VSB20L45
www.vishay.com
Vishay General Semiconductor
Ultra Low V
F
= 0.26 V at I
F
= 5 A
FEATURES
• Trench MOS Schottky technology
Photovoltaic Solar Cell Protection Schottky Rectifier
TMBS
®
• Low forward voltage drop, low power losses
• High efficiency operation
• High forward surge capability
• ESD capability
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• T
J
200 °C max. in solar by-pass mode application
• Material categorization: For definitions of compliance
please see
www.vishay.com/doc?99912
P600
PRIMARY CHARACTERISTICS
I
F(DC)
V
RRM
I
FSM
V
F
at I
F
= 20 A
T
OP
max. (AC mode)
T
J
max. (DC forward current)
Package
Diode variation
20 A
45 V
250 A
0.40 V
150 °C
200 °C
P600
Single die
TYPICAL APPLICATIONS
For use in solar cell junction box as a bypass diode for
protection, using DC forward current without reverse bias.
MECHANICAL DATA
Case:
P600
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Terminals:
Matte tin plated leads, solderable
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test
Polarity:
Color band denotes cathode end
per
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Device marking code
Maximum repetitive peak reverse voltage
Maximum average forward rectified current (fig. 1)
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load
Operating junction temperature range (AC mode)
Storage temperature range
Junction temperature in DC forward current
without reverse bias, t 1 h
V
RRM
I
F(AV) (1)
I
F(AV) (2)
I
FSM
T
OP
T
STG
T
J (3)
SYMBOL
VSB20L45
V20L45
45
20
7.5
250
-40 to +150
-40 to +175
200
°C
A
V
UNIT
Notes
(1)
With heatsink
(2)
Without heatsink, free air
(3)
Meets the requirements of IEC 61215 ed. 2 bypass diode thermal test
Revision: 23-Oct-13
Document Number: 89480
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VSB20L45
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
I
F
= 5.0 A
I
F
= 10 A
Instantaneous forward voltage
I
F
= 20 A
I
F
= 5.0 A
I
F
= 10 A
I
F
= 20 A
Reverse current
Typical junction capacitance
V
R
= 45 V
4.0 V, 1 MHz
T
A
= 25 °C
T
A
= 125 °C
I
R (2)
C
J
T
A
= 125 °C
T
A
= 25 °C
V
F (1)
SYMBOL
TYP.
0.39
0.42
0.48
0.26
0.32
0.40
-
30
2470
MAX.
-
-
0.56
-
-
0.48
5.0
65
-
mA
pF
V
UNIT
Notes
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
(2)
Pulse test: 40 ms pulse width
THERMAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Thermal resistance
Typical thermal resistance
SYMBOL
R
R
R
JA
JL
JL
(1)
(1)
(2)
VSB20L45
55
3.5
2.5
UNIT
°C/W
°C/W
Notes
(1)
Without heatsink, free air; units mounted on PCB with 2 mm x 2 mm copper pad areas at 9.5 mm lead length
(2)
Leads clipped at 3 mm lead length from plastic body on 7.0 cm x 2.2 cm x 1.9 cm x 2 heatsink
IMMUNITY TO ELECTRICAL STATIC DISCHARGE TO THE FOLLOWING STANDARDS
(T
A
= 25 °C unless otherwise noted)
STANDARD
JESD22-A114
JESD22-A115
IEC 61000-4-2
(2)
(1)
TEST TYPE
Human body model (contact mode)
Machine model (contact mode)
Air discharge mode
(1)
TEST CONDITIONS
C = 150 pF, R = 1.5
C = 200 pF, R = 0
C = 150 pF, R = 330
SYMBOL
CLASS
3B
VALUE
> 8 kV
> 400 V
> 15 kV
V
C
C
4
Notes
Immunity to IEC 61000-4-2 air discharge mode has a typical performance > 25 kV
(2)
System ESD standard
ORDERING INFORMATION
(Example)
PREFERRED P/N
VSB20L45-M3/54
VSB20L45-M3/73
UNIT WEIGHT (g)
1.88
1.88
PREFERRED PACKAGE CODE
54
73
BASE QUANTITY
800
300
DELIVERY MODE
13" diameter paper tape and reel
Ammo pack packaging
Revision: 23-Oct-13
Document Number: 89480
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VSB20L45
www.vishay.com
Vishay General Semiconductor
100
RATINGS AND CHARACTERISTICS CURVES
(T
A
= 25 °C unless otherwise noted)
Average Forward Rectified Current (A)
9
8
7
6
5
4
3
2
1
0
0
25
50
75
100
125
150
175
Instantaneous Forward Current (A)
Free air, without Heatsink
T
A
= 150 °C
10
T
A
= 125 °C
T
A
= 100 °C
1
T
A
= 25 °C
0.1
0
0.1
0.2
0.3
0.4
0.5
0.6
Ambient Temperature (°C)
Fig. 1 - Forward Current Derating Curve
120
Instantaneous Forward Voltage (V)
Fig. 4 - Typical Instantaneous Forward Characteristics
1000
100
10
1
0.1
T
A
= 25 °C
0.01
0.001
20
40
60
80
100
T
A
= 150 °C
T
A
= 125 °C
T
A
= 100 °C
100
DC Current with Heatsink
80
60
40
20
0
0
25
50
75
100
125
150
175
200
Instantaneous Reverse Current (mA)
Percentage of Rated Current (%)
Ambient Temperature (°C)
Fig. 2 - Rated Forward Current vs. Ambient Temperature
12.0
10.0
8.0
6.0
4.0
2.0
D = t
p
/T
t
p
Percent of Rated Peak Reverse Voltage (%)
Fig. 5 - Typical Reverse Leakage Characteristics
10 000
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mV
p-p
Average Power Loss (W)
D = 0.5
D = 0.3
D = 0.2
D = 0.1
D = 0.8
D = 1.0
Junction Capacitance (pF)
1000
T
0.0
0
2
4
6
8
10 12 14 16 18 20 22 24
100
0.1
1
10
100
Average Forward Current (A)
Fig. 3 - Forward Power Loss Characteristics
Reverse Voltage (V)
Fig. 6 - Typical Junction Capacitance
Revision: 23-Oct-13
Document Number: 89480
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VSB20L45
www.vishay.com
PACKAGE OUTLINE DIMENSIONS
in inches (millimeters)
P600
Vishay General Semiconductor
1.0 (25.4)
MIN.
0.360 (9.1)
0.340 (8.6)
0.360 (9.1)
0.340 (8.6)
0.052 (1.32)
0.048 (1.22)
DIA.
1.0 (25.4)
MIN.
Revision: 23-Oct-13
Document Number: 89480
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
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Revision: 08-Feb-17
1
Document Number: 91000