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RJH60M2DPP-M0: 产品描述600 V - 12 A - IGBT Application: Inverter; 文件大小49KB，共4页; 制造商Renesas(瑞萨电子); 官网地址https://www.renesas.com/

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RJH60M2DPP-M0概述

600 V - 12 A - IGBT Application: Inverter

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Preliminary Datasheet

RJH60M2DPP-M0

600 V - 12 A - IGBT

Application: Inverter

Features



Short circuit withstand time (8

s

typ.)



Low collector to emitter saturation voltage

CE(sat)

= 1.9 V typ. (at I

= 12 A, V

= 15 V, Ta = 25°C)



Built in fast recovery diode (100 ns typ.) in one package



Trench gate and thin wafer technology



High speed switching

= 80 ns typ. (at V

= 300 V, V

= 15 V, I

= 12 A, Rg = 5

,

Ta = 25°C, inductive load)

R07DS0530EJ0100

Rev.1.00

Sep 02, 2011

Outline

RENESAS Package code: PRSS0003AF-A

(Package name: TO-220FL)

1. Gate

2. Collector

3. Emitter

2 3

Absolute Maximum Ratings

(Ta = 25°C)

Item

Collector to emitter voltage / diode reverse voltage

Gate to emitter voltage

Collector current

Tc = 25°C

Tc = 100°C

Collector peak current

Collector to emitter diode forward current

Collector to emitter diode forward peak current

Collector dissipation

Junction to case thermal resistance (IGBT)

Junction to case thermal resistance (Diode)

Junction temperature

Storage temperature

Notes: 1. PW



s,

duty cycle



2. Value at Tc = 25C

Symbol

CES

/ V

GES

ic(peak)

Note1

(peak)

Note1

Note2

j-c

Note2

j-cd

Note2

Tstg

Ratings

600

±30

27.2

4.6

6.3

150

–55 to +150

Unit

°C/ W

°C

R07DS0530EJ0100 Rev.1.00

Sep 02, 2011

Page 1 of 3

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(Note 1)

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