WTN1A60
Logic Level
Bi-Directional Triode Thyristor
irecti
Trio
rist
sto
Features
eat
■
Repetitive Peak off-State Voltage: 600V
■
R.M.S On-State Current(I
T(RMS)
=0.9A
■
Low on-state voltage: V
TM
=1.2(typ.)@ I
TM
■
Low reverse and forward blocking current:
I
DRM
=500uA@TC=125℃
■
Low holding current: I
H
=4mA (typ.)
■
High Commutation dV/dt.
General Description
escri tio
rip
General purpose switching and phase control applications.
These devices are intended to be interfaced directly to micro-
controllers, logic integrated circuits and other low power gate
trigger circuits such as fan speed and temperature modulation
control, lighting control and static switching relay.
Absolute Maximum Ratings
(T
J
=25℃ unless otherwise specified)
imu
ing
Symbol
V
DRM
T
(RMS)
I
TSM
I
2
t
P
GM
P
G(AV)
dI/dt
I
FGM
V
RGM
T
J,
T
stg
Parameter
amet
Peak Repetitive Forward Blocking Voltage(gate open)
Forward Current RMS (All Conduction Angles, T
L
=50℃)
Peak Forward Surge Current, (full Cycle, Sine Wave, 50/60 Hz)
Circuit Fusing Considerations (tp= 10 ms)
Peak Gate Power — Forward, (Tc = 58°C,Pulse with≤1.0us)
Average Gate Power — Forward, (Over any 20ms period)
Critical rate of rise of on-state current
T
J
=125℃
I
TM
= 1.5A; I
G
= 200mA; dI
G
/dt = 200mA/µs
Peak Gate Current — Forward, Tj = 125°C (20 µs, 120 PPS)
Peak Gate Voltage — Reverse, Tj = 125°C (20 µs, 120 PPS)
Junction Temperature
Storage Temperature
mass
(Note 1)
Value
600
0.9
9.1/10
0.41
5
0.1
50
0.5
6
-40~125
-40~150
2
Units
V
A
A
A
2
s
W
W
A/μs
A
V
℃
℃
g
Note1:
.Although not recommended, off-state voltages up to 800V may be applied without damage, but the TRIAC may
Note1:
switch to the on-state. The rate of rise of current should not exceed 3A/us.
Thermal Characteristics
rmal Cha act ris
Symbol
R
QJC
R
QJA
Parameter
amet
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Min
-
-
Value
Typ
Typ
-
-
Max
Max
60
120
Units
℃/W
℃/W
Rev. A Jul 2011
Copyright @ WinSemi Co., Ltd., All rights reserved.
T01-3
WTN1A60
Electrical Characteristics
(T
J
= 25°C unless otherwise specified)
ectr
tri
Cha act ris tics
Symbol
I
DRM
V
TM
Characteristics
Peak Forward or Reverse Blocking Current
(V
D
= V
DRM
/V
RRM,
gate open)
Forward “On” Voltage
(I
TM
= 1.5 A)
T
J
=25℃
T
J
=125℃
(Note2)
T2+G+
T2+G-
T2-G-
T2-G+
T2+G+
T2+G-
T2-G-
T2-G+
Min
-
-
-
-
-
-
-
-
-
-
-
0.2
10
-
T2+G+
T2+G-
T2-G-
T2-G+
-
-
-
-
-
Typ.
-
-
1.2
0.4
1.3
1.4
3.8
-
-
-
-
-
20
1.3
1.2
4.0
1.0
2.5
-
Max
5
500
1.5
5
5
5
7
1.2
1.2
1.2
1.5
-
-
5
5
8
5
8
420
Unit
μA
V
Gate Trigger Current (Continuous dc)
I
GT
(V
D
= 12 Vdc, RL = 33 Ω)
Gate Trigger Voltage (Continuous dc)
(V
D
=12 Vdc, RL = 33 Ω)
Gate threshold voltage(T
J
=125℃, V
D
=V
DRM
,R
L
=3.3KΩ)
mA
V
GT
V
V
GD
dV/dt
I
H
V
V/μs
mA
Critical rate of rise of commutation Voltage (V
D
=0.67V
DRM
,gate open)
Holding Current
(V
D
=12 V, I
GT
= 100 mA)
I
L
latching current (V
D
= 12 V; I
GT
= 100 mA)
mA
R
d
Dynamic resistance
(T
J
=125℃)
mΩ
Note 2. Forward current applied for 1 ms maximum duration, duty cycle
2/5
Steady, all for your advance
DSP 与 ARM 处理器
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
