UML2N
Isolated transistor and diodes
Features
The 2SC2412K and a diodes are housed independently
In a package
MARKING：L2
SOT-353
1
TR MAXIMUM RATINGS (T
a
=25℃ unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
60
50
6
150
150
150
-55 to150
Units
V
V
V
mA
mW
℃
℃
DIO Maximum Ratings and Electrical Characteristics, Single Diode @T
a
=25℃
Parameter
DC reverse voltage
Peak Reverse Voltage
Forward Continuous Current
Average Rectified Output Current
Surge current
Junction temperature
Storage temperature
Symbol
V
R
V
RM
I
FM
I
O
I
SURGE
T
j
T
STG
Limits
80
80
300
100
4
150
-55~+150
Unit
V
V
mA
mA
A
℃
℃
1
JinYu
semiconductor
www.htsemi.com
Date:2011/ 05
UML2N
TR ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
f
T
C
ob
Test
conditions
Min
60
50
6
0.1
0.1
120
560
0.4
180
3.5
V
MHz
pF
Typ
Max
Unit
V
V
V
μA
μA
I
C
=50μA,I
E
=0
I
C
=1mA,I
B
=0
I
E
=50μA,I
C
=0
V
CB
=60V,I
E
=0
V
EB
=5V,I
C
=0
V
CE
=6V,I
C
=1mA
I
C
=50mA,I
B
=5mA
V
CE
=12V,I
C
=2mA,f=100MHz
V
CB
=12V,I
E
=0,f=1MHz
DIO Electrical Ratings @T
a
=25℃
Parameter
Forward voltage
Reverse current
Capacitance between terminals
Reverse Recovery Time
Symbol
V
F
I
R
C
T
t
rr
Min.
Typ.
Max.
1.2
0.1
3.5
4
Unit
V
μA
pF
ns
Conditions
I
F
=100mA
V
R
=70V
V
R
=6V,f=1MHz
V
R
=6V,
I
F
=5mA,R
L
=50Ω
2
JinYu
semiconductor
www.htsemi.com
Date:2011/ 05
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