VS-8TQ...GPbF Series, VS-8TQ...G-N3 Series
www.vishay.com
Vishay Semiconductors
Schottky Rectifier, 8 A
FEATURES
Base
cathode
2
• 175 °C T
J
operation
• Low forward voltage drop
• High frequency operation
• High
purity,
high
temperature
epoxy
encapsulation for enhanced mechanical
strength and moisture resistance
• Guard ring for enhanced ruggedness and long
term reliability
• Compliant to RoHS Directive 2002/95/EC
• Designed and qualified according to JEDEC-JESD47
TO-220AC
1
Cathode
3
Anode
PRODUCT SUMMARY
Package
I
F(AV)
V
R
V
F
at I
F
I
RM
max.
T
J
max.
Diode variation
E
AS
TO-220AC
8A
80 V, 100 V
0.58 V
7 mA at 125 °C
175 °C
Single die
7.5 mJ
• Halogen-free according to IEC 61249-2-21 definition
(-N3 only)
DESCRIPTION
The VS-8TQ...G Schottky rectifier series has been optimized
for low reverse leakage at high temperature. The proprietary
barrier technology allows for reliable operation up to 175 °C
junction temperature. Typical applications are in switching
power supplies, converters, freewheeling diodes, and
reverse battery protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
I
F(AV)
V
RRM
I
FSM
V
F
T
J
t
p
= 5 μs sine
8 A
pk
, T
J
= 125 °C
Range
CHARACTERISTICS
Rectangular waveform
VALUES
8
100
850
0.58
- 55 to 175
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse
voltage
Maximum working
peak reverse voltage
SYMBOL
V
R
80
V
RWM
80
100
100
V
VS-8TQ080GPbF
VS-8TQ080G-N3
VS-8TQ100GPbF
VS-8TQ100G-N3
UNITS
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average forward current
See fig. 5
Maximum peak one cycle
non-repetitive surge current
See fig. 7
Non-repetitive avalanche energy
Repetitive avalanche current
SYMBOL
I
F(AV)
TEST CONDITIONS
50 % duty cycle at T
C
= 157 °C, rectangular waveform
5 µs sine or 3 µs rect. pulse
I
FSM
10 ms sine or 6 ms rect. pulse
E
AS
I
AR
Following any rated load
condition and with rated
V
RRM
applied
VALUES
8
850
230
7.50
0.50
mJ
A
A
UNITS
T
J
= 25 °C, I
AS
= 0.50 A, L = 60 mH
Current decaying linearly to zero in 1 μs
Frequency limited by T
J
maximum V
A
= 1.5 x V
R
typical
Revision: 11-Oct-11
Document Number: 94263
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-8TQ...GPbF Series, VS-8TQ...G-N3 Series
www.vishay.com
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
8A
Maximum forward voltage drop
See fig. 1
V
FM (1)
16 A
8A
16 A
Maximum reverse leakage curent
See fig. 2
Maximum junction capacitance
Typical series inductance
I
RM (1)
C
T
L
S
T
J
= 25 °C
T
J
= 125 °C
TEST CONDITIONS
T
J
= 25 °C
T
J
= 125 °C
V
R
= Rated V
R
VALUES
0.72
0.88
0.58
0.69
0.28
7
500
8
10 000
mA
pF
nH
V/µs
V
UNITS
V
R
= 5 V
DC
(test signal range 100 kHz to 1 MHz) 25 °C
Measured lead to lead 5 mm from package body
Rated V
R
Maximum voltage rate of change
dV/dt
Note
(1)
Pulse width < 300 μs, duty cycle < 2 %
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and
storage temperature range
Maximum thermal resistance,
junction to case
Typical thermal resistance,
case to heatsink
Approximate weight
minimum
maximum
Case style TO-220AC
SYMBOL
T
J
, T
Stg
R
thJC
R
thCS
DC operation
See fig. 4
Mounting surface, smooth and greased
TEST CONDITIONS
VALUES
- 55 to 175
2.0
°C/W
0.50
2
0.07
6 (5)
12 (10)
g
oz.
kgf · cm
(lbf · in)
8TQ080G
8TQ100G
UNITS
°C
Mounting torque
Marking device
Revision: 11-Oct-11
Document Number: 94263
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-8TQ...GPbF Series, VS-8TQ...G-N3 Series
www.vishay.com
Vishay Semiconductors
100
I
F
- Instantaneous Forward Current (A)
1000
T
J
= 175 °C
T
J
= 150 °C
T
J
= 125 °C
T
J
= 100 °C
100
I
R
- Reverse Current (µA)
10
1
0.1
10
T
J
= 75 °C
0.01
0.001
0.0001
T
J
= 50 °C
T
J
= 25 °C
1
T
J
= 175 °C
T
J
= 125 °C
T
J
= 25 °C
0.1
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2
0
20
40
60
80
100
V
FM
- Forward Voltage Drop (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
V
R
- Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
1000
C
T
- Junction Capacitance (pF)
T
J
= 25 °C
100
0
10 20 30 40 50 60 70 80
90 100 110
V
R
- Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Z
thJC
- Thermal Impedance (°C/W)
10
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
1
Single pulse
(thermal resistance)
0.1
0.0001
0.001
0.01
0.1
1
t
1
- Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics
Revision: 11-Oct-11
Document Number: 94263
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-8TQ...GPbF Series, VS-8TQ...G-N3 Series
www.vishay.com
Vishay Semiconductors
7
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
RMS limit
180
Allowable Case Temperature (°C)
170
165
160
155
150
145
140
0
2
4
6
See note (1)
DC
Average Power Loss (W)
175
6
5
4
3
Square
wave
(D = 0.50)
80
% rated
V
R
applied
DC
2
1
0
8
10
12
0
2
4
6
8
10
12
I
F(AV)
- Average Forward Current (A)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
I
F(AV)
- Average Forward Current (A)
Fig. 6 - Forward Power Loss Characteristics
I
FSM
- Non-Repetitive Surge Current (A)
1000
At any rated load condition
and
with
rated
V
RRM
applied
following surge
100
10
100
1000
10 000
t
p
- Square Wave Pulse Duration (µs)
Fig. 7 - Maximum Non-Repetitive Surge Current
L
High-speed
switch
Freewheel
diode
40HFL40S02
+
V
d
= 25
V
D.U.T.
IRFP460
R
g
= 25
Ω
Current
monitor
Fig. 8 - Unclamped Inductive Test Circuit
Note
(1)
Formula used: T = T - (Pd + Pd
C
J
REV
) x R
thJC
;
Pd = Forward power loss = I
F(AV)
x V
FM
at (I
F(AV)
/D) (see fig. 6);
Pd
REV
= Inverse power loss = V
R1
x I
R
(1 - D); I
R
at V
R1
= 80 % rated V
R
Revision: 11-Oct-11
Document Number: 94263
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-8TQ...GPbF Series, VS-8TQ...G-N3 Series
www.vishay.com
ORDERING INFORMATION TABLE
Device code
Vishay Semiconductors
VS-
1
8
2
T
3
Q
4
100
5
G
6
PbF
7
1
2
3
4
5
6
7
-
-
-
-
-
-
Vishay Semiconductors product
Current rating (8 = 8 A)
T = TO-220
Q = Schottky “Q” series
Voltage rating (100 = 100 V)
G = Schottky generation
Environmental digit
PbF = Lead (Pb)-free and RoHS compliant
-N3 = Halogen-free, RoHS compliant, and totally lead (Pb)-free
-
ORDERING INFORMATION
(Example)
PREFERRED P/N
VS-8TQ080GPbF
VS-8TQ080G-N3
VS-8TQ100GPbF
VS-8TQ100G-N3
QUANTITY PER T/R
50
50
50
50
MINIMUM ORDER QUANTITY
1000
1000
1000
1000
PACKAGING DESCRIPTION
Antistatic plastic tube
Antistatic plastic tube
Antistatic plastic tube
Antistatic plastic tube
LINKS TO RELATED DOCUMENTS
Dimensions
Part marking information
SPICE model
TO-220AC PbF
TO-220AC -N3
www.vishay.com/doc?95221
www.vishay.com/doc?95224
www.vishay.com/doc?95068
www.vishay.com/doc?95291
Revision: 11-Oct-11
Document Number: 94263
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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