Preliminary
Datasheet
RJK0630JPE
Silicon N Channel MOS FET
High Speed Power Switching
Features
•
•
•
•
•
For Automotive application
AEC-Q101 compliant
Low on-resistance : R
DS(on)
= 6.2 mΩ typ.
Capable of 4.5 V gate drive
Low input capacitance : Ciss = 2100 pF typ.
R07DS0340EJ0100
Rev.1.00
Apr 18, 2011
Outline
RENESAS Package code: PRSS0004AE-B
(Package name: LDPAK(S)-(1) )
2, 4
D
4
1G
1
2
3
1.
2.
3.
4.
Gate
Drain
Source
Drain
S
3
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Avalanche current
Avalanche energy
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW
≤
10
μs,
duty cycle
≤
1%
2. Tch = 25°C, Rg
≥
50
Ω
3. Tc = 25°C
4. AEC-Q101 compliant
Symbol
V
DSS
V
GSS
I
D
I
D
(pulse)
Note
1
I
DR
I
DR
(pulse)
Note
1
I
AP
Note
2
2
E
AR
Note
Pch
Note
3
Tch
Note
4
Tstg
Value
60
±20
75
300
75
300
35
105
85
175
–55 to +150
Unit
V
V
A
A
A
A
A
mJ
W
°C
°C
Thermal Impedance Characteristics
•
Channel to case thermal impedance
θch-c:
1.76°C/W
R07DS0340EJ0100 Rev.1.00
Apr 18, 2011
Page 1 of 6
RJK0630JPE
Preliminary
Electrical Characteristics
(Ta = 25°C)
Item
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate to source charge
Gate to drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body-drain diode forward voltage
Body-drain diode reverse recovery
time
Note:
5. Pulse test
Symbol
I
GSS
I
DSS
V
GS(off)
R
DS(on)
Ciss
Coss
Crss
Qg
Qgs
Qgd
t
d(on)
t
r
t
d(off)
t
f
V
DF
t
rr
Min
—
—
1.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
6.2
8.5
2100
550
420
49
7
15
16
17
65
18
0.94
45
Max
±10
1
2.0
7.5
11.5
—
—
—
—
—
—
—
—
—
—
—
—
Unit
μA
μA
V
mΩ
mΩ
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
V
ns
Test Conditions
V
GS
=
±20
V, V
DS
= 0
V
DS
= 60 V, V
GS
= 0
I
D
= 1 mA, V
DS
= 10 V
I
D
= 38 A, V
GS
= 10 V
Note
5
I
D
= 38 A, V
GS
= 4.5 V
Note
5
V
DS
= 10 V, V
GS
= 0
f = 1 MHz
V
DD
= 10 V, V
GS
= 10 V,
I
D
= 75 A
I
D
= 38 A, R
L
= 2.0
Ω,
V
GS
= 10 V, R
G
= 4.7
Ω
I
F
= 75 A, V
GS
= 0
Note
5
I
F
= 75 A, V
GS
= 0,
di
F
/dt = 100 A/μs
R07DS0340EJ0100 Rev.1.00
Apr 18, 2011
Page 2 of 6
RJK0630JPE
Preliminary
Main Characteristics
Power
vs. Temperature
Derating
100
1000
10
Maximum
Safe
Operation
Area
Pch (W)
Drain
Current I
D
(A)
80
100
10
1
μ
s
0
μ
s
Channel
Dissipation
60
10
Operation
in
this area
is limited
R
DS(on)
m
s
P
W
=
10
40
1
m
s
20
0.1
0.01
0.1
Tc =
25°C
1
shot
Pulse
DC
Operation
0
50
100
150
200
1
10
100
Case Temperature Tc
(°C)
Drain to Source
Voltage
V
DS
(V)
Typical Output Characteristics
100
10
V
4.5 V
3.6
V
100
10
Typical Transfer Characteristics
Drain
Current I
D
(A)
Drain
Current I
D
(A)
80
Tc =
175°C
60
V
GS
=
2.7
V
1
25°C
−40°C
40
0.1
20
Tc =
25°C
Pulse
Test
0
5
10
0.01
0.001
0
V
DS
=
10
V
Pulse
Test
1
2
3
4
5
Drain to Source
Voltage V
DS
(V)
Gate to Source
Voltage V
GS
(V)
Static Drain to Source State Resistance
vs.
Drain
Current
100
Tc =
25°C
Pulse
Test
Static Drain to Source
On
State Resistance
R
DS(on)
(mΩ)
50
I
D
=
38 A
Pulse
Test
40
30
Static Drain to Source
On
State Resistance
R
DS(on)
(mΩ)
Drain Source Saturation
Voltage vs.
Gate to Source
Voltage
10
V
GS
= 4.5 V
10
V
20
10
0
0
4
8
25°C
Tc =
175°C
−40°C
1
1
10
100
12
16
20
Gate to Source
Voltage V
GS
(V)
Drain
Current I
D
(A)
R07DS0340EJ0100 Rev.1.00
Apr 18, 2011
Page 3 of 6
RJK0630JPE
Static Drain to Source on State Resistance
vs. Temperature
20
Pulse
Test
I
D
=
38 A
V
GS
= 4.5 V
10000
Preliminary
Static Drain to Source
On
State Resistance
R
DS(on)
(mΩ)
Typical Capacitance vs.
Drain to Source
Voltage
Capacitance C
(pF)
16
3000
Ciss
12
1000
Coss
300
Tc =
25°C
V
GS
=
0
f =
1
MHz
0
5
10
15
20
Crss
25
30
8
10
V
4
0
−50
100
0
50
100
150
200
Case Temperature Tc
(°C)
Drain to Source
Voltage V
DS
(V)
Reverse Drain
Current vs.
Source to Drain
Voltage
Gate to Source
Voltage V
GS
(V)
20
100
Dynamic
Input Characteristics
Drain to Source
Voltage V
DS
(V)
50
V
GS
16
Reverse Drain
Current I
DR
(A)
Tc =
25°C
I
D
= 75
A
V
DD
=
25
V
10
V
5V
V
DS
10
V
80
Tc =
25°C
Pulse
Test
40
30
12
60
20
V
DD
=
25
V
10
V
5V
20
40
60
80
8
40
V
GS
=
0,
−5
V
10
4
0
100
20
0
0
0.4
0.8
1.2
1.6
2.0
Gate
Charge Qg
(nc)
Source to Drain
Voltage V
SD
(V)
Avalanche
Energy vs.
Channel Temperature
Derating
Repetitive Avalanche
Energy E
AR
(mJ)
200
I
AP
=
35 A
V
DD
=
25
V
duty
<
0.1
%
Rg
≥
50
Ω
150
100
50
0
25
50
75
100
125
150
175
Channel Temperature Tch
(°C)
R07DS0340EJ0100 Rev.1.00
Apr 18, 2011
Page 4 of 6
RJK0630JPE
Normalized Transient Thermal Impedance
γ
s
(t)
Normalized Transient Thermal Impedance vs.
Pulse
Width
10
Preliminary
1
D
=
1
0.5
0.2
0
.1
0.1
0
.
0
5
θch
–
c(t)
=
γs
(t)
•
θch
–
c
θch
–
c
=
1.76°C/W,
Tc =
25°C
0
.
01
o
sh
u
t
p
ls
e
P
DM
PW
T
D
=
PW
T
0
.
02
1
0.01
10
μ
100
μ
1m
10 m
100 m
1
10
Pulse
Width
PW (s)
Avalanche
Test Circuit
V
DS
Monitor
L
I
AP
Monitor
Avalanche
Waveform
E
AR
=
1
2
L
•
I
AP2
•
V
DSS
V
DSS
– V
DD
V
(BR)DSS
Rg
D.
U. T
V
DD
I
AP
V
DS
Vin
15
V
50
Ω
I
D
0
V
DD
Switching
Time Test Circuit
Vin Monitor
D.U.T.
Rg
R
L
V
DS
=
30
V
Vin
Vout
Vin
10
V
Vout
Monitor
Switching
Time Waveform
90%
10%
10%
10%
90%
td(on)
tr
90%
td(off)
t
f
R07DS0340EJ0100 Rev.1.00
Apr 18, 2011
Page 5 of 6
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