SMBJ3V3
www.vishay.com
Vishay General Semiconductor
Surface Mount T
RANS
Z
ORB®
Transient Voltage Suppressors
FEATURES
• Uni-directional polarity only
• Peak pulse power: 600 W (10/1000 μs)
• Excellent clamping capability
• Very fast response time
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
SMB (DO-214AA)
TYPICAL APPLCIATIONS
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and lighting
on ICs, MOSFET, signal lines of sensor units specifically for
protecting 3.3 V supplied sensitive equipment against
transient overvoltages.
3.3 V
4.1 V
600 W
60 A
175 °C
PRIMARY CHARACTERISTICS
V
WM
V
BR
(uni-directional)
P
PPM
I
FSM
T
J
max.
Polarity
Package
MECHANICAL DATA
Case:
SMB (DO-214AA)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Terminals:
matte tin plated leads, solderable
J-STD-002 and JESD22-B102
M3 suffix meets JESD 201 class 2 whisker test
Polarity:
color band denotes cathode end
per
Uni-directional
SMB (DO-214AA)
MAXIMUM RATINGS
(T
A
= 25 °C, unless otherwise noted)
PARAMETER
Peak pulse power dissipation
Peak pulse current with a 10/1000 μs waveform (fig. 1)
Peak pulse current with a 8/20 μs waveform (fig. 1)
Non-repetitive peak forward surge current 8.3 ms single half sine-wave
Power dissipation on infinite heatsink, T
L
= 75 °C
Operating junction and storage temperature range
Notes
(1)
Non-repetitive current pulse, per fig. 1
(2)
Mounted on 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pads to each terminal
SYMBOL
P
PPM (1)(2)
I
PP
I
PPM
I
FSM (2)
P
D
T
J
, T
STG
VALUE
600
50
200
60
5
- 65 to + 175
UNIT
W
A
A
A
W
°C
ELECTRICAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
DEVICE
TYPE
DEVICE
MARKING
CODE
BREAKDOWN
VOLTAGE
V
BR
AT I
T
MIN.
V
SMBJ3V3
KC
4.1
mA
1.0
MAXIMUM
REVERSE
LEAKAGE
CURRENT
I
R
AT V
WM
μA
200
TYPICAL
MAXIMUM MAXIMUM
TYPICAL
JUNCTION
STAND-OFF CLAMPING CLAMPING
TEMPERATURE
CAPACITANCE
VOLTAGE VOLTAGE
VOLTAGE
COEFFICIENT
C
J
AT 0 V
V
C
AT I
PP
V
C
AT I
PPM
V
WM
OF V
BR
1 MHz
10/1000 μs
8/20 μs
V
3.3
V
7.3
A
50
V
10.3
A
200
10
-4
/°C
-5.3
pF
5200
Revision: 02-Aug-2018
Document Number: 89419
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SMBJ3V3
www.vishay.com
Vishay General Semiconductor
SYMBOL
R
JL
(1)
R
JA
(2)
VALUE
20
100
UNIT
°C/W
°C/W
THERMAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Typical thermal resistance, junction to lead
Typical thermal resistance, junction to ambient
Notes
(1)
Thermal resistance from junction to lead - mounted on 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pads to each terminal
(2)
Thermal resistance from junction to ambient - mounted on the recommended PCB pad layout
ORDERING INFORMATION
(Example)
PREFERRED P/N
SMBJ3V3-M3/52
SMBJ3V3-M3/5B
UNIT WEIGHT (g)
0.096
0.096
PREFERRED PACKAGE CODE
52
5B
BASE QUANTITY
750
3200
DELIVERY MODE
7" diameter plastic tape and reel
13" diameter plastic tape and reel
RATINGS AND CHARACTERISTICS CURVES
(T
A
= 25 °C unless otherwise noted)
150
10
I
PPM
- Peak Pulse Current, % I
RSM
t
r
= 10
µs
t
r
= 8
µs
Peak Value
I
PPM
100
Half Value - I
PP
I
PPM
2
50
t
d
= 1000 µs
t
d
= 20 µs
I
R
(T
J
)/I
R
(T
J
= 25 °C)
T
J
= 25 °C
Pulse Width (t
d
)
is defined as the Point
where the Peak Current
decays to 50 % of I
PPM
1
t
d
0
0
1.0
2.0
3.0
4.0
0.1
0
25
50
75
100
125
150
175
t - Time (ms)
T
J
- Junction T emperature (°C)
Fig. 1 - Pulse Waveform
Fig. 3 - Relative Variation of Leakage Current vs.
Junction Temperature
10
10
P
PPM
- Peak Pulse Power (kW)
Clamping Voltage (V)
8
1
6
10/1000 µs
8/20 µs
0.1
0.01
4
0.1
1
10
0.1
1
10
100
1000
t
d
- Pulse Width (ms)
I
PP
(A)
Fig. 2 - Peak Pulse Power Rating Curve
Fig. 4 - Clamping Voltage vs. Peak Pulse Current
(T
J
initial = 25 °C)
Revision: 02-Aug-2018
Document Number: 89419
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SMBJ3V3
www.vishay.com
Vishay General Semiconductor
100
5500
C
J
- Junction Capacitance (pF)
I
F
- Peak Forward Current (A)
5000
4500
4000
3500
3000
2500
2000
0
0.5
1
1.5
2
2.5
3
3.5
T
J
= 175 °C
10
T
J
= 25 °C
1
0.1
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
Reverse Voltage (V)
V
F
- Forward Voltage Drop (V)
Fig. 5 - Typical Junction Capacitance
Fig. 7 - Typical Peak Forward Voltage Drop vs. Peak
Forward Current
100
10
1
0.01
0.1
1
10
100
1000
t - Pulse Duration (s)
Transient Thermal Impedance (°C/W)
Fig. 6 - Typical Transient Thermal Impedance
PACKAGE OUTLINE DIMENSIONS
in inches (millimeters)
SMB
(DO-214AA)
Cathode Band
0.085 (2.159)
MAX.
Mounting Pad Layout
0.086 (2.20)
0.077 (1.95)
0.155 (3.94)
0.130 (3.30)
0.086 (2.18)
MIN.
0.180 (4.57)
0.160 (4.06)
0.012 (0.305)
0.006 (0.152)
0.096 (2.44)
0.084 (2.13)
0.060 (1.52)
MIN.
0.220 REF.
0.060 (1.52)
0.030 (0.76)
0.220 (5.59)
0.205 (5.21)
0.008 (0.2)
0 (0)
Revision: 02-Aug-2018
Document Number: 89419
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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www.vishay.com
Vishay
Disclaimer
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Revision: 08-Feb-17
1
Document Number: 91000