Power Field-Effect Transistor, 11A I(D), 100V, 0.35ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA, TO-257AA, 3 PIN
| 参数名称 | 属性值 |
| Objectid | 2053606721 |
| 零件包装代码 | TO-257AA |
| 包装说明 | TO-257AA, 3 PIN |
| 针数 | 3 |
| Reach Compliance Code | compliant |
| ECCN代码 | EAR99 |
| 外壳连接 | ISOLATED |
| 配置 | SINGLE WITH BUILT-IN DIODE |
| 最小漏源击穿电压 | 100 V |
| 最大漏极电流 (ID) | 11 A |
| 最大漏源导通电阻 | 0.35 Ω |
| FET 技术 | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95代码 | TO-257AA |
| JESD-30 代码 | R-XSFM-P3 |
| 元件数量 | 1 |
| 端子数量 | 3 |
| 工作模式 | ENHANCEMENT MODE |
| 封装主体材料 | UNSPECIFIED |
| 封装形状 | RECTANGULAR |
| 封装形式 | FLANGE MOUNT |
| 极性/信道类型 | P-CHANNEL |
| 认证状态 | Qualified |
| 参考标准 | MIL-19500/615 |
| 表面贴装 | NO |
| 端子形式 | PIN/PEG |
| 端子位置 | SINGLE |
| 晶体管元件材料 | SILICON |
| JANSM2N7382 | JANSF2N7382 | JANSR2N7382 | JANSD2N7382 | 2N7382 | |
|---|---|---|---|---|---|
| 描述 | Power Field-Effect Transistor, 11A I(D), 100V, 0.35ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA, TO-257AA, 3 PIN | Power Field-Effect Transistor, 11A I(D), 100V, 0.35ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA, TO-257AA, 3 PIN | Power Field-Effect Transistor, 11A I(D), 100V, 0.35ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA, TO-257AA, 3 PIN | Power Field-Effect Transistor, 11A I(D), 100V, 0.35ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA, TO-257AA, 3 PIN | Power Field-Effect Transistor, 11A I(D), 100V, 0.35ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA, TO-257AA, 3 PIN |
| Objectid | 2053606721 | 1814919284 | 2053606725 | 2053606717 | 2053606697 |
| 零件包装代码 | TO-257AA | TO-257AA | TO-257AA | TO-257AA | TO-257AA |
| 包装说明 | TO-257AA, 3 PIN | TO-257AA, 3 PIN | FLANGE MOUNT, R-XSFM-P3 | FLANGE MOUNT, R-XSFM-P3 | FLANGE MOUNT, R-XSFM-P3 |
| 针数 | 3 | 3 | 3 | 3 | 3 |
| Reach Compliance Code | compliant | unknown | compliant | compliant | unknown |
| ECCN代码 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
| 外壳连接 | ISOLATED | ISOLATED | ISOLATED | ISOLATED | ISOLATED |
| 配置 | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
| 最小漏源击穿电压 | 100 V | 100 V | 100 V | 100 V | 100 V |
| 最大漏极电流 (ID) | 11 A | 11 A | 11 A | 11 A | 11 A |
| 最大漏源导通电阻 | 0.35 Ω | 0.35 Ω | 0.35 Ω | 0.35 Ω | 0.35 Ω |
| FET 技术 | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95代码 | TO-257AA | TO-257AA | TO-257AA | TO-257AA | TO-257AA |
| JESD-30 代码 | R-XSFM-P3 | R-XSFM-P3 | R-XSFM-P3 | R-XSFM-P3 | R-XSFM-P3 |
| 元件数量 | 1 | 1 | 1 | 1 | 1 |
| 端子数量 | 3 | 3 | 3 | 3 | 3 |
| 工作模式 | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE |
| 封装主体材料 | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT |
| 极性/信道类型 | P-CHANNEL | P-CHANNEL | P-CHANNEL | P-CHANNEL | P-CHANNEL |
| 认证状态 | Qualified | Qualified | Qualified | Qualified | Not Qualified |
| 表面贴装 | NO | NO | NO | NO | NO |
| 端子形式 | PIN/PEG | PIN/PEG | PIN/PEG | PIN/PEG | PIN/PEG |
| 端子位置 | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
| 晶体管元件材料 | SILICON | SILICON | SILICON | SILICON | SILICON |
| 参考标准 | MIL-19500/615 | MIL-19500/615 | MIL-19500/615 | MIL-19500/615 | - |
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