Preliminary
Datasheet
RJH60F4DPK
Silicon N Channel IGBT
High Speed Power Switching
Features
R07DS0235EJ0300
(Previous: REJ03G1835-0200)
Rev.3.00
Nov 17, 2010
Low collector to emitter saturation voltage
V
CE(sat)
= 1.4 V typ. (at I
C
= 30 A, V
GE
= 15 V, Ta = 25°C)
Built in fast recovery diode in one package
Trench gate and thin wafer technology
High speed switching
t
f
= 80 ns typ. (at I
C
= 30 A, V
CE
= 400 V, V
GE
= 15 V, Rg = 5
,
Ta = 25°C, inductive load)
Outline
RENESAS Package code: PRSS0004ZE-A
(Package name: TO-3P)
C
4
G
1. Gate
2. Collector
3. Emitter
4. Collector (Flange)
E
1
2
3
Absolute Maximum Ratings
(Tc = 25°C)
Item
Collector to emitter voltage
Gate to emitter voltage
Collector current
Tc = 25 °C
Tc = 100 °C
Collector peak current
Collector to emitter diode forward peak current
Collector dissipation
Junction to case thermal impedance
Junction temperature
Storage temperature
Notes: 1. Pulse width limited by safe operating area.
2. PW
5
s,
duty cycle
1%
Symbol
V
CES
V
GES
I
C Note1
I
C Note1
ic(peak)
Note1
i
DF
(peak)
Note2
P
C
j-c
Tj
Tstg
Ratings
600
30
60
30
120
100
235.8
0.53
150
–55 to +150
Unit
V
V
A
A
A
A
W
°C/W
°C
°C
R07DS0235EJ0300 Rev.3.00
Nov 17, 2010
Page 1 of 7
RJH60F4DPK
Preliminary
Electrical Characteristics
(Tj = 25°C)
Item
Zero gate voltage collector current
Gate to emitter leak current
Gate to emitter cutoff voltage
Collector to emitter saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Switching time
Symbol
I
CES
I
GES
V
GE(off)
V
CE(sat)
V
CE(sat)
Cies
Coes
Cres
t
d(on)
t
r
t
d(off)
t
f
V
ECF1
V
ECF2
t
rr
Min
4
Typ
1.4
1.7
1900
93
33
45
150
85
80
1.6
1.8
140
Max
100
±1
8
1.82
2.1
Unit
A
A
V
V
V
pF
pF
pF
ns
ns
ns
ns
V
V
ns
Test Conditions
V
CE
= 600V, V
GE
= 0
V
GE
= ±30 V, V
CE
= 0
V
CE
= 10V, I
C
= 1 mA
I
C
= 30 A, V
GE
= 15V
Note3
I
C
= 60 A, V
GE
= 15V
Note3
V
CE
= 25 V
V
GE
= 0 V
f = 1 MHz
I
C
= 30 A,
V
CE
= 400 V, V
GE
= 15 V
Rg = 5
Note3
Inductive load
I
F
= 20 A
Note3
I
F
= 40 A
Note3
I
F
= 20 A
di
F
/dt = 100 A/s
C-E diode forward voltage
C-E diode reverse recovery time
Notes: 3. Pulse test
R07DS0235EJ0300 Rev.3.00
Nov 17, 2010
Page 2 of 7
RJH60F4DPK
Preliminary
Main Characteristics
Maximum Safe Operation Area
1000
120
Typical Output Characteristics
Ta = 25
°
C
Pulse Test
12 V
15 V
11 V
10 V
Collector Current I
C
(A)
Collector Current I
C
(A)
100
10
μ
s
100
80
60
9.5 V
PW
10
=
10
0
μ
s
1
9V
40
20
0
8.5 V
0.1
Ta = 25
°
C
1 shot pulse
1
10
100
1000
V
GE
= 8 V
0
1
2
3
4
5
0.01
Collector to Emitter Voltage V
CE
(V)
Collector to Emitter Voltage V
CE
(V)
Typical Transfer Characteristics
Collector to Emitter Saturation Voltage
vs. Gate to Emitter Voltage (Typical)
Collector to Emitter Saturation Voltage
V
CE(sat)
(V)
120
3.0
Ta = 25
°
C
Pulse Test
2.4
I
C
= 60 A
1.8
Collector Current I
C
(A)
100
80
60
40
20
0
4
V
CE
= 10 V
Pulse Test
Tc = 75°C
25°C
–25°C
1.2
30 A
0.6
6
8
10
12
14
15 A
16
18
20
6
8
10
12
14
Gate to Emitter Voltage V
GE
(V)
Collector to Emitter Saturation Voltage
vs. Junction Temparature (Typical)
Gate to Emitter Voltage V
GE
(V)
Gate to Emitter Cutoff Voltage
vs. Case Temperature (Typical)
10
V
CE
= 10 V
8
2.0
V
GE
= 15 V
Pulse Test
1.8
I
C
= 60 A
1.6
30 A
1.4
15 A
1.2
Gate to Emitter Cutoff Voltage V
GE(off)
(V)
Collector to Emitter Saturation Voltage
V
CE(sat)
(V)
6
I
C
= 10 mA
4
1 mA
2
1.0
−25
0
25
50
75
100 125 150
0
-25
0
25
50
75
100 125 150
Junction Temparature Tj (
°
C)
Junction Temperature
Tj (°C)
R07DS0235EJ0300 Rev.3.00
Nov 17, 2010
Page 3 of 7
RJH60F4DPK
Collector to Emitter Diode Forward Voltage vs.
Diode Forward Current Characteristics (Typical)
100
10000
V
GE
= 0 V
Pulse Test
Preliminary
Typical Capacitance vs.
Colloctor to Emitter Voltage
Diode Forward Current I
F
(A)
Cies
Capacitance C (pF)
80
1000
60
100
Coes
10
V
GE
= 0 V
f = 1 MHz
Ta = 25
°
C
0
50
100
150
200
250
300
Cres
40
20
0
0
1
2
3
4
5
1
Collector to Emitter Diode
Forward Voltage V
ECF
(V)
Dynamic Input Characteristics (Typical)
Colloctor to Emitter Voltage V
CE
(V)
Gate to Emitter Voltage V
GE
(V)
800
V
GE
V
CE
V
CE
= 600 V
300 V
16
Colloctor to Emitter Voltage V
CE
(V)
600
12
400
8
200
V
CE
= 600 V
300 V
0
0
20
40
60
4
I
C
= 30 A
80
0
100
Gate Charge Qg (nC)
R07DS0235EJ0300 Rev.3.00
Nov 17, 2010
Page 4 of 7
RJH60F4DPK
Switching Characteristics (Typical) (1)
1000
V
CC
= 400 V, V
GE
= 15 V
Rg = 5
Ω,
Tj = 150
°
C
tr includes the diode recovery
tf
100
td(off)
tr
td(on)
Preliminary
Switching Characteristics (Typical) (2)
100000
Swithing Energy Losses E (μJ)
Switching Times t (ns)
10000
V
CC
= 400 V, V
GE
= 15 V
Rg = 5
Ω,
Tj = 150
°
C
Eon includes the diode recovery
1000
100
Eoff
Eon
10
1
10
100 200
10
1
10
100
Collector Current I
C
(A)
(Inductive load)
Switching Characteristics (Typical) (3)
240
Collector Current I
C
(A)
(Inductive load)
Switching Characteristics (Typical) (4)
1600
Swithing Energy Losses E (μJ)
Switching Times t (ns)
200
160
120
V
CC
= 400 V, V
GE
= 15 V
I
C
= 30 A, Rg = 5
Ω
tr includes the diode recovery
tr
1200
V
CC
= 400 V, V
GE
= 15 V
I
C
= 30 A, Rg = 5
Ω
Eon includes the diode recovery
Eoff
800
Eon
400
td(off)
80
40
0
0
25
50
75
100
125
150
tf
td(on)
0
0
25
50
75
100
125
150
Junction Temperature Tj (°C)
(Inductive load)
Junction Temperature Tj (°C)
(Inductive load)
R07DS0235EJ0300 Rev.3.00
Nov 17, 2010
Page 5 of 7
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