SMG2391P
Elektronische Bauelemente
-0.9A , -150V , R
DS(ON)
1.2
Ω
P-Channel Enhancement Mode MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead-free
FEATURES
Low R
DS(on)
trench technology
Low thermal impedance
Fast switching speed
1
SC-59
A
L
3
3
Top View
2
C B
1
2
K
E
D
APPLICATIONS
PoE Power Sourcing Equipment
PoE Powered Devices
Telecom DC/DC converters
White LED boost converters
F
G
H
J
REF.
A
B
C
D
E
F
PACKAGE INFORMATION
Package
SC-59
MPQ
3K
Leader Size
7 inch
Millimeter
Min.
Max.
2.70
3.10
2.25
3.00
1.30
1.70
1.00
1.40
1.70
2.30
0.35
0.50
REF.
G
H
J
K
L
TOP VIEW
Millimeter
Min.
Max.
0.10 REF.
0.40 REF.
0.10
0.20
0.45
0.55
0.85
1.15
1
3
2
ABSOLUTE MAXIMUM RATINGS
(
T
A
=25°C unless otherwise specified)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Power Dissipation
1
2
1
Symbol
V
DS
V
GS
T
A
=25°
C
I
D
T
A
=70°
C
I
DM
C
T
A
=25°
T
A
=70°
C
P
D
I
S
T
J
, T
STG
Ratings
-150
±20
-0.9
Unit
V
V
A
-0.8
5
1.3
W
0.8
1.5
-55~150
A
°
C
A
Continuous Source Current (Diode Conduction)
1
Operating Junction and Storage Temperature Range
Thermal Resistance Rating
Maximum Junction to Ambient
1
t<= 10sec
Steady State
R
θJA
100
166
° /W
C
Notes:
1. Surface mounted on 1”x1” FR4 board.
2. Pulse width limited by Max. junction temperature.
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
27-Oct-2011 Rev. A
Page 1 of 4
SMG2391P
Elektronische Bauelemente
-0.9A , -150V , R
DS(ON)
1.2
Ω
P-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS
(T
A
=25°C unless otherwise specified)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Teat Conditions
Static
On-State Drain Current
Gate-Source Threshold Voltage
Gate-Body Leakage Current
Drain-Source Leakage Current
I
D(on)
V
GS(th)
I
GSS
I
DSS
-0.5
-1
-
-
-
-
-
-
-
-
-
-
-
2.2
-0.8
-
-
A
V
nA
µA
V
DS
= -5V,V
GS
= -10V
V
DS
=V
GS
, I
D
= -250uA
V
DS
=0,V
GS
=
±
20V
V
DS
= -120V, V
GS
=0
V
DS
= -120V, V
GS
=0,T
J
=55°
C
V
GS
= -10V, I
D
= -0.8A
V
GS
= -4.5V, I
D
= -0.7A
±
100
-1
-10
1.2
1.3
-
-
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
R
DS(ON)
g
fs
V
SD
-
-
-
S
V
V
DS
= -15V, I
D
= -0.5A
I
S
= -0.75A, V
GS
=0
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Q
g
Q
gs
Q
gd
T
d(on)
T
r
T
d(off)
T
f
C
iss
C
oss
C
rss
-
-
-
-
-
-
-
-
-
-
3.4
1.3
1.6
3
10
15
11
334
41
23
-
-
-
-
-
nS
-
-
-
-
-
pF
nC
V
DS
= -75V,
V
GS
= -4.5V,
I
D
= -0.8A
V
DD
= -75V,
V
GEN
= -10V,
R
GEN
=6 ,
R
L
=93.8 ,
I
D
= -0.8A
V
DS
= -15V,
V
GS
=0,
f=1.0MHz
Notes:
1. Pulse test : PW≦300µs, duty cycle≦2%.
2. Guaranteed by design, not subject to production testing.
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
27-Oct-2011 Rev. A
Page 2 of 4
SMG2391P
Elektronische Bauelemente
-0.9A , -150V , R
DS(ON)
1.2
Ω
P-Channel Enhancement Mode MOSFET
CHARACTERISTIC CURVES
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
27-Oct-2011 Rev. A
Page 3 of 4
SMG2391P
Elektronische Bauelemente
-0.9A , -150V , R
DS(ON)
1.2
Ω
P-Channel Enhancement Mode MOSFET
CHARACTERISTIC CURVES
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
27-Oct-2011 Rev. A
Page 4 of 4
TI技术论坛
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
