SEMICONDUCTOR
TECHNICAL DATA
Voltage regulation and voltage limiting.
Voltage surge absorption.
FEATURES
・Small
surface mounting type.
SMAZ3.6V~SMAZ36V
ZENER DIODE
SILICON PLANAR DIODE
2
H
A
D
1
MAXIMUM RATING (Ta=25℃)
CHARACTERISTIC
Power Dissipation
Junction Temperature
Storage Temperature Range
SYMBOL
P
D
T
j
T
stg
RATING
1
150
-55½150
UNIT
C
B
℃
G
℃
1. ANODE
2. CATHODE
SMA
Marking
Type Name
Lot No.
Type No.
SMAZ3.6V
SMAZ3.9V
SMAZ4.3V
SMAZ4.7V
SMAZ5.1V
SMAZ5.6V
SMAZ6.2V
SMAZ6.8V
SMAZ7.5V
Mark
Z3.6
Z3.9
Z4.3
Z4.7
Z5.1
Z5.6
Z6.2
Z6.8
Z7.5
Type No.
SMAZ8.2V
SMAZ9.1V
SMAZ10V
SMAZ11V
SMAZ12V
SMAZ13V
SMAZ15V
SMAZ16V
SMAZ18V
Mark
Z8.2
Z9.1
Z10
Z11
Z12
Z13
Z15
Z16
Z18
Type No.
SMAZ20V
SMAZ22V
SMAZ24V
SMAZ27V
SMAZ30V
SMAZ33V
SMAZ36V
-
-
F
W
DIM
A
B
C
D
E
F
G
H
MILLIMETERS
_
4.5 + 0.2
_
2.6 + 0.2
_
1.5 + 0.2
_
5.0 + 0.3
_
1.2 + 0.3
_
2.0 + 0.2
0 ~ 0.15
R 0.5
Mark
Z20
Z22
Z24
Z27
Z30
Z33
Z36
-
-
2005. 8. 16
Revision No : 0
E
E
1/3
SMAZ3.6V~SMAZ36V
ELECTRICAL CHARACTERISTICS (Ta=25℃)
Zener Voltage Vz (V)
TYPE No.
Min.
SMAZ3.6V
SMAZ3.9V
SMAZ4.3V
SMAZ4.7V
SMAZ5.1V
SMAZ5.6V
SMAZ6.2V
SMAZ6.8V
SMAZ7.5V
SMAZ8.2V
SMAZ9.1V
SMAZ10V
SMAZ11V
SMAZ12V
SMAZ13V
SMAZ15V
SMAZ16V
SMAZ18V
SMAZ20V
SMAZ22V
SMAZ24V
SMAZ27V
SMAZ30V
SMAZ33V
SMAZ36V
3.6
3.9
4.3
4.7
5.1
5.6
6.2
6.8
7.5
8.2
9.1
10.0
11.0
12.0
13.3
14.7
16.2
18.0
20.0
22.0
24.0
27.0
30.0
33.0
36.0
Max.
4.0
4.4
4.8
5.2
5.7
6.3
7.0
7.7
8.4
9.3
10.2
11.2
12.3
13.5
15.0
16.5
18.3
20.3
22.4
24.5
27.6
30.8
34.0
37.0
40.0
Iz
(mA)
40
40
40
40
40
40
40
40
40
40
40
40
20
20
20
20
20
20
20
10
10
10
10
10
10
Max.
15
15
15
10
8
8
6
6
4
4
6
6
8
8
10
10
12
12
14
14
16
16
18
18
20
I
Z
(mA)
40
40
40
40
40
40
40
40
40
40
40
40
20
20
20
20
20
20
20
10
10
10
10
10
10
Dynamic Impedance
Zz (Ω)
Reverse Current
I
R
(μ
A)
Max.
20
20
20
20
20
20
20
20
20
20
20
10
10
10
10
10
10
10
10
10
10
10
10
10
10
V
R
(V)
1.0
1.0
1.0
1.0
1.0
1.5
3.0
3.5
4.0
5.0
6.0
7.0
8.0
9.0
10.0
11.0
12.0
13.0
15.0
17.0
19.0
21.0
23.0
25.0
27.0
(Note 1) The Zener voltage is measured 40ms after power is supplied.
(Note 2) The Dynamic Impedance(Z
Z
) are measured by superimposing a minute altemating current on the regulated current(I
Z
).
2005. 8. 16
Revision No : 0
2/3
SMAZ3.6V~SMAZ36V
Pd - Ta
POWER DISSIPATION P
d
(mW)
1200
Glass epoxy substrate 32X30X1.6(mm)
1000
800
600
400
200
0
0
25
50
87.5
Ceramic substrate
82X30X1.0(mm)
Individual part
(not mounted)
100
150
200
AMBIENT TEMPERATURE Ta ( C)
I
Z
- V
Z
3.6
3.9
4.3
4.7
5.1
5.6
6.2
6.8
7.5
8.2
9.1
10
27
24
30
100m
33
ZENER CURRENT I
Z
(mA)
11
12
13
15
10m
1m
100
µ
10
µ
1
µ
0
16
18
5
10
15
20
20
22
25
30
35
36
40
ZENER VOLTAGE V
Z
(V)
2005. 8. 16
Revision No : 0
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