UMH14N
dual digital transistors (NPN+ NPN)
SOT-363
FEATURES
Two DTC144T chips in a package.
1
Marking: H14
Equivalent circuit
Absolute maximum ratings (Ta=25℃)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
D
T
J
T
stg
Parameter
Collector-base Voltage
Collector-emitter Voltage
Emitter-base Voltage
Collector current
Power dissipation
Junction temperature
Storage temperature
Value
50
50
5
100
150
150
-55~+150
Units
V
V
V
mA
mW
℃
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current transfer ration
Collector-emitter saturation voltage
Transition frequency
Input resistance
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
f
T
R
1
Test
conditions
Min
50
50
5
500
500
100
600
0.3
250
32.9
61.1
V
MHz
KΩ
Typ
Max
Unit
V
V
V
nA
nA
I
C
=50μA, I
E
=0
I
C
=1mA, I
B
=0
I
E
=50μA, I
C
=0
V
CB
=50V, I
E
=0
V
EB
=4V, I
C
=0
V
CE
=5V, I
C
=1mA
I
C
=5mA, I
B
=0.5mA
V
CE
=10V, I
C
=5mA, f =100MHz
1
JinYu
semiconductor
www.htsemi.com
Date:2011/ 05
嵌入式系统
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