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TS6B01G

产品描述6 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE
产品类别半导体    分立半导体   
文件大小34KB,共2页
制造商Taiwan Semiconductor
官网地址http://www.taiwansemi.com/
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TS6B01G概述

6 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE

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TS6B01G
THRU
TS6B07G
Single Phase 6.0 Amps. Glass Passivated Bridge Rectifiers
Voltage Range
50 to 1000 Volts
Current
6.0 Amperes
Features
a
a
a
a
a
UL Recognized File # E-96005
Ideal for printed circuit board
Reliable low cost construction
Plastic material has Underwriters
Laboratory Flammability Classification
94V-0
Surge overload rating to 150 amperes
peak
0
TS4B
.147(3.7)
.130(3.3)
.118(3.0)X45
.996(25.3)
.972(24.7)
.602(15.3)
.579(14.7)
.134(3.4)
.122(3.1)
.176(4.37)
.156(3.96)
.068(1.73)
.060(1.52)
Mechanical Data
a
a
a
a
Case: Molded plastic
Terminals: Leads solderable per MIL-
Terminals:
STD-750, Method 2026
Weight: 0.15 ounce, 4 grams
Mounting torque: 5 in. lbs. max.
.043(1.1)
.035(0.9)
.709(18)
.669(17)
.087(2.2)
.071(1.8)
.303(7.7)
.287(7.3)
.030(0.75)
.022(0.55)
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Rating at 25°C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
TS6B TS6B TS6B TS6B TS6B TS6B TS6B
Units
Type Number
01G
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
See Fig. 2
Peak Forward Surge Current, 8.3 ms Single
Half Sine-wave Superimposed on Rated Load
(JEDEC method )
Maximum Instantaneous Forward Voltage
@ 6.0A
Maximum DC Reverse Current @ T
A
=25°C
at Rated DC Blocking Voltage @ T
A
=125°C
Operating Temperature Range T
J
Storage Temperature Range T
STG
02G
03G
04G
05G
06G
07G
50
35
50
100
70
100
200
140
200
400
280
400
6.0
150
1.0
600
420
600
800
560
800
1000
700
1000
V
V
V
A
A
V
uA
uA
°C
°C
5.0
500
-55 to +150
-55 to + 150
- 502 -

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