BL
GALAXY ELECTRICAL
SMTPAxxx
BREAKDOWN VOLTAGE: 62 --- 270 V
PEAK PULSE POWER: 5000 W
SMB
4.5± 0.15
TELECOMMUNICATION PROTECTION
FEATURES
Bidirectional crowbar protection
Voltage range from 62V to 270V
Low capacitance from 15pF to 30pF typ.@50V
Low leakage current: I
R
=2μA max
Holding current: I
H
=150mA min
2.0± 0.15
Repetitive peak pulse current:
I
PP
=50A,10/1000μs.
DESCRIPTION
The SMTPAxxx series has been designed to protect
telecommunication equipment against lightning and
transient induced by AC power lines.The package/die
size ratio has been optimized by using the SMB package.
2.3± 0.15
5.
3±
0.2
1.25± 0.2
0.203MAX
SCHEMATIC DIAGRAM
Dimensions in millimeters
Complies
with the
following standards:
GR-1089 Core first level
GR-1089 Core second level
GR-1089 Core Intra-building
ITU-T-K20/K21
ITU-T-K20 (IEC61000-4-2)
VDE0433
VDE0878
IEC-1000-4-5
FCCPart68,lightning surgetypeA
FCCPart68,lightning surgetypeB
Peak
surge
voltage
(V)
2500
1000
5000
1500
6000
1500
6000
8000
4000
2000
4000
2000
4000
4000
1500
800
1000
Voltage
waveform
( s)
2/10
10/1000
2/10
2/10
10/700
1/60 ns
0
1.2/50
10/700
1.2/50
10/160
10/560
9/720
Current
waveform
( s)
2/10
10/1000
2/10
2/10
5/310
Required
Necessary
peak current
resistor
(A)
( )
500
100
500
100
150
37.5
12
10
24
0
53
0
0
0
21.5
0
0
0
21.5
0
12.5
6.5
0
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ESD contact discharge
ESD air discharge
5/310
1/20
5/310
8/20
10/160
10/560
5/320
100
50
100
50
100
100
200
100
25
Document Number 0286002
BL
GALAXY ELECTRICAL
3.5± 0.2
0.2± 0.05
1.
BL
Symbol
Ipp
I
FS
I
FSM
GALAXY ELECTRICAL
)
Parameter
SMTPAxxx
Value
10/1000 s
8/20μs
10/560μs
5/310μs
10/160μs
1/20μs
2/10μs
8/20μs
t=20m s
t=16.6m s
t=0.2s
t=2s
t=16.6m s
t=20m s
Maxim um
50
100
55
65
75
100
150
2.5
30
32
17
9
8.5
9
-55to+150
150
260
Value
20
100
STATIC
V
BO
@ I
BO
I
H
C
ABSOLUTE MAXIMUM RATINGS (T
A
=25
Repetitive peak puls e current
Unit
A
Fail safe m ode: m axim um current
Non repetitive s urge peak on-s tate current (Sinus oidal)
kA
A
I
2
t
T
stg
T
j
T
L
Symbol
R
th
(j-l)
R
th
(j-a)
I
2
t vallue for fusing
Storage tem perature range
junction tem perature
Storage tem perature range Maxim um junction tem perature
Parameter
Junction to leads
Junction to am bient with recom m ended footprint
I
RM
@ V
RM
I
R
@ V
R
DYNAMIC V
BO
@ I
BO
A
2
s
THERMAL RESISTANCES
Unlt
/W
/W
C
Type
Device
Marking
Code
T62
T68
T100
T120
T130
T180
T200
T220
T240
T270
I
I
PP
max.
max.
μA
V
56
61
90
108
117
162
180
198
216
243
mA
V
62
68
100
120
130
180
200
220
240
270
max.
Note1
V
mA
85
93
135
160
173
235
262
285
300
350
max.
Note2
V
mA
82
90
133
160
173
240
267
293
320
360
min.
Note3
mA
150
150
150
150
150
150
150
150
150
150
typ.
typ.
Note4 Note5
pF
pF
30
30
20
20
20
15
15
15
15
15
50
45
40
40
35
30
30
30
30
30
SMTPA62
SMTPA68
SMTPA100
SMTPA120
SMTPA130
SMTPA180
SMTPA200
SMTPA220
SMTPA240
SMTPA270
2
1.0
800
800
ELECTRICAL CHARACTERISTICS (T
A
=25
Symbol
V
RM
I
RM
V
R
V
BR
V
BO
I
H
I
BO
I
PP
C
Parameter
Stand-off voltage
Leakage current at stand-off voltage
Continuous
reverse
voltage
Breakdown voltage
Break over voltage
Holding current
Break over current
Peak pulse current
Capacitance
)
I
BO
I
H
I
R
I
RM
V
RM
V
BR
V
BO
V
Note2: See test circuit2.
Note4: V
R
=50V bias, V
RMS
=1V, F=1MHz.
Note
1
: See functional break over voltage test circuit 1.
Note3: See f unctional holding current test circuit 3.
Note5: V
R
=2V bias, V
RMS
=1V, F=1MHz.
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Document Number 0286002
BL
GALAXY ELECTRICAL
2.
RATINGS AND CHARACTERISTIC CURVES
TEST CIRCUIT 1 FOR DYNAMIC I
BO
AND V
BO
PARAMETERS:
100V/μs, di/dt<10A/μs, Ipp=50A
SMTPAxxx
2
Ω
U
10
μ
F
45
Ω
66
Ω
47
Ω
83
Ω
0.36nF
46
μ
H
KEY TEK 'SYSTEM 2' GENERATOR WITH PN2461 MODULE
1kV/μs, di/dt<10A/μs, Ipp=10A
26
μ
H
U
60
μ
F
12
Ω
250
Ω
47
Ω
46
μ
H
KEY TEK 'SYSTEM 2' GENERATOR WITH PN2461 MODULE
TEST CIRCUIT 2 FOR I
BO
AND V
BO
PARAMETERS:
tp=20ms
R1
140
R2
240
220V 50Hz
k
V
BO
measurement
Vout
I
BO
measurement
D.U.T
1/4
TEST PROCEDURE :
Pulse Test duration (tp = 20ms):
- For Bidirectional devices = Sw itch K is closed
- For Unidirectional devices = Sw itch K is open.
V
OUT
Selection
- Device w ith V
BO
< 200 Volt
- V
OUT
= 250 V
RMS
, R1 = 140
Ω.
- Device w ith V
BO
200 Volt
- V
OUT
= 480 V
RMS
, R2 = 240Ω.
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Document Number 0286002
BL
GALAXY ELECTRICAL
3.
RATINGS AND CHARACTERISTIC CURVES
TEST CIRCUIT 3 FOR I
H
PARAMETERS:
SMTPAxxx
R
V
BAT
=-48V
D.U.T.
Surge generator
This is a GO-NO GO Test w hich allow s to confirm the holding current (I
H
) level in a functional test circuit.
TESTPROCEDURE :
1) Adjust the current level at the IH value by short circuiting the AK of the D.U.T.
2) Fire the D.U.T w ith a surge
current
: Ipp = 10A , 10/1000 ms.
3) The D.U.T w ill come back off-state w ithin 50ms max.
PACKAGE MECHANICAL DATA
SMB(JEDEC DO-214AA)
E1
DIMENSIONS
REF.
D
MILLIMETERS
MIN.
MAX.
2.45
0.2
2.2
0.41
5.6
4.6
3.95
1.6
1.9
0.05
1.95
0.15
5.1
4.05
3.3
0.75
INCHES
MIN.
0.075
0.002
0.077
0.006
0.201
0.159
0.13
0.03
MAX.
0.096
0.008
0.087
0.016
0.22
0.181
0.156
0.063
A1
A2
b
c
E
E1
A2
b
A1
E
C
L
D
L
FOOT PRINT in millimeters (inches)
1.52(0.059)
2.75(0.108)
1.52(0.059)
2.3(0.09)
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Document Number 0286002
BL
GALAXY ELECTRICAL
4.
RATINGS AND CHARACTERISTIC CURVES
ORDER CODE
SMTPAxxx
SM TPA
SURFACE MOUNT
xx
VOLTAGE
TRISIL
TM
PROTECTION:
Ipp=50A
ORDERING INFORMATION
part number
SMTPA62
SMTPA68
SMTPA100
SMTPA120
SMTPA130
SMTPA180
SMTPA200
SMTPA220
SMTPA240
SMTPA270
marking
U01
U05
U13
U17
U19
U25
U27
U31
U35
U39
package
weight
base
QTY
delivery mode
SMB
0.11g
5000
tape
&
reel
FIG.1 -- NON REPETITIVE SURGE PEAK ON-STATE
CURRENT VERSUS OVERLOAD DURATION
FIG.2 -- ON-STATE VOLTAGE VERSUS ON-STATE
CURRENT (TYPICAL VALUES).
IT(A)
ITSM(A)
40
35
30
25
20
15
10
5
0
1E-2
1E-1
t(s)
F=50Hz
50
20
10
5
2
1
1E+0
1E+1
1E+2
1E+3
VT(V)
1
2
3
4
5
6
7
8
9
10
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Document Number 0286002
BL
GALAXY ELECTRICAL
5.
嵌入式系统
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