Preliminary
Datasheet
RJK0226DNS
Silicon N Channel Power MOS FET with Schottky Barrier Diode
Power Switching
R07DS0260EJ0110
Rev.1.10
Mar 03, 2011
Features
High speed switching
Capable of 4.5 V gate drive
Low drive current
High density mounting
Low on-resistance
R
DS(on)
= 2.3 m
typ. (at V
GS
= 8 V)
Pb-free
Halogen-free
Outline
Package name: 8pin HVSON(3333)
5 6 7 8
D D D D
5 6 7 8
4
G
4 3 2 1
1, 2, 3
Source
4
Gate
5, 6, 7, 8 Drain
S S S
1 2 3
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Notes: 1. PW
10
s,
duty cycle
1%
2. Value at Tch = 25C, Rg
50
3. Tc = 25C
Symbol
V
DSS
V
GSS
I
D
I
D(pulse)
I
DR
I
AP Note 2
E
AR Note 2
Pch
Note3
ch-c
Note3
Tch
Tstg
Note1
Ratings
25
±12
40
160
40
14.7
27
30
4.17
150
–55 to +150
Unit
V
V
A
A
A
A
mJ
W
C/W
C
C
R07DS0260EJ0110 Rev.1.10
Mar 03, 2011
Page 1 of 6
RJK0226DNS
Preliminary
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate Resistance
Total gate charge
Gate to source charge
Gate to drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body–drain diode forward voltage
Body–drain diode reverse recovery
time
Notes: 4. Pulse test
Symbol
V
(BR)DSS
I
GSS
I
DSS
V
GS(off)
R
DS(on)
R
DS(on)
|y
fs
|
Ciss
Coss
Crss
Rg
Qg
Qgs
Qgd
t
d(on)
t
r
t
d(off)
t
f
V
DF
t
rr
Min
25
—
—
1.2
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
2.3
2.7
115
4300
565
340
2.6
31
11
8
18.6
8.7
65
13
0.39
28
Max
—
±0.1
1
2.5
2.8
3.4
—
6020
—
—
4.5
—
—
—
—
—
—
—
—
—
Unit
V
A
mA
V
m
m
S
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
V
ns
Test Conditions
I
D
= 10 mA, V
GS
= 0
V
GS
= ±12 V, V
DS
= 0
V
DS
= 25 V, V
GS
= 0
V
DS
= 10 V, I
D
= 1 mA
I
D
= 20 A, V
GS
= 8 V
Note4
I
D
= 20 A, V
GS
= 4.5 V
Note4
I
D
= 20 A, V
DS
= 5 V
Note4
V
DS
= 10 V
V
GS
= 0
f = 1 MHz
V
DD
= 10 V
V
GS
= 4.5 V
I
D
= 40 A
V
GS
= 8 V, I
D
= 20 A
V
DD
10 V
R
L
= 0.5
Rg = 4.7
I
F
= 2 A, V
GS
= 0
Note4
I
F
=40 A, V
GS
= 0
di
F
/ dt = 100 A/
s
R07DS0260EJ0110 Rev.1.10
Mar 03, 2011
Page 2 of 6
RJK0226DNS
Preliminary
Main Characteristics
Power vs. Temperature Derating
40
1000
Maximum Safe Operation Area
Channel Dissipation Pch (W)
Drain Current I
D
(A)
10
100
30
μ
s
10
0
1
s
m
μ
s
20
10
PW = 10 ms
DC
O
10
1
Operation in
this area is
limited by R
DS(on)
pe
ra
tio
0
50
100
150
200
Tc = 25 °C
0.1
1 shot Pulse
0.1
1
n
10
100
Case Temperature Tc (°C)
Drain to Source Voltage V
DS
(V)
Typical Output Characteristics
50
4.5 V
8V
50
Typical Transfer Characteristics
V
DS
= 5 V
Pulse Test
Pulse Test
2.8 V
Drain Current I
D
(A)
30
Drain Current I
D
(A)
40
40
30
20
20
10
V
GS
= 2.4 V
10
Tc = 75°C
25°C
–25°C
0
2
4
6
8
10
0
1
2
3
4
5
Drain to Source Voltage V
DS
(V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
Drain to Source Saturation Voltage
V
DS(on)
(mV)
200
Gate to Source Voltage V
GS
(V)
Static Drain to Source On State Resistance
vs. Drain Current
100
Pulse Test
Static Drain to Source On State Resistance
R
DS(on)
(mΩ)
Pulse Test
30
150
100
10
50
I
D
= 20 A
10 A
5A
3
V
GS
= 4.5 V
8V
0
3
6
9
12
1
1
3
10
30
100
300 1000
Gate to Source Voltage V
GS
(V)
Drain Current I
D
(A)
R07DS0260EJ0110 Rev.1.10
Mar 03, 2011
Page 3 of 6
RJK0226DNS
Static Drain to Source On State Resistance
vs. Temperature
5
Pulse Test
4
V
GS
= 4.5 V
5 A, 10 A, 20 A
2
8V
I
D
= 5 A, 10 A, 20 A
3000
10000
Preliminary
Typical Capacitance vs.
Drain to Source Voltage
Capacitance C (pF)
Ciss
1000
Coss
300
Crss
100
30
10
0
3
1
0
–25
V
GS
= 0
f = 1 MHz
10
20
25
0
25
50
75
100 125 150
Case Temperature Tc (°C)
Drain to Source Voltage V
DS
(V)
Dynamic Input Characteristics
Drain to Source Voltage V
DS
(V)
Gate to Source Voltage V
GS
(V)
50
Reverse Drain Current vs.
Source to Drain Voltage
20
50
Reverse Drain Current I
DR
(A)
I
D
= 40 A
10 V
40
5V
Pulse Test
40
V
GS
30
V
DS
20
V
DD
= 20 V
10 V
16
12
30
8
20
V
GS
= 0, –5 V
10
V
DD
= 20 V
10 V
0
20
40
60
80
4
10
0
0
100
0
0.4
0.8
1.2
1.6
2.0
Gate Charge Qg (nc)
Source to Drain Voltage V
SD
(V)
Maximum Avalanche Energy vs.
Channel Temperature Derating
Repetitive Avalanche Energy E
AR
(mJ)
50
40
30
20
10
0
25
50
75
100
125
150
Channel Temperature Tch (°C)
R07DS0260EJ0110 Rev.1.10
Mar 03, 2011
Page 4 of 6
RJK0226DNS
Normalized Transient Thermal Impedance vs. Pulse Width
Preliminary
Normalized Transient Thermal Impedance
γ
s (t)
3
1
D=1
0.5
0.3
0.2
0.1
0.1
θch −
c(t) =
γs
(t)
• θch −
c
θch −
c = 4.17°C/W, Tc = 25°C
P
DM
0.05
0.03
D=
PW
T
2
0.0
01
0.
1s
t
ho
l
pu
se
PW
T
0.01
10
μ
100
μ
1m
10 m
100 m
1
10
Pulse Width PW (S)
Avalanche Test Circuit
Avalanche Waveform
1
2
L
•
I
AP2
•
V
DSS
V
DSS
– V
DD
V
(BR)DSS
I
AP
Rg
D. U. T
V
DD
V
DS
V
DS
Monitor
L
I
AP
Monitor
E
AR
=
I
D
Vin
10 V
50
Ω
0
V
DD
Switching Time Test Circuit
Vin Monitor
D.U.T.
Rg
R
L
V
DS
= 10 V
Vin
Vout
Vin
8V
Vout
Monitor
Switching Time Waveform
90%
10%
10%
10%
90%
td(on)
tr
90%
td(off)
tf
R07DS0260EJ0110 Rev.1.10
Mar 03, 2011
Page 5 of 6
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