Preliminary
Datasheet
RJH60D7DPM
Silicon N Channel IGBT
Application: Inverter
Features
Short circuit withstand time (5
s
typ.)
Low collector to emitter saturation voltage
V
CE(sat)
= 1.6 V typ. (at I
C
= 50 A, V
GE
= 15 V, Ta = 25°C)
Built in fast recovery diode (100 ns typ.) in one package
Trench gate and thin wafer technology
High speed switching
t
f
= 50 ns typ. (at V
CC
= 300 V, V
GE
= 15 V, I
C
= 50 A, Rg = 5
,
Ta = 25°C, inductive load)
R07DS0176EJ0200
Rev.2.00
Nov 16, 2010
Outline
RENESAS Package code: PRSS0003ZA-A
(Package name: TO-3PFM)
C
G
1. Gate
2. Collector
3. Emitter
E
1
2
3
Absolute Maximum Ratings
(Ta = 25°C)
Item
Collector to emitter voltage / diode reverse voltage
Gate to emitter voltage
Collector current
Tc = 25°C
Tc = 100°C
Collector peak current
Collector to emitter diode forward current
Collector to emitter diode forward peak current
Collector dissipation
Junction to case thermal resistance (IGBT)
Junction to case thermal resistance (Diode)
Junction temperature
Storage temperature
Notes: 1. PW
10
s,
duty cycle
1%
2. Value at Tc = 25C
Symbol
V
CES
/ V
R
V
GES
I
C
I
C
ic(peak)
i
DF
i
DF
(peak)
Note1
P
C Note2
j-c
Note2
j-cd
Note2
Tj
Tstg
Note1
Ratings
600
±30
90
50
200
30
120
55
2.27
3.95
150
–55 to +150
Unit
V
V
A
A
A
A
A
W
°C/ W
°C/ W
°C
°C
R07DS0176EJ0200 Rev.2.00
Nov 16, 2010
Page 1 of 7
RJH60D7DPM
Preliminary
Electrical Characteristics
(Ta = 25°C)
Item
Zero gate voltage collector current
/ Diode reverse current
Gate to emitter leak current
Gate to emitter cutoff voltage
Collector to emitter saturation voltage
Input capacitance
Output capacitance
Reveres transfer capacitance
Total gate charge
Gate to emitter charge
Gate to collector charge
Switching time
Symbol
I
CES
/ I
R
I
GES
V
GE(off)
V
CE(sat)
V
CE(sat)
Cies
Coes
Cres
Qg
Qge
Qgc
t
d(on)
t
r
t
d(off)
t
f
t
sc
V
F
t
rr
Min
—
—
4.0
—
—
—
—
—
—
—
—
—
—
—
—
3.0
—
—
Typ
—
—
—
1.6
1.8
3150
180
95
125
25
50
60
50
180
50
5.0
1.4
100
Max
5
±1
6.0
2.2
—
—
—
—
—
—
—
—
—
—
—
—
1.9
—
Unit
A
A
V
V
V
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
s
V
ns
Test Conditions
V
CE
= 600 V, V
GE
= 0
V
GE
= ±30 V, V
CE
= 0
V
CE
= 10 V, I
C
= 1 mA
I
C
= 50 A, V
GE
= 15 V
Note3
I
C
= 90 A, V
GE
= 15 V
Note3
V
CE
= 25 V
V
GE
= 0
f = 1 MHz
V
GE
= 15 V
V
CE
= 300 V
I
C
= 50 A
V
CC
= 300 V, V
GE
= 15 V
I
C
= 50 A
Rg = 5
(Inductive load)
V
CC
400 V, V
GE
= 15 V
I
F
= 30 A
Note3
I
F
= 30 A
di
F
/dt = 100 A/s
Short circuit withstand time
FRD forward voltage
FRD reverse recovery time
Notes: 3. Pulse test
R07DS0176EJ0200 Rev.2.00
Nov 16, 2010
Page 2 of 7
RJH60D7DPM
Preliminary
Main Characteristics
Collector Dissipation vs.
Case Temperature
60
120
Maximum DC Collector Current vs.
Case Temperature
Collector Dissipation Pc (W)
Collector Current I
C
(A)
50
40
30
20
10
0
0
25
50
75
100 125 150 175
100
80
60
40
20
0
0
25
50
75
100 125 150 175
Case Temperature Tc (°C)
Case Temperature Tc (°C)
Maximum Safe Operation Area
1000
200
Turn-off SOA
Collector Current I
C
(A)
100
PW
10
0
μ
s
Collector Current I
C
(A)
=
160
10
μ
s
120
10
80
1
Tc = 25°C
Single pulse
40
0.1
1
0
10
100
1000
0
200
400
600
800
Collector to Emitter Voltage V
CE
(V)
Collector to Emitter Voltage V
CE
(V)
Typical Output Characteristics
Pulse Test
Ta = 25
°
C
11 V
Typical Output Characteristics
Pulse Test
Ta = 150
°
C
15 V
11 V
10 V
120
9V
80
V
GE
= 8 V
40
Collector Current I
C
(A)
120
15 V
9V
80
V
GE
= 8 V
40
0
0
1
2
3
4
5
Collector Current I
C
(A)
160
10 V
160
0
0
1
2
3
4
5
Collector to Emitter Voltage V
CE
(V)
Collector to Emitter Voltage V
CE
(V)
R07DS0176EJ0200 Rev.2.00
Nov 16, 2010
Page 3 of 7
RJH60D7DPM
Collector to Emitter Saturation Voltage
vs. Gate to Emitter Voltage (Typical)
Preliminary
Collector to Emitter Saturation Voltage
vs. Gate to Emitter Voltage (Typical)
Collector to Emitter Saturation Voltage
V
CE(sat)
(V)
5
Ta = 25
°
C
Pulse Test
4
I
C
= 50 A
90 A
2
Collector to Emitter Saturation Voltage
V
CE(sat)
(V)
5
Ta = 150
°
C
Pulse Test
4
I
C
= 50 A
90 A
2
3
3
1
1
0
0
4
8
12
16
20
0
0
4
8
12
16
20
Gate to Emitter Voltage V
GE
(V)
Gate to Emitter Voltage V
GE
(V)
Typical Transfer Characteristics
Diode Forward Characteristics (Typical)
120
160
Collector Current I
C
(A)
Forward Current I
F
(A)
100
80
60
40
20
0
0
Ta = 25
°
C
150
°
C
Ta = 25°C
120
150°C
80
40
V
CE
= 10 V
Pulse Test
0
0
4
8
12
16
V
CE
= 0 V
Pulse Test
1
2
3
4
Gate to Emitter Voltage V
GE
(V)
Typical Capacitance vs.
Colloctor to Emitter Voltage
10000
Ta = 25
°
C
Cies
Forward Voltege V
F
(V)
Capacitance C (pF)
1000
100
Coes
Cres
V
GE
= 0 V
f = 1 MHz
10
0
50
100
150
200
250
300
Colloctor to Emitter Voltage V
CE
(V)
R07DS0176EJ0200 Rev.2.00
Nov 16, 2010
Page 4 of 7
RJH60D7DPM
Switching Characteristics (Typical) (1)
1000
Preliminary
Switching Characteristics (Typical) (2)
10000
td(off)
100
td(on)
Swithing Energy Losses E (μJ)
V
CC
= 300 V, V
GE
= 15 V
Rg = 5
Ω,
Ta = 150
°
C
Switching Times t (ns)
1000
E(off)
100
10
tf
tr
V
CC
= 300 V, V
GE
= 15 V
Rg = 5
Ω,
Ta = 25
°
C
1
10
100
1000
10
E(on)
1
1
1
10
100
1000
Collector Current I
C
(A)
(Inductive load)
Switching Characteristics (Typical) (3)
10000
Collector Current I
C
(A)
(Inductive load)
Switching Characteristics (Typical) (4)
10000
1000
td(off)
Swithing Energy Losses E (μJ)
Switching Times t (ns)
V
CC
= 300 V, V
GE
= 15 V
I
C
= 50 A, Ta = 25
°
C
V
CC
= 300 V, V
GE
= 15 V
I
C
= 50 A, Ta = 25
°
C
E(off)
1000
E(on)
100
td(on)
tr tf
10
2
5
10
20
50
100
2
5
10
20
50
Gate Registance Rg (Ω)
(Inductive load)
Gate Registance Rg (Ω)
(Inductive load)
R07DS0176EJ0200 Rev.2.00
Nov 16, 2010
Page 5 of 7
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