SBP13007-K
High Voltage Fast-Switching NPN Power Transistor
igh olt
-Swi
NPN
ran tor
Features
eat
◆
Very High Switching Speed
◆
High Voltage Capability
◆
Wide Reverse Bias SOA
B
General Description
scrip
ript
This device is designed for high voltage, High speed
switching characteristics required such as lighting
system ,switching mode power supply.
C
E
TO220
Absolute Maximum Ratings
imu
ing
Symbol
V
CES
V
CEO
V
EBO
I
C
I
CP
I
B
I
BM
P
C
T
J
T
STG
Parameter
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector pulse Current
Base Current
Base Peak Current
Total Dissipation at Tc = 25℃
Total Dissipation at Ta = 25℃
Operation Junction Temperature
Storage Temperature
t
P
= 5ms
Test Conditions
V
BE
= 0
I
B
= 0
I
C
= 0
Value
700
400
9.0
8.0
16
4.0
8.0
80
2.05
- 40 ~ 150
- 40 ~ 150
Units
V
V
V
A
A
A
A
W
℃
℃
Tc: Case temperature (good cooling)
Ta:Ambient temperature (without heat sink)
Thermal Characteristics
Symbol
R
θJc
R
θJA
Parameter
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
Value
1.56
62.5
Units
℃/W
℃/W
Rev.A Jun.2011
Copyright@WinSemi Semiconductor Co.,Ltd.,All rights reserved.
T01-3
SBP13007-K
Electrical Characteristics
(T
C
=25
℃
unless otherwise noted)
ectr
tri
Cha act ristics
Value
Parameter
Test Conditions
Min
400
Typ
-
Max
-
1.0
-
-
1.5
2.0
-
-
2.5
1.2
1.6
1.5
1.0
5.0
40
40
V
V
Symbol
V
CEO(sus)
Units
V
Collector-Emitter Breakdown Voltage Ic=10mA,Ib=0
Ic=2.0A,Ib=0.4A
Ic=5.0A,Ib=1.0A
V
CE(sat)
Collector-Emitter Saturation Voltage
Ic=8.0A,Ib=2.0A
Ic=5.0A,Ib=1.0A
Tc=100℃
Ic=2.0A,Ib=0.4A
-
-
V
V
BE(sat)
Base-Emitter Saturation Voltage
Ic=5.0A,Ib=1.0A
Ic=5.0A,Ib=1.0A
Tc=100℃
-
-
V
I
CBO
Collector-Base Cutoff Current
(Vbe=-1.5V)
DC Current Gain
Resistive Load
Vcb=700V
Vcb=700V, Tc=100℃
Vce=5V,Ic=2.0A
Vce=5V, Ic=5.0A
V
CC
=125V ,
I
B1
=1.0A ,
Tp=25㎲
Ic=5.0A
I
B2
=-1.0A
-
8
5
-
-
-
-
mA
h
FE
ts
tf
Storage Time
Fall Time
Inductive Load
1.5
0.17
3.0
0.4
㎲
ts
tf
Storage Time
Fall Time
Inductive Load
V
CC
=15V ,Ic=5A
I
B1
=1.0A , I
B2
=-2.5A
L=0.35mH,V
clamp
=300V
V
CC
=15V ,Ic=1A
I
B1
=0.4A , I
B2
=-1.0A
L=0.35mH,Vclamp=300V
Tc=100℃
-
-
0.8
0.06
2.0
0.12
㎲
ts
tf
Storage Time
Fall Time
-
-
1.0
0.07
3.0
0.15
㎲
Note:
Note
Pulse Test : Pulse width 300, Duty cycle 2%
2/5
Copyright@WinSemi Semiconductor Co.,Ltd.,All rights reserved.
SBP13007-K
Fig. 1 DC Current Gain
Fig. 2 Collector-Emitter Saturation Voltage
Fig. 3 Base--Emitter Saturation Voltage
Fig. 4 Safe Operation Area
Fig.5 Power Derating
Fig.6 Reverse Biased Safe Operation Area
3/5
Copyright@WinSemi Semiconductor Co.,Ltd.,All rights reserved.
SBP13007-K
Resistive Load Switching Test Circuit
oad
tchi
cui
Inductive Load Switching & RBSOA Test Circuit
duct
ctive
tch
Circu
rcuit
4/5
Copyright@WinSemi Semiconductor Co.,Ltd.,All rights reserved.
SBP13007-K
TO-220 Package Dimension
O-220 ackag Dim
Unit:mm
Unit:
5/5
Copyright@WinSemi Semiconductor Co.,Ltd.,All rights reserved.
MEMS传感器
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