Preliminary
Datasheet
RJH60D6DPM
Silicon N Channel IGBT
Application: Inverter
Features
Short circuit withstand time (5
s
typ.)
Low collector to emitter saturation voltage
V
CE(sat)
= 1.6 V typ. (at I
C
= 40 A, V
GE
= 15 V, Ta = 25°C)
Built in fast recovery diode (100 ns typ.) in one package
Trench gate and thin wafer technology
High speed switching
t
f
= 50 ns typ. (at V
CC
= 300 V, V
GE
= 15 V, I
C
= 40 A, Rg = 5
,
Ta = 25°C, inductive load)
R07DS0175EJ0200
Rev.2.00
Nov 16, 2010
Outline
RENESAS Package code: PRSS0003ZA-A
(Package name: TO-3PFM)
C
G
1. Gate
2. Collector
3. Emitter
E
1
2
3
Absolute Maximum Ratings
(Ta = 25°C)
Item
Collector to emitter voltage / diode reverse voltage
Gate to emitter voltage
Collector current
Tc = 25°C
Tc = 100°C
Collector peak current
Collector to emitter diode forward current
Collector to emitter diode forward peak current
Collector dissipation
Junction to case thermal resistance (IGBT)
Junction to case thermal resistance (Diode)
Junction temperature
Storage temperature
Notes: 1. PW
10
s,
duty cycle
1%
2. Value at Tc = 25C
Symbol
V
CES
/ V
R
V
GES
I
C
I
C
ic(peak)
i
DF
i
DF
(peak)
Note1
P
C Note2
j-c
Note2
j-cd
Note2
Tj
Tstg
Note1
Ratings
600
±30
80
40
160
30
120
50
2.5
3.95
150
–55 to +150
Unit
V
V
A
A
A
A
A
W
°C/ W
°C/ W
°C
°C
R07DS0175EJ0200 Rev.2.00
Nov 16, 2010
Page 1 of 7
RJH60D6DPM
Preliminary
Electrical Characteristics
(Ta = 25°C)
Item
Zero gate voltage collector current
/ Diode reverse current
Gate to emitter leak current
Gate to emitter cutoff voltage
Collector to emitter saturation voltage
Input capacitance
Output capacitance
Reveres transfer capacitance
Total gate charge
Gate to emitter charge
Gate to collector charge
Switching time
Symbol
I
CES
/ I
R
I
GES
V
GE(off)
V
CE(sat)
V
CE(sat)
Cies
Coes
Cres
Qg
Qge
Qgc
t
d(on)
t
r
t
d(off)
t
f
t
sc
V
F
t
rr
Min
—
—
4.0
—
—
—
—
—
—
—
—
—
—
—
—
3.0
—
—
Typ
—
—
—
1.6
1.8
2500
140
80
104
15
45
55
40
150
50
5.0
1.4
100
Max
5
±1
6.0
2.2
—
—
—
—
—
—
—
—
—
—
—
—
1.9
—
Unit
A
A
V
V
V
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
s
V
ns
Test Conditions
V
CE
= 600 V, V
GE
= 0
V
GE
= ±30 V, V
CE
= 0
V
CE
= 10 V, I
C
= 1 mA
I
C
= 40 A, V
GE
= 15 V
Note3
I
C
= 80 A, V
GE
= 15 V
Note3
V
CE
= 25 V
V
GE
= 0
f = 1 MHz
V
GE
= 15 V
V
CE
= 300 V
I
C
= 40 A
V
CC
= 300 V, V
GE
= 15 V
I
C
= 40 A
Rg = 5
(Inductive load)
V
CC
400 V, V
GE
= 15 V
I
F
= 30 A
Note3
I
F
= 30 A
di
F
/dt = 100 A/s
Short circuit withstand time
FRD Forward voltage
FRD reverse recovery time
Notes: 3. Pulse test.
R07DS0175EJ0200 Rev.2.00
Nov 16, 2010
Page 2 of 7
RJH60D6DPM
Preliminary
Main Characteristics
Collector Dissipation vs.
Case Temperature
60
100
Maximum DC Collector Current vs.
Case Temperature
Collector Dissipation Pc (W)
Collector Current I
C
(A)
0
25
50
75
100 125 150 175
50
40
30
20
10
0
80
60
40
20
0
0
25
50
75
100 125 150 175
Case Temperature Tc (°C)
Case Temperature Tc (°C)
Maximum Safe Operation Area
1000
200
Turn-off SOA
Collector Current I
C
(A)
Collector Current I
C
(A)
1000
100
PW
10
0
μ
s
160
=
10
μ
s
120
10
80
1
Tc = 25°C
Single pulse
40
0.1
1
0
10
100
0
200
400
600
800
Collector to Emitter Voltage V
CE
(V)
Collector to Emitter Voltage V
CE
(V)
Typical Output Characteristics
160
160
Ta = 25
°
C
Pulse Test
120
13 V
15 V
80
9V
11 V
Typical Output Characteristics
Ta = 150
°
C
Pulse Test
120
13 V
15 V
80
11 V
Collector Current I
C
(A)
Collector Current I
C
(A)
10 V
10 V
9V
40
V
GE
= 8 V
V
GE
= 8 V
40
0
0
1
2
3
4
5
0
0
1
2
3
4
5
Collector to Emitter Voltage V
CE
(V)
Collector to Emitter Voltage V
CE
(V)
R07DS0175EJ0200 Rev.2.00
Nov 16, 2010
Page 3 of 7
RJH60D6DPM
Collector to Emitter Saturation Voltage
vs. Gate to Emitter Voltage (Typical)
Preliminary
Collector to Emitter Saturation Voltage
vs. Gate to Emitter Voltage (Typical)
Collector to Emitter Saturation Voltage
V
CE(sat)
(V)
8
Ta = 25
°
C
Pulse Test
6
I
C
= 40 A
80 A
4
Collector to Emitter Saturation Voltage
V
CE(sat)
(V)
8
Ta = 150
°
C
Pulse Test
6
I
C
= 40 A
80 A
4
2
2
0
0
4
8
12
16
20
0
0
4
8
12
16
20
Gate to Emitter Voltage V
GE
(V)
Gate to Emitter Voltage V
GE
(V)
Typical Transfer Characteristics
160
Diode Forward Characteristics (Typical)
120
Collector Current I
C
(A)
Ta = 25
°
C
120
150
°
C
Forward Current I
F
(A)
100
Ta = 25
°
C
80
60
40
20
0
0
1
2
3
4
150
°
C
80
40
V
CE
= 10 V
Pulse Test
0
0
4
8
12
16
V
CE
= 0 V
Pulse Test
Gate to Emitter Voltage V
GE
(V)
Typical Capacitance vs.
Colloctor to Emitter Voltage
10000
Ta = 25
°
C
Cies
Forward Voltage V
F
(V)
Capacitance C (pF)
1000
100
Coes
V
GE
= 0 V
f = 1 MHz
10
0
50
100
150
200
250
300
Cres
Colloctor to Emitter Voltage V
CE
(V)
R07DS0175EJ0200 Rev.2.00
Nov 16, 2010
Page 4 of 7
RJH60D6DPM
Switching Characteristics (Typical) (1)
1000
Preliminary
Switching Characteristics (Typical) (2)
10000
Swithing Energy Losses E (μJ)
Switching Times t (ns)
E(on)
1000
E(off)
100
td(off)
tf
td(on)
10
tr
V
CC
= 300 V, V
GE
= 15 V
Rg = 5
Ω,
Ta = 25
°
C
100
1
1
10
100
1000
10
1
V
CC
= 300 V, V
GE
= 15 V
Rg = 5
Ω,
Ta = 25
°
C
10
100
1000
Collector Current I
C
(A)
(Inductive load)
Switching Characteristics (Typical) (3)
10000
V
CC
= 300 V, V
GE
= 15 V
I
C
= 40 A, Ta = 25
°
C
1000
td(off)
100
td(on)
tf
10
2
5
10
20
50
tr
Collector Current I
C
(A)
(Inductive load)
Switching Characteristics (Typical) (4)
10000
Swithing Energy Losses E (μJ)
Switching Times t (ns)
V
CC
= 300 V, V
GE
= 15 V
I
C
= 40 A, Ta = 25
°
C
E(on)
1000
E(off)
100
2
5
10
20
50
Gate Registance Rg (Ω)
(Inductive load)
Gate Registance Rg (Ω)
(Inductive load)
R07DS0175EJ0200 Rev.2.00
Nov 16, 2010
Page 5 of 7
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