VS-80CPQ020PbF, VS-80CPQ020-N3
www.vishay.com
Vishay Semiconductors
Schottky Rectifier, 2 x 40 A
Base
common
cathode
2
FEATURES
• 150 °C T
J
operation
• Optimized for 3.3 V application
• Ultralow forward voltage drop
• High frequency operation
• Guard ring for enhanced ruggedness and long
term reliability
TO-247AC
1
3
Anode
Anode
2
1
2
Common
cathode
• High
purity,
high
temperature
epoxy
encapsulation for enhanced mechanical
strength and moisture resistance
• Compliant to RoHS Directive 2002/95/EC
• Designed and qualified according to JEDEC-JESD47
• Halogen-free according to IEC 61249-2-21 definition
(-N3 only)
PRODUCT SUMMARY
Package
I
F(AV)
V
R
V
F
at I
F
I
RM
max.
T
J
max.
Diode variation
E
AS
TO-247AC
2 x 40 A
20 V
0.36 V
1100 mA at 125 °C
150 °C
Common cathode
27 mJ
DESCRIPTION
This center tap Schottky rectifier has been optimized for
ultralow forward voltage drop specifically for 3.3 V output
power supplies. The proprietary barrier technology allows
for reliable operation up to 150 °C junction temperature.
Typical applications are in parallel switching power supplies,
converters, reverse battery protection, and redundant
power subsystems.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
I
F(AV)
V
RRM
I
FSM
V
F
T
J
t
p
= 5 μs sine
40 Apk, T
J
= 150 °C (per leg)
Range
CHARACTERISTICS
Rectangular waveform
VALUES
80
20
2200
0.32
- 55 to 150
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak reverse voltage
SYMBOL
V
R
V
RWM
VS-80CPQ020PbF
20
VS-80CPQ020-N3
20
UNITS
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average
forward current
per leg
per device
SYMBOL
I
F(AV)
TEST CONDITIONS
50 % duty cycle at T
C
= 138 °C, rectangular waveform
5 µs sine or 3 µs rect. pulse
I
FSM
E
AS
I
AR
10 ms sine or 6 ms rect. pulse
T
J
= 25 °C, I
AS
= 6 A, L = 1.5 mH
Current decaying linearly to zero in 1 μs
Frequency limited by T
J
maximum V
A
= 1.5 x V
R
typical
Following any rated
load condition and with
rated V
RRM
applied
VALUES
40
80
2200
500
27
6
mJ
A
A
UNITS
Maximum peak one cycle
non-repetitive surge current per leg
Non-repetitive avalanche energy per leg
Repetitive avalanche current per leg
Revision: 31-Aug-11
Document Number: 94256
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-80CPQ020PbF, VS-80CPQ020-N3
www.vishay.com
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
40 A
80 A
Maximum forward
voltage drop per leg
V
FM (1)
40 A
80 A
40 A
80 A
T
J
= 125 °C
Maximum reverse
leakage current per leg
I
RM (1)
T
J
= 150 °C
T
J
= 25 °C
T
J
= 125 °C
Threshold voltage
Maximum junction capacitance per leg
Typical series inductance per leg
Maximum voltage rate of change
Note
(1)
Pulse width < 300 μs, duty cycle < 2 %
V
F(TO)
C
T
L
S
dV/dt
T
J
= T
J
maximum
V
R
= 5 V
DC
(test signal range 100 kHz to 1 MHz) 25 °C
Measured lead to lead 5 mm from package body
Rated V
R
TEST CONDITIONS
T
J
= 25 °C
T
J
= 125 °C
T
J
= 150 °C
V
R
= 5 V
V
R
= 10 V
V
R
= Rated V
R
VALUES
0.46
0.55
0.36
0.46
0.32
0.43
110
600
5.5
1100
0.185
6500
7.5
10 000
V
pF
nH
V/µs
mA
V
UNITS
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and storage
temperature range
Maximum thermal resistance,
junction to case per leg
Maximum thermal resistance,
junction to case per package
Typical thermal resistance,
case to heatsink
Approximate weight
minimum
maximum
Case style TO-247AC (JEDEC)
SYMBOL
T
J
, T
Stg
TEST CONDITIONS
VALUES
- 55 to 150
0.6
R
thJC
DC operation
0.3
R
thCS
Mounting surface, smooth and greased
0.25
6
0.21
6 (5)
12 (10)
g
oz.
kgf · cm
(lbf · in)
80CPQ020
°C/W
UNITS
°C
Mounting torque
Marking device
Revision: 31-Aug-11
Document Number: 94256
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-80CPQ020PbF, VS-80CPQ020-N3
www.vishay.com
Vishay Semiconductors
10 000
1000
I
R
- Reverse Current (mA)
1000
100
10
1
0.1
0.01
I
F
- Instantaneous
Forward Current (A)
T
J
= 150 °C
T
J
= 125 °C
T
J
= 100 °C
T
J
= 75 °C
T
J
= 50 °C
T
J
= 25 °C
100
T
J
= 150 °C
T
J
= 125 °C
T
J
= 25 °C
10
1
0
0.2
0.4
0.6
0.8
1.0
1.2
0
4
8
12
16
20
V
FM
- Forward Voltage Drop (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
(Per Leg)
V
R
- Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage (Per Leg)
10 000
C
T
- Junction Capacitance (pF)
T
J
= 25 °C
1000
0
5
10
15
20
25
V
R
- Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage (Per Leg)
Z
thJC
- Thermal Impedance (°C/W)
1
P
DM
0.1
Single pulse
(thermal resistance)
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
t
1
t
2
Notes:
1. Duty factor D = t
1
/t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
t
1
- Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics (Per Leg)
Revision: 31-Aug-11
Document Number: 94256
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-80CPQ020PbF, VS-80CPQ020-N3
www.vishay.com
Vishay Semiconductors
Allowable Case Temperature (°C)
150
145
25
Average Power Loss (W)
DC
140
135
130
125
20
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
RMS limit
15
Square wave (D = 0.50)
10 V applied
10
DC
5
See note (1)
120
0
0
10
20
30
40
50
60
0
10
20
30
40
50
60
I
F(AV)
- Average Forward Current (A)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current (Per Leg)
I
F(AV)
- Average Forward Current (A)
Fig. 6 - Forward Power Loss Characteristics (Per Leg)
I
FSM
- Non-Repetitive Surge Current (A)
10 000
1000
At any rated load condition
and with rated V
RRM
applied
following surge
100
10
100
1000
10 000
t
p
- Square Wave Pulse Duration (µs)
Fig. 7 - Maximum Non-Repetitive Surge Current (Per Leg)
L
High-speed
switch
Freewheel
diode
40HFL40S02
+
V
d
= 25
V
D.U.T.
IRFP460
R
g
= 25
Ω
Current
monitor
Fig. 8 - Unclamped Inductive Test Circuit
Note
Formula used: T
C
= T
J
- (Pd + Pd
REV
) x R
thJC
;
Pd = Forward power loss = I
F(AV)
x V
FM
at (I
F(AV)
/D) (see fig. 6);
Pd
REV
= Inverse power loss = V
R1
x I
R
(1 - D); I
R
at V
R1
= 10 V
Document Number: 94256
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
(1)
Revision: 31-Aug-11
VS-80CPQ020PbF, VS-80CPQ020-N3
www.vishay.com
ORDERING INFORMATION TABLE
Device code
Vishay Semiconductors
VS-
1
80
2
C
3
P
4
Q
5
020 PbF
6
7
1
2
3
4
5
6
7
-
-
-
-
Vishay Semiconductors product
Current rating (80 = 80 A)
Circuit configuration:
C = Common cathode
Package:
P = TO-247
-
-
Schottky “Q” series
Voltage code (020 = 20 V)
Environmental digit
PbF = Lead (Pb)-free and RoHS compliant
-N3 = Halogen-free, RoHS compliant, and totally lead (Pb)-free
-
ORDERING INFORMATION
(Example)
PREFERRED P/N
VS-80CPQ020PbF
VS-80CPQ020-N3
QUANTITY PER T/R
25
25
MINIMUM ORDER QUANTITY
500
500
PACKAGING DESCRIPTION
Antistatic plastic tube
Antistatic plastic tube
LINKS TO RELATED DOCUMENTS
Dimensions
Part marking information
SPICE model
TO-247AC PbF
TO-247AC -N3
www.vishay.com/doc?95223
www.vishay.com/doc?95226
www.vishay.com/doc?95007
www.vishay.com/doc?95289
Revision: 31-Aug-11
Document Number: 94256
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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