WTF16A60H
Bi-Directional Triode Thyristor
riode Thyristo
Features
■ Repetitive Peak off-State Voltage: 600V
■ R.M.S On-State Current(I
T(RMS)
=16A)
■ Isolation Voltage ( VISO = 1500V AC )
■ High Commutation dV/dt.
■ High Junction temperature(T
J
=150℃)
General Description
Winsemi Triac
WTF16A60H
is designed for full wave AC control applications.
TF16A6
It can be used as an ON/OFF function or for phase control operation.
By using an internal ceramic pad, the TO220F series provides voltage
insulated tab (rated at 2500V RMS) complying with UL standards (file
ref.:E347423)
Typical Application
■ Home Appliances : Washing Machines, Vacuum Cleaners, Rice
Cookers, Micro Wave Ovens, Hair Dryers, other
control applications
■ Industrial Use :
SMPS, Copier Machines, Motor Controls,
Dimmer, SSR, Heater Controls, Vending Machines,
other control applications
A1
A2
G
TO220F
Absolute Maximum Ratings
Symbol
V
DRM
/V
RRM
I
T(RMS)
I
TSM
It
P
GM
P
G(AV)
I
GM
V
GM
T
J
T
STG
2
(Tj=25℃ unless otherwise specified)
Parameter
Repetitive Peak Off-State Voltage
R.M.S On-State Current
Surge On-State Current
I2t
Peak Gate Power Dissipation
Average Gate Power Dissipation
Peak Gate Current
Peak Gate Voltage
Operating Junction Temperature
Storage Temperature
T
J
= 1118 °C
Condition
Ratings Units
600
16
155/170
120
5
0.5
2.0
7.0
-40~+150
-40~+150
V
A
A
A2s
W
W
A
V
℃
℃
50/60Hz, One cycle, Peak value, non-repetitiv
e
Thermal Characteristics
Symbol
R
QJC
R
QJA
Parameter
Thermal resistance, Junction-to-Case
Thermal resistance, Junction-to-Ambient
Value
Min
-
-
Typ
-
-
Max
3
150
Units
℃/W
℃/W
Rev. A Feb.2011
Copyright@Winsemi Microelectronics Co., Ltd., All right reserved.
WTF16A60H
Electrical Characteristics
(T
J
= 25°C,
R
GK
= 1 kΩ unless otherwise
specified)
Symbol
off-state leakage current
I
DRM
/I
RRM
V
TM
TJ=150℃
(V
AK
= V
DRM
/V
RRM
Single phase, half wave)
Forward “On” voltage (I
T
=25A, Inst. Measurement)
T2+,G+
I
GT
Gate trigger current (continuous dc)
(V
AK
= 6 Vdc, RL = 10 Ω)
T2+,G-
T2-,G-
T2+,G+
V
GT
Gate Trigger Voltage (Continuous dc) )
(V
AK
= 6 Vdc, RL = 10 Ω)
Gate threshold Voltage
V
GD
Ｖ
Ｄ
=1/2V
DRM
,
Critical Rate of Rise of Off-State Voltage at Commutation
(dv/dt)C
I
H
I
L
(V
D
=0.67V
DRM
;(d½/d½)c=-8A/ms)
Holding Current
latching current
T
J
=150℃
5
-
-
-
25
25
-
-
-
V/μs
mA
mA
T
J
=150℃
0.1
-
-
V
T2+,G-
T2-,G-
-
-
-
-
-
-
-
1.2
-
-
-
-
-
-
1.4
10
10
10
1.5
1.5
1.5
V
mA
V
-
-
3
mA
Characteristics
Min Typ.
Max
Unit
2 /4
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