Preliminary
Datasheet
RJH60T4DPQ-A0
Silicon N Channel IGBT
High Speed Power Switching
Features
Low collector to emitter saturation voltage
V
CE(sat)
= 1.7 V typ. (at I
C
= 30 A, V
GE
= 15 V, Ta = 25°C)
Built in fast recovery diode in one package
Trench gate and thin wafer technology
High speed switching
R07DS0460EJ0100
Rev.1.00
Jun 15, 2011
Outline
RENESAS Package code: PRSS0003ZH-A
(Package name: TO-247A)
C
4
G
1. Gate
2. Collector
3. Emitter
4. Collector
E
1 2
3
Absolute Maximum Ratings
(Tc = 25°C)
Item
Collector to emitter voltage
Gate to emitter voltage
Collector current
Tc = 25 °C
Tc = 100 °C
Collector peak current
Collector to emitter diode forward peak current
Collector dissipation
Junction to case thermal impedance (IGBT)
Junction to case thermal impedance (Diode)
Junction temperature
Storage temperature
Notes: 1. Pulse width limited by safe operating area.
2. PW
5
s,
duty cycle
1%
Symbol
V
CES
V
GES
Note1
I
C
Note1
I
C
ic(peak)
Note1
i
DF
(peak)
Note2
P
C
j-c
j-cd
Tj
Tstg
Ratings
600
30
60
30
120
80
235.8
0.53
2.1
150
–55 to +150
Unit
V
V
A
A
A
A
W
°C/W
°C/W
°C
°C
R07DS0460EJ0100 Rev.1.00
Jun 15, 2011
Page 1 of 7
RJH60T4DPQ-A0
Preliminary
Electrical Characteristics
(Tj = 25°C)
Item
Zero gate voltage collector current
Gate to emitter leak current
Gate to emitter cutoff voltage
Collector to emitter saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Switching time
Symbol
I
CES
I
GES
V
GE(off)
V
CE(sat)
V
CE(sat)
Cies
Coes
Cres
t
d(on)
t
r
t
d(off)
t
f
V
ECF
t
rr
Min
4
Typ
1.7
2.2
1900
93
33
45
86
85
72
1.2
100
Max
100
±1
8
2.2
1.6
Unit
A
A
V
V
V
pF
pF
pF
ns
ns
ns
ns
V
ns
Test Conditions
V
CE
= 600V, V
GE
= 0
V
GE
= ±30 V, V
CE
= 0
V
CE
= 10V, I
C
= 1 mA
I
C
= 30 A, V
GE
= 15V
Note3
I
C
= 60 A, V
GE
= 15V
Note3
V
CE
= 25 V
V
GE
= 0 V
f = 1 MHz
I
C
= 30 A,
V
CE
= 400 V, V
GE
= 15 V
Rg = 5
Note3
Inductive load
I
F
= 20 A
Note3
I
F
= 10 A
di
F
/dt =
20
A/s
C-E diode forward voltage
C-E diode reverse recovery time
Notes: 3. Pulse test
R07DS0460EJ0100 Rev.1.00
Jun 15, 2011
Page 2 of 7
RJH60T4DPQ-A0
Preliminary
Main Characteristics
Maximum Safe Operation Area
1000
120
Typical Output Characteristics
Ta = 25
°
C
Pulse Test
10 V
15 V
9.5 V
9V
8.8 V
8.6 V
8.4 V
8.2 V
40
20
V
GE
= 7.6 V
0
8V
7.8 V
Collector Current I
C
(A)
100
Collector Current I
C
(A)
PW = 10
μs
100
80
60
10
1
0.1
Ta = 25
°
C
1 shot pulse
1
10
100
1000
0.01
0
1
2
3
4
5
Collector to Emitter Voltage V
CE
(V)
Collector to Emitter Voltage V
CE
(V)
Typical Transfer Characteristics
Collector to Emitter Saturation Voltage
vs. Gate to Emitter Voltage (Typical)
Collector to Emitter Saturation Voltage
V
CE(sat)
(V)
120
3.5
Ta = 25
°
C
Pulse Test
3.0
Collector Current I
C
(A)
100
80
60
40
20
0
0
V
CE
= 10 V
Pulse Test
2.5
I
C
= 60 A
30 A
1.5
15 A
Ta = 75°C
25°C
–25°C
2.0
1.0
2
4
6
8
10
6
8
10
12
14
16
18
20
Gate to Emitter Voltage V
GE
(V)
Collector to Emitter Saturation Voltage
vs. Junction Temperature (Typical)
Gate to Emitter Voltage V
GE
(V)
Gate to Emitter Cutoff Voltage
vs. Case Temperature (Typical)
10
V
CE
= 10 V
Pulse test
8
I
C
= 10 mA
6
2.8
V
GE
= 15 V
Pulse Test
2.4
I
C
= 60 A
2.0
30 A
15 A
1.6
Gate to Emitter Cutoff Voltage V
GE(off)
(V)
Collector to Emitter Saturation Voltage
V
CE(sat)
(V)
4
1 mA
1.2
2
0.8
−25
0
25
50
75
100 125 150
0
-25
0
25
50
75
100 125 150
Junction Temperature Tj (
°
C)
Junction Temperature
Tj (°C)
R07DS0460EJ0100 Rev.1.00
Jun 15, 2011
Page 3 of 7
RJH60T4DPQ-A0
Preliminary
Typical Capacitance vs.
Colloctor to Emitter Voltage
10000
Diode Forward Characteristics (Typical)
100
V
CE
= 0 V
Ta = 25
°
C
Pulse Test
Forward Current I
F
(A)
Cies
Capacitance C (pF)
80
1000
60
100
Coes
Cres
10
V
GE
= 0 V
f = 1 MHz
Ta = 25
°
C
0
50
100
150
200
250
300
40
20
0
0
0.4
0.8
1.2
1.6
2.0
1
Forward Voltage V
F
(V)
Colloctor to Emitter Voltage V
CE
(V)
Dynamic Input Characteristics (Typical)
Colloctor to Emitter Voltage V
CE
(V)
V
GE
V
CE
600
V
CC
= 600 V
300 V
400
8
12
200
V
CC
= 600 V
300 V
4
I
C
= 30 A
Ta = 25
°
C
72
0
90
0
0
18
36
54
Gate Charge Qg (nC)
R07DS0460EJ0100 Rev.1.00
Jun 15, 2011
Gate to Emitter Voltage V
GE
(V)
800
16
Page 4 of 7
RJH60T4DPQ-A0
Switching Characteristics (Typical) (1)
1000
V
CC
= 400 V, V
GE
= 15 V
Rg = 5
Ω,
Tj = 150
°
C
tr includes the diode recovery
Preliminary
Switching Characteristics (Typical) (2)
100000
Swithing Energy Losses E (μJ)
Switching Times t (ns)
10000
V
CC
= 400 V, V
GE
= 15 V
Rg = 5
Ω,
Tj = 150
°
C
Eon includes the diode recovery
tf
100
td(off)
tr
td(on)
1000
Eoff
100
Eon
10
1
10
100 200
10
1
10
100 200
Collector Current I
C
(A)
(Inductive load)
Switching Characteristics (Typical) (3)
160
Collector Current I
C
(A)
(Inductive load)
Switching Characteristics (Typical) (4)
1600
Swithing Energy Losses E (μJ)
Switching Times t (ns)
120
V
CC
= 400 V, V
GE
= 15 V
I
C
= 30 A, Rg = 5
Ω
tr includes the diode recovery
tr
1200
V
CC
= 400 V, V
GE
= 15 V
I
C
= 30 A, Rg = 5
Ω
Eon includes the diode recovery
80
td(off)
tf
Eoff
800
Eon
400
40
td(on)
0
0
25
50
75
100
125
150
0
0
25
50
75
100
125
150
Junction Temperature Tj (°C)
(Inductive load)
Junction Temperature Tj (°C)
(Inductive load)
R07DS0460EJ0100 Rev.1.00
Jun 15, 2011
Page 5 of 7
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