NL7WB66
Ultra-Small SPST Analog
Switch
The NL7WB66 is a very low R
ON
dual SPST analog switch. R
ON
is
5.0
W
(Typ) at 5.0 V. The device is offered in the very popular low cost
US8 package. It is designed as a general purpose dual switch and can
be used to switch either analog signals such as audio and video or
digital signal such as TTL, CMOS, LVDS, ECL, or complex digital
signals such as QPSK.
Features
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MARKING
DIAGRAM
8
US8
US SUFFIX
CASE 493
1
AJ
M
G
= Device Code
= Date Code*
= Pb−Free Package
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
Excellent Performance RDS
ON
= 5.0
W
at 5.0 V
High Speed Operation: t
PD
= 0.25 ns (Max) at 5.0 V
1.65 to 5.5 V Operating Range
Reduced Threshold Voltages for LVTTL on Control Pin
♦
Eliminates the Need for Translators for Many Applications
♦
TTL Compatibility when V
CC
is 5.0 V
♦
Can Operate with 1.8 V Inputs, if V
CC
is 3.0
♦
Also Meets Full CMOS Specifications
Ultra−Low Charge Injection = 7.5 pC at 5.0 V
Low Stand−by Power I
CC
= 1.0 nA (Max) at T
A
= 25°C
Control Pins IN1, IN2, are Overvoltage Tolerant
Pin for Pin Replacement TC7WB66, NC7WB66, 74LVC2G66
ESD Protection:
Machine Model >200 V,
Human Body Model >2000 V
Latchup Max Rating: 200 mA
This is a Pb−Free Device
8
1
AJ M
G
G
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
PIN ASSIGNMENT
Pin
1
2
3
4
5
6
7
8
Function
NO1
COM1
OE2
GND
NO2
COM2
OE1
V
CC
OVT
−
−
Yes
−
−
−
Yes
−
Typical Applications
Cell Phones
PDAs
Digital Still Cameras
Video
Digital Video
FUNCTION TABLE
NO1
1
2
3
4
8
7
6
5
V
CC
OE1
COM2
NO2
On/Off
Enable Input
L
H
State of
Analog Switch
Off
On
COM1
OE2
GND
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
Figure 1. Pin Assignment Diagram
©
Semiconductor Components Industries, LLC, 2011
August, 2011
−
Rev. 4
1
Publication Order Number:
NL7WB66/D
NL7WB66
MAXIMUM RATINGS
Symbol
V
CC
V
I
V
O
I
IK
I
OK
I
O
I
CC
I
GND
T
STG
T
L
T
J
q
JA
P
D
MSL
F
R
V
ESD
DC Supply Voltage
DC Input Voltage
DC Output Voltage
DC Input Diode Current
DC Output Diode Current
DC Output Sink Current
DC Supply Current per Supply Pin
DC Ground Current per Ground Pin
Storage Temperature Range
Lead Temperature, 1 mm from Case for 10 Seconds
Junction Temperature under Bias
Thermal Resistance
Power Dissipation in Still Air at 85°C
Moisture Sensitivity
Flammability Rating
ESD Withstand Voltage
Oxygen Index: 28 to 34
Human Body Model (Note 2)
Machine Model (Note 3)
Charged Device Model (Note 4)
V
I
< GND
V
O
< GND
Rating
Value
*0.5
to
)7.0
*0.5
to
)7.0
*0.5
to
)7.0
*50
*50
$50
$100
$100
*65
to
)150
260
)150
250
250
Level 1
UL 94 V−0 @ 0.125 in
> 2000
> 200
N/A
Unit
V
V
V
mA
mA
mA
mA
mA
°C
°C
°C
°C/W
mW
−
−
V
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Measured with minimum pad spacing on an FR4 board, using 10 mm−by−1 inch, 2−ounce copper trace with no air flow.
2. Tested to EIA/JESD22−A114−A.
3. Tested to EIA/JESD22−A115−A.
4. Tested to JESD22−C101−A.
RECOMMENDED OPERATING CONDITIONS
Symbol
V
CC
V
IN
V
IO
V
IS
T
A
t
r
, t
f
Positive DC Supply Voltage
Digital Input Voltage (Enable)
Static or Dynamic Voltage Across an Off Switch
Analog Input Voltage
Operating Temperature Range, All Package Types
Input Rise or Fall Time
(Enable Input)
V
CC
= 3.3 V + 0.3 V
V
CC
= 5.0 V + 0.5 V
NO
COM
Characteristics
Min
1.65
GND
GND
GND
−55
0
0
Max
5.5
5.5
V
CC
V
CC
+125
100
20
Unit
V
V
V
V
°C
ns/V
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2
NL7WB66
DEVICE JUNCTION TEMPERATURE VS. TIME TO
0.1% BOND FAILURES
Junction
Temperature
5C
80
90
100
110
120
130
140
Time, Hours
1,032,200
419,300
178,700
79,600
37,000
17,800
8,900
Time, Years
117.8
47.9
20.4
9.4
4.2
2.0
1.0
NORMALIZED FAILURE RATE
FAILURE RATE OF PLASTIC = CERAMIC
UNTIL INTERMETALLICS OCCUR
T
J
= 130°C
T
J
= 120°C
T
J
= 100°C
T
J
= 110°C
T
J
= 90°C
T
J
= 80°C
100
TIME, YEARS
1
1
10
1000
Figure 2. Failure Rate vs. Time Junction Temperature
DC CHARACTERISTICS
−
Digital Section
(Voltages Referenced to GND)
Guaranteed Max Limit
Symbol
V
IH
Parameter
High−level Input Voltage,
Control Input
Condition
V
CC
1.65 to 1.95
2.3 to 2.7
3.0 to 3.6
4.5 to 5.5
1.65 to 1.95
2.3 to 2.7
3.0 to 3.6
4.5 to 5.5
V
IN
= 5.5 V or GND
Enable and VIS = VCC
or GND
0 V to 5.5 V
5.5
255C
V
CC
x 0.65
V
CC
x 0.7
V
CC
x 0.7
V
CC
x 0.7
V
CC
x 0.35
V
CC
x 0.3
V
CC
x 0.3
V
CC
x 0.3
+0.1
1.0
−40
to
855C
V
CC
x 0.65
V
CC
x 0.7
V
CC
x 0.7
V
CC
x 0.7
V
CC
x 0.35
V
CC
x 0.3
V
CC
x 0.3
V
CC
x 0.3
+1.0
1.0
−55
to
<1255C
V
CC
x 0.65
V
CC
x 0.7
V
CC
x 0.7
V
CC
x 0.7
V
CC
x 0.35
V
CC
x 0.3
V
CC
x 0.3
V
CC
x 0.3
+1.0
2.0
Unit
V
V
IL
Low−level Input Voltage,
Control Input
V
I
IN
I
CC
Maximum Input Leakage
Current, Enable Inputs
Maximum Quiescent
Supply Current
(per package)
mA
mA
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3
NL7WB66
DC ELECTRICAL CHARACTERISTICS
−
Analog Section
Guaranteed Max Limit
Symbol
R
ON
Parameter
On−State Switch
Resistance
V
IS
= V
CC
V
IS
= GND
V
IS
= V
CC
V
IS
= GND
V
IS
= V
CC
V
IS
= GND
V
IS
= V
CC
V
IS
= 2.4
V
IS
= GND
Condition
I
S
= 4 mA
I
S
= 4 mA
I
S
= 8 mA
I
S
= 8 mA
I
S
= 24 mA
I
S
= 24 mA
I
S
= 32 mA
I
S
= 15 mA
I
S
= 32 mA
V
CC
1.65
1.65
2.3
2.3
3.0
3.0
4.5
4.5
4.5
1.65
2.3
3.0
4.5
1.65
2.3
3.0
4.5
1.65
2.3
3.0
4.5
5.5
255C
30
15
20
10
15
7.0
10
8.0
5.0
120
30
20
15
1.2
1.3
1.5
2.0
240
60
14
5.0
1.0
−40
to 855C
30
15
20
10
15
7.0
10
8.0
5.0
120
30
20
15
1.2
1.3
1.5
2.0
240
60
14
5.0
10
−55
to <1255C
30
15
20
10
15
7.0
10
8.0
5.0
120
30
20
15
1.2
1.3
1.5
2.0
240
60
14
5.0
100
Unit
W
R
ON(p)
Peak On−State Resistance
V
IS
= V
CC
to GND, I
S
= 4 mA
V
IN
= V
IH
I
S
= 8 mA
I
S
= 24 mA
I
S
= 32 mA
V
IS
= V
CC
to GND, I
S
= 4 mA
V
IN
= V
IH
I
S
= 8 mA
I
S
= 24 mA
I
S
= 32 mA
V
IS
= V
CC
to GND I
S
= 4 mA
I
S
= 8 mA
I
S
= 24 mA
I
S
= 32 mA
W
D
R
ON
Difference of On−State
Resistance between
Switches
W
R
FLAT
W
I
NO(OFF)
Off Leakage Current
V
IN
= V
IL
V
NO
= 1.0 V, V
COM
= 4.5 V or
V
COM
= 1.0 V and V
NO
4.5 V
V
IN
= V
IL
V
NO
= 4.5 V or 1.0 V
V
COM
= 1.0 V or 4.5 V
nA
I
COM(OFF)
Off Leakage Current
5.5
1.0
10
100
nA
AC ELECTRICAL CHARACTERISTICS
(Input t
r
= t
f
= 3.0 ns)
Guaranteed Max Limit
V
CC
= 1.8 V
$0.15
V
Symbol
t
ON
t
OFF
t
PD
Parameter
Output Enable Time
Output Disable Time
Propagation Delay Time
Test Conditions
Min
2.3
2.5
−
Max
10
10.5
0.55
V
CC
= 2.5 V
$0.2
V
Min
1.6
1.2
−
Max
5.6
6.9
0.5
V
CC
= 3.3 V
$0.3
V
Min
1.5
2.0
−
Max
4.4
7.2
0.35
V
CC
= 5.0 V
$0.5
V
Min
1.3
1.1
−
Max
3.9
6.3
0.25
Unit
ns
ns
ns
Typical @ 255C, V
CC
= 5.0 V
C
IN
C
NO1
or C
NO2
C
COM(OFF)
C
COM(ON)
Maximum Input Capacitance, Select Input
Analog I/O (Switch Off)
Common I/O (Switch Off)
Feed−through (Switch Off)
3.0
10
10
10
Unit
pF
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4
NL7WB66
ADDITIONAL APPLICATIONS CHARACTERISTICS
(Voltage Reference to GND Unless Noted)
Symbol
BW
Parameter
Maximum On−Channel
−3.0
dB
Bandwidth or Minimum Frequency
Response
Maximum Feed−Through On Loss
Condition
V
IS
= 0 dBm
V
IS
centered between V
CC
and GND
V
IS
= 0 dBm @ 10 kHz
V
IS
centered between V
CC
and GND
f = 100 kHz
V
IS
= 1.0 V RMS
V
IS
centered between V
CC
and GND
V
IS
= V
CC
to GND, F
IS
= 20 kHz
t
r
= t
f
= 3.0 nS
R
IS
= 0
W,
C
L
= 100 pF
F
IS
= 10 Hz to 100 kHz,
R
L
= R
gen
= 600
W,
C
L
= 50 pF
V
IS
= 3.0 V
PP
Sine Wave
V
IS
= 5.0 V
PP
Sine Wave
V
CC
(V)
2.0
3.0
4.5
2.0
3.0
4.5
2.0
3.0
4.5
3.0
5.5
3.0
5.5
Typical 255C
102
180
186
−2.2
−0.8
−0.4
−73
−74
−75
4.8
7.5
%
0.19
0.06
Unit
MHz
V
ONL
dB
V
ISO
Off−Channel Isolation
dB
Q
Charge Injection
Enable Input to Common I/O
Total Harmonic Distortion
TDH + Noise
pC
THD
DEVICE ORDERING INFORMATION
Device Nomenclature
Device
Order Number
NL7WB66USG
Circuit
Indicator
NL
Technology
AS
Device
Function
2066
Package
Suffix
US
Package
Type
US8
(Pb−Free)
Tape and
Reel Size
178 mm (7″)
3000 Units / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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5
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