz
C
sg
(off)
* Pulse Test: Pulse Width
≤
300μs, Duty Cycle
≤
2.0%
-0.5
10
-3.0
-200
-4.0
18
85
15
15
© 2011 Fairchild Semiconductor Corporation
MMBFJ110 Rev. A0
1
www.fairchildsemi.com
MMBFJ110 — N-Channel Switch
Typical Performance Characteristics
Common Drain-Source
100
- DRAIN CURRENT (mA)
Common Drain-Source
50
- DRAIN CURRENT (mA)
T
A
= 25캜
°C
TYP V
GS(off)
= - 0.7 V
V
GS
= 0 V
- 2.0 V
80
- 1.0 V
- 3.0 V
40
30
60
40
20
- 5.0 V
V
GS
= 0 V
20
10
0
- 0.1 V
- 0.2 V
- 0.3 V
- 0.4 V - 0.5 V
- 4.0 V
T
A
= 25
캜
°C
TYP V
GS(off)
= - 5.0 V
D
I
0
I
0
D
0
0.4
0.8
1.2
1.6
V
DS
- DRAIN-SOURCE VOLTAGE (V)
2
2
3
4
V
DS
- DRAIN-SOURCE VOLTAGE (V)
1
5
Figure 1. Common Drain-Source
Figure 2. Common Drain-Source
Common Drain-Source
100
C
ts
(C
rs
) - CAPACITANCE (pF)
f = 0.1 - 1.0 MHz
C
iss
(V
DS
= 5.0V)
Parameter Interactions
r
DS
- DRAIN "ON" RESISTANCE
(Ω)
100
50
I
DSS
@ V
DS
= 5.0V, V
GS
= 0 PULSED
°C
r
DS
@ V
DS
= 100mV, V
GS
= 0
V
GS(off)
@ V
DS
= 5.0V, I
D
1,000
I
DSS
-
500
= 3.0 nA
DRAIN CURRENT (mA)
10
C
rss
(V
DS
= 0 )
r
DS
10
5
I
DSS
100
50
0
-8
-12
-16
V
GS
- GATE-SOURCE VOLTAGE (V)
-4
-20
_
0.1
V
GS (OFF)
10
_
_
_
0.5
1
5
10
- GATE CUTOFF VOLTAGE (V)
_
Figure 3. Capacitance vs Gate-Source Voltage
Figure 4. Parameter Interactions
Normalized Drain Resistance
vs Bias Voltage
r
DS
- NORMALIZED RESISTANCE
100
50
20
10
5
2
0
0.2
0.4
0.6
0.8
1
V /V
GS(off)
- NORMALIZED GA
TE-SOURCE VOLTAGE (V)
GS
1
e
n
- NOISE VOLTAGE (nV /
√
Hz)
V
GS(off)
@ 5.0V, 10
μA
Noise Voltage vs Frequency
100
V
DG
= 10V
= 0.21 @ f
≥
1.0 kHz
50
BW = 6.0 Hz @ f = 10 Hz, 100 Hz
r
DS
r
DS
=
V
GS
________
1 -
V
GS(off)
10
5
I
D
= 1.0 mA
I
D
= 10 mA
1
0.01 0.03
0.1
0.5 1 2
10
f - FREQUENCY (kHz)
100
Figure 5. Normalized Drain Resistance vs
Bias Voltage
Figure 6. Noise Voltage vs Frequency
© 2011 Fairchild Semiconductor Corporation
MMBFJ110 Rev. A0
2
www.fairchildsemi.com
MMBFJ110 — N-Channel Switch
Typical Performance Characteristics
(Continued)
Switching Turn-On Time vs
Gate-Source Cutoff Voltage
10
t
ON
- TURN-ON TIME (ns)
ON
8
6
4
I
D
= 10 mA
Switching Turn-On Time
vs Drain Current
50
t
OFF
- TURN-OFF TIME (ns)
40
30
20
10
0
T
A
= 25
°C
캜
V
DD
= 1.5V
V
GS(off)
= - 12V
I
D
= 30 mA
V
GS(off)
= - 8.5V
V
GS(off)
= - 5.5V
V
GS(off)
= - 3.5V
T
A
= 25
캜
°C
V
DD
= 1.5V
V
GS(off)
= - 12V
2
0
0
V
GS(off)
GS(off)
-2
-4
-6
-8
-10
- GATE-SOURCE CUTOFF VOLTAGE (V)
0
5
10
15
20
I
D
- DRAIN CURRENT (mA)
25
Figure 7. Switching Turn-On Time vs
Gate-Source Cutoff Voltage
Figure 8. Switching Turn-On Time vs Drain Current
r
DS
- DRAIN "ON" RESISTANCE
(Ω)
On Resistance vs Drain Current
100
50
V
GS(off)
= - 3.0V
125캜
°C
V
GS
= 0
g
os
- OUTPUT CONDUCTANCE (
μ
mhos)
Output Conductance
vs Drain Current
100
V
DG
= 5.0V
10V
V
GS(off)
- 4.0V
5.0V
10V
15V
20V
15V
20V
10
5
25캜
°C
°C
125캜
10
- 2.0V
5.0V
10V
15V
20V
25캜
°C
°C
- 55캜
V
GS(off)
= - 5.0V
- 1.0V
T
A
= 25캜
°C
f = 1.0 kHz
1
1
I
D
10
- DRAIN CURRENT (mA)
100
1
0.1
1
I
D
- DRAIN CURRENT (mA)
10
Figure 9. On Resistance vs Drain Current
Figure 10. Output Conductance vs Drain Current
g
fs
- TRANSCONDUCTANCE (mmhos)
Transconductance
vs Drain Current
100
V
DG
= 10V
f = 1.0 kHz
700
600
°C
T
A
= 25캜
°C
T
A
= 125캜
Power Dissipation, [mW]
10
T
A
= 25캜
°C
T
A
= - 55캜
°C
500
400
300
200
100
0
0
20
40
60
80
100
120
o
10
V
GS(off)
= - 1.0V
V
GS(off)
= - 3.0V
V
GS(off)
= - 5.0V
1
0.1
I
D
1
- DRAIN CURRENT (mA)
140
160
Ambient Temperature, T
a
[ C]
Figure 11. Transconductance vs Drain Current
Figure 12. Power Dissipation vs Ambient Temperature
© 2011 Fairchild Semiconductor Corporation
MMBFJ110 Rev. A0
www.fairchildsemi.com
3
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Rev. I53
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