CTLDM7003T-M563D
SURFACE MOUNT
DUAL, N-CHANNEL
ENHANCEMENT-MODE
SILICON MOSFETS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CTLDM7003T-
M563D is a Dual N-channel MOSFET packaged in
a space saving 1.6 x 1.6mm TLM™ surface mount
package. This device is a TLM™ equivalent of the
popular CMLDM7003T, SOT-563 device, featuring
enhanced thermal characteristics, a package footprint
compatible with standard SOT-563 mounting pad
geometries, and a height profile of only 0.4mm.
MARKING CODE: CJA
FEATURES:
• ESD protection up to 2kV
• Dual MOSFETs
• Low rDS(ON) (1.6Ω TYP @ VGS=1.8V)
• TLM563D with a package profile of 0.4mm, compatible with
SOT-563 mounting geometries
SYMBOL
VDS
VDG
VGS
ID
IDM
PD
TJ, Tstg
Θ
JA
50
50
12
280
1.5
350
-65 to +150
357
UNITS
V
V
V
mA
A
mW
°C
°C/W
UNITS
nA
μA
μA
nA
V
1.2
1.4
1.6
1.3
1.1
200
5.0
50
25
2.3
1.9
1.5
V
V
Ω
Ω
Ω
mS
pF
pF
pF
TLM563D CASE
• Device is
Halogen Free
by design
APPLICATIONS:
• Load Power Switches
• DC/DC Converters
• Battery powered devices including Cell Phones,
PDAs, Digital Cameras, MP3 Players, etc.
MAXIMUM RATINGS:
(TA=25°C)
Drain-Source Voltage
Drain-Gate Voltage
Gate-Source Voltage
Continuous Drain Current
Maximum Pulsed Drain Current
Power Dissipation (Note 1)
Operating and Storage Junction Temperature
Thermal Resistance (Note 1)
ELECTRICAL CHARACTERISTICS PER TRANSISTOR:
(TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
IGSSF, IGSSR
VGS=5.0V, VDS=0
50
IGSSF, IGSSR
IGSSF, IGSSR
IDSS
BVDSS
VGS(th)
VSD
rDS(ON)
rDS(ON)
rDS(ON)
gFS
Crss
Ciss
Coss
VGS=10V, VDS=0
VGS=12V, VDS=0
VDS=50V, VGS=0
VGS=0, ID=10μA
VDS=10V, ID=250μA
VGS=0, IS=115mA
VGS=1.8V, ID=50mA
VGS=2.5V, ID=50mA
VGS=5.0V, ID=50mA
VDS=10V, ID=200mA
VDS=25V, VGS=0, f=1.0MHz
VDS=25V, VGS=0, f=1.0MHz
VDS=25V, VGS=0, f=1.0MHz
50
0.75
0.5
1.0
50
Notes: (1) Mounted on 2 inch square FR4 PCB with copper mounting pad area of 1.8mm
2
.
R1 (17-February 2010)
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