VT1080S-E3, VFT1080S-E3, VBT1080S-E3, VIT1080S-E3
www.vishay.com
Vishay General Semiconductor
Ultra Low V
F
= 0.52 V at I
F
= 5 A
FEATURES
Trench MOS Barrier Schottky Rectifier
TMBS
TO-220AB
®
• Trench MOS Schottky technology
ITO-220AB
• Low forward voltage drop, low power losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C (for TO-263AB package)
• Solder bath temperature 275 °C maximum, 10 s,
per JESD 22-B106 (for TO-220AB, ITO-220AB,
and TO-262AA package)
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
2
1
VT1080S
PIN 1
PIN 2
CASE
3
1
VFT1080S
PIN 1
PIN 2
2
3
PIN 3
PIN 3
TYPICAL APPLICATIONS
TO-262AA
TO-263AB
K
K
For use in high frequency converters, switching power
supplies, freewheeling diodes, OR-ing diode, DC/DC
converters and reverse battery protection.
MECHANICAL DATA
A
NC
1
VBT1080S
NC
A
K
HEATSINK
2
3
Case:
TO-220AB,
ITO-220AB,
TO-263AB
and
TO-262AA
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Terminals:
matte tin plated leads, solderable
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity:
as marked
Mounting Torque:
10 in-lbs maximum
per
VIT1080S
PIN 1
PIN 2
K
PIN 3
PRIMARY CHARACTERISTICS
I
F(AV)
V
RRM
I
FSM
V
F
at I
F
= 10 A
T
J
max.
Package
Circuit configuration
10 A
80 V
100 A
0.60 V
150 °C
TO-220AB, ITO-220AB,
TO-263AB, TO-262AA
Single
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum average forward rectified current (fig. 1)
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
Non-repetitive avalanche energy at T
J
= 25 °C, L = 60 mH
Peak repetitive reverse current at t
p
= 2 μs, 1 kHz, T
J
= 38 °C ± 2 °C
Isolation voltage (ITO-220AB only) from terminal to heatsink, t = 1 min
Operating junction and storage temperature range
SYMBOL
V
RRM
I
F(AV)
I
FSM
E
AS
I
RRM
V
AC
T
J
, T
STG
VT1080S
VFT1080S VBT1080S
80
10
100
110
1.0
1500
-55 to +150
VIT1080S
UNIT
V
A
A
mJ
A
V
°C
Revision: 16-Mar-18
Document Number: 89165
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VT1080S-E3, VFT1080S-E3, VBT1080S-E3, VIT1080S-E3
www.vishay.com
Vishay General Semiconductor
TEST CONDITIONS
SYMBOL
V
BR
TYP.
80 (minimum)
0.57
V
F (1)
T
A
= 125 °C
T
A
= 25 °C
T
A
= 125 °C
I
R (2)
0.67
0.52
0.60
20
10
MAX.
-
-
0.81
-
0.70
600
20
μA
mA
V
UNIT
V
ELECTRICAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Breakdown voltage
I
R
= 10 mA
I
F
= 5 A
Instantaneous forward voltage
I
F
= 10 A
I
F
= 5 A
I
F
= 10 A
Reverse current
V
R
= 80 V
T
A
= 25 °C
T
A
= 25 °C
Notes
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
(2)
Pulse test: Pulse width
40 ms
THERMAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Typical thermal resistance
SYMBOL
R
JC
VT1080S
2.2
VFT1080S
5.5
VBT1080S
2.2
VIT1080S
2.2
UNIT
°C/W
ORDERING INFORMATION
(Example)
PACKAGE
TO-220AB
ITO-220AB
TO-263AB
TO-263AB
TO-262AA
PREFERRED P/N
VT1080S-E3/4W
VFT1080S-E3/4W
VBT1080S-E3/4W
VBT1080S-E3/8W
VIT1080S-E3/4W
UNIT WEIGHT (g)
1.88
1.73
1.36
1.36
1.43
PACKAGE CODE
4W
4W
4W
8W
4W
BASE QUANTITY
50/tube
50/tube
50/tube
800/reel
50/tube
DELIVERY MODE
Tube
Tube
Tube
Tape and reel
Tube
Revision: 16-Mar-18
Document Number: 89165
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VT1080S-E3, VFT1080S-E3, VBT1080S-E3, VIT1080S-E3
www.vishay.com
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES
(T
A
= 25 °C unless otherwise noted)
100
T
A
= 150 °C
10
T
A
= 125 °C
T
A
= 100 °C
Average Forward Current (A)
Resistive or Inductive Load
10
8
VFT1080S
6
4
2
0
0
25
50
75
100
V(B,I)T1080S
Instantaneous Reverse Current (mA)
12
1
0.1
0.01
T
A
= 25 °C
125
150
175
0.001
20
30
40
50
60
70
80
90
100
Case Temperature (°C)
Fig. 1 - Maximum Forward Current Derating Curve
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Characteristics
8
7
D = 0.5
D = 0.3
D = 0.2
D = 0.1
D = 1.0
D = 0.8
10 000
6
5
4
3
2
1
0
0
2
Junction Capacitance (pF)
Average Power Loss (W)
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mV
p-p
1000
T
100
D = t
p
/T
4
6
8
t
p
10
12
10
0.1
1
10
100
Average Forward Current (A)
Fig. 2 - Forward Power Loss Characteristics
Reverse Voltage (V)
Fig. 5 - Typical Junction Capacitance
Transient Thermal Impedance (°C/W)
100
10
Junction to Case
VFT1080S
V(B,I)T1080S
Instantaneous Forward Current (A)
T
A
= 150 °C
10
T
A
= 125 °C
1
1
T
A
= 100 °C
T
A
= 25 °C
0.1
0
0.2
0.4
0.6
0.8
1.0
1.2
0.1
0.01
0.1
1
10
100
Instantaneous Forward Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics
t - Pulse Duration (s)
Fig. 6 - Typical Transient Thermal Impedance
Revision: 16-Mar-18
Document Number: 89165
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VT1080S-E3, VFT1080S-E3, VBT1080S-E3, VIT1080S-E3
www.vishay.com
PACKAGE OUTLINE DIMENSIONS
in inches (millimeters)
Vishay General Semiconductor
TO-220AB
0.415 (10.54)
0.380 (9.65)
0.161 (4.08)
0.139 (3.53)
0.113 (2.87)
0.103 (2.62)
0.185 (4.70)
0.175 (4.44)
0.055 (1.39)
0.045 (1.14)
1
0.160 (4.06)
0.140 (3.56)
0.057 (1.45)
0.045 (1.14)
PIN
2
0.635 (16.13)
0.625 (15.87)
3
0.603 (15.32)
0.573 (14.55)
0.350 (8.89)
0.330 (8.38)
1.148 (29.16)
1.118 (28.40)
0.110 (2.79)
0.100 (2.54)
0.560 (14.22)
0.530 (13.46)
0.104 (2.65)
0.096 (2.45)
0.035 (0.90)
0.028 (0.70)
0.205 (5.20)
0.195 (4.95)
0.022 (0.56)
0.014 (0.36)
Revision: 16-Mar-18
Document Number: 89165
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VT1080S-E3, VFT1080S-E3, VBT1080S-E3, VIT1080S-E3
www.vishay.com
Vishay General Semiconductor
TO-262AA
0.411 (10.45)
0.380 (9.65)
0.185 (4.70)
0.175 (4.44)
0.055 (1.40)
0.045 (1.14)
0.055 (1.40)
0.047 (1.19)
0.950 (24.13)
0.920 (23.37)
0.160 (4.06)
0.140 (3.56)
0.057 (1.45)
0.045 (1.14)
1
PIN
2 3
0.350 (8.89)
0.330 (8.38)
0.510 (12.95)
0.470 (11.94)
0.401 (10.19)
0.381 (9.68)
0.110 (2.79)
0.100 (2.54)
0.560 (14.22)
0.530 (13.46)
0.104 (2.65)
0.096 (2.45)
0.035 (0.90)
0.028 (0.70)
0.205 (5.20)
0.195 (4.95)
0.022 (0.56)
0.014 (0.35)
D
2
PAK (TO-263AB)
0.411 (10.45)
0.380 (9.65)
0.245 (6.22)
MIN.
K
0.360 (9.14)
0.320 (8.13)
NC
K
A
0.055 (1.40)
0.047 (1.19)
0.190 (4.83)
0.160 (4.06)
0.055 (1.40)
0.045 (1.14)
Mounting Pad Layout
0.42 (10.66) MIN.
0.33 (8.38) MIN.
0.624 (15.85)
0.591 (15.00)
0.670 (17.02)
0.591 (15.00)
0.15 (3.81) MIN.
0.08 (2.032) MIN.
0.105 (2.67)
0.095 (2.41)
0.037 (0.940)
0.027 (0.686)
0.105 (2.67)
0.095 (2.41)
0 to 0.01 (0 to 0.254)
0.110 (2.79)
0.090 (2.29)
0.021 (0.53)
0.014 (0.36)
0.205 (5.20)
0.195 (4.95)
0.140 (3.56)
0.110 (2.79)
Revision: 16-Mar-18
Document Number: 89165
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
