Data Sheet
Switching Diode
UMN20N
lApplications
General switching
lDimensions
(Unit : mm)
lLand
size figure
(Unit : mm)
0.65
0.25±
0.1
0.05
0.65
2.0±0.2
各リードとも
Each lead has same dimension
同寸法
(5)
(4)
0.15±0.05
1.25±0.1
2.1±0.1
lFeatures
1)Small mold type. (UMD6)
2)Low leakage
(6)
0.9
0.35
0½0.1
0.1Min
(1)
(2)
0.65
(3)
UMD6
lConstruction
Silicon epitaxial planer
0.65
1.3±0.1
0.7
0.9±0.1
lStructure
ROHM : UMD6
JEDEC : SOT-363
JEITA : SC-88
dot (year week factory)
lTaping
dimensions
(Unit : mm)
lAbsolute
maximum ratings
(Ta=25C)
Parameter
Symbol
V
RM
Reverse voltage (repetitive peak)
V
R
Reverse voltage (DC)
I
FM
Forward current (repetitive peak)
Average rectified forward current
Io
I
surge
Surge current (t=1sec)
Junction temperature
Tj
Storage temperature
Tstg
Limits
40
35
225
100
400
150
-55
to
+150
Unit
V
V
mA
mA
mA
C
C
lElectrical
characteristics
(Ta=25C)
Parameter
Symbol
V
F
Forward voltage
Reverse current
Capacitance between terminals
I
R
Ct
Min.
-
-
-
Typ.
-
-
-
Max.
1.2
0.01
5.0
Unit
V
μA
pF
I
F
=100mA
Conditions
V
R
=20V
V
R
=0.5V , f=1.0MHz
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© 2011 ROHM Co., Ltd. All rights reserved.
1/4
2011.10 - Rev.A
1.6
UMN20N
Data Sheet
1
100
Tj=150°C
REVERSE CURRENT:I
R
(nA)
Tj=150°C
10
Tj=125°C
1
Tj=75°C
0.1
FORWARD CURRENT:I
F
(A)
0.1
0.01
Tj=125°C
Tj=75°C
0.001
Tj=25°C
0.0001
0
0.5
1
1.5
FORWARD VOLTAGE：V
F
(V)
V
F
-I
F
CHARACTERISTICS
0.01
Tj=25°C
0.001
0
5
10
15
20
25
30
35
40
REVERSE VOLTAGE：V
R
(V)
V
R
-I
R
CHARACTERISTICS
4
f=1MHz
980
975
FORWARD VOLTAGE:V
F
(mV)
Tj=25°C
I
F
=100mA
n=50pcs
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
970
965
960
955
950
945
940
935
AVE.:950mV
3
2
1
0
0
10
20
30
REVERSE VOLTAGE:V
R
(V)
V
R
-Ct CHARACTERISTICS
930
V
F
DISPERSION MAP
50
Tj=25°C
V
R
=20V
n=30pcs
5
Ta=25°C
f=1MHz
V
R
=0.5V
n=30pcs
REVERSE CURRENT:I
R
(pA)
30
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
40
4
3
20
2
AVE.:4.3pA
10
AVE.:2.16pF
1
0
I
R
DISPERSION MAP
0
Ct DISPERSION MAP
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© 2011 ROHM Co., Ltd. All rights reserved.
2/4
2011.10 - Rev.A
UMN20N
Data Sheet
10
9
I
FSM
PEAK SURGE
FORWARD CURRENT:I
FSM
(A)
8
7
6
5
4
3
2
1
0
I
FSM
DISPERSION MAP
AVE.:4.0A
8.3ms
1cyc
REVERSE RECOVERY TIME:trr(us)
0.45
Tj=25°C
I
F
=0.1A
I
R
=0.1A
Irr=0.1×I
R
n=10pcs
0.4
AVE:0.391us
0.35
0.3
trr DISPERSION MAP
5
4.5
PEAK SURGE
FORWARD CURRENT:I
FSM
(A)
4
3.5
3
2.5
2
1.5
1
0.5
0
1
10
NUMBER OF CYCLES
I
FSM
-CYCLE CHARACTERISTICS
100
I
FSM
6
5
PEAK SURGE
FORWARD CURRENT:I
FSM
(A)
8.3ms 8.3ms
1cyc.
I
FSM
time
4
3
2
1
0
1
10
TIME:t(ms)
I
FSM
-t CHARACTERISTICS
100
7
1000
Rth(j-a)
AVE:5.83kV
TRANSIENT
THERMAL IMPEDANCE:Rth (°C/W)
6
ELECTROSTATIC
DISCHARGE TEST ESD(KV)
5
4
AVE:2.30kV
100
Rth(j-c)
3
2
10
1
0
C=200pF
R=0Ω
C=150pF
R=330Ω
1
0.001
0.01
0.1
1
10
100
1000
ESD DISPERSION MAP
TIME:t(s)
Rth-t CHARACTERISTICS
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© 2011 ROHM Co., Ltd. All rights reserved.
3/4
2011.10 - Rev.A
UMN20N
Data Sheet
0.16
0.14
0.12
FORWARD POWER
DISSIPATION:Pf(W)
0.1
0.08
0.06
0.04
D.C.
1.0E-06
8.0E-07
D=1/2
Sin(θ＝180)
REVERSE POWER
DISSIPATION:P
R
(W)
6.0E-07
D=1/2
4.0E-07
Sin(θ＝180)
2.0E-07
0.02
0
0
0.05
0.1
0.15
0.2
AVERAGE RECTIFIED
FORWARD CURRENT：Io(A)
Io-Pf CHARACTERISTICS
0A
0.2
0V
t
D.C.
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
T
Io
V
R
D=t/T
V
R
=20V
Tj=150°C
0.0E+00
0
10
20
30
40
REVERSE VOLTAGE:V
R
(V)
V
R
-P
R
CHARACTERISTICS
D.C.
D=1/2
0.1
Sin(θ＝180)
0
0
25
50
75
100
125
150
CASE TEMPERATURE:Tc(°C)
DERATING CURVE (Io-Tc)
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© 2011 ROHM Co., Ltd. All rights reserved.
4/4
2011.10 - Rev.A
Notice
Notes
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