Preliminary
Datasheet
RJH60D3DPP-M0
Silicon N Channel IGBT
Application: Inverter
Features
Short circuit withstand time (5
s
typ.)
Low collector to emitter saturation voltage
V
CE(sat)
= 1.6 V typ. (at I
C
= 17 A, V
GE
= 15 V, Ta = 25°C)
Built in fast recovery diode (100 ns typ.) in one package
Trench gate and thin wafer technology
High speed switching
t
f
= 80 ns typ. (at V
CC
= 300 V, V
GE
= 15 V, I
C
= 17 A, Rg = 5
,
Ta = 25°C)
R07DS0162EJ0300
Rev.3.00
Mar 09, 2011
Outline
RENESAS Package code: PRSS0003AF-A
(Package name: TO-220FL)
C
G
1. Gate
2. Collector
3. Emitter
1
2 3
E
Absolute Maximum Ratings
(Ta = 25°C)
Item
Collector to emitter voltage / diode reverse voltage
Gate to emitter voltage
Collector current
Tc = 25°C
Tc = 100°C
Collector peak current
Collector to emitter diode forward current
Collector to emitter diode forward peak current
Collector dissipation
Junction to case thermal resistance (IGBT)
Junction to case thermal resistance (Diode)
Junction temperature
Storage temperature
Notes: 1. PW
10
s,
duty cycle
1%
2. Value at Tc = 25C
Symbol
V
CES
/ V
R
V
GES
I
C
I
C
ic(peak)
Note1
i
DF
i
DF
(peak)
Note1
Note2
P
C
j-c
Note2
j-cd
Note2
Tj
Tstg
Ratings
600
±30
35
17
70
17
70
30
4.17
6.0
150
–55 to +150
Unit
V
V
A
A
A
A
A
W
°C/ W
°C/ W
°C
°C
R07DS0162EJ0300 Rev.3.00
Mar 09, 2011
Page 1 of 7
RJH60D3DPP-M0
Preliminary
Electrical Characteristics
(Ta = 25°C)
Item
Zero gate voltage collector current
/ Diode reverse current
Gate to emitter leak current
Gate to emitter cutoff voltage
Collector to emitter saturation voltage
Input capacitance
Output capacitance
Reveres transfer capacitance
Total gate charge
Gate to emitter charge
Gate to collector charge
Switching time
Symbol
I
CES
/ I
R
I
GES
V
GE(off)
V
CE(sat)
V
CE(sat)
Cies
Coes
Cres
Qg
Qge
Qgc
t
d(on)
t
r
t
d(off)
t
f
t
sc
V
F
t
rr
Min
—
—
4.0
—
—
—
—
—
—
—
—
—
—
—
—
3.0
—
—
Typ
—
—
—
1.6
2.0
900
60
30
36
6
16
30
15
80
80
5.0
1.3
100
Max
5
±1
6.0
2.2
—
—
—
—
—
—
—
—
—
—
—
—
1.7
—
Unit
A
A
V
V
V
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
s
V
ns
Test Conditions
V
CE
= 600 V, V
GE
= 0
V
GE
= ±30 V, V
CE
= 0
V
CE
= 10 V, I
C
= 1 mA
I
C
= 17 A, V
GE
= 15 V
Note3
I
C
= 35 A, V
GE
= 15 V
Note3
V
CE
= 25 V
V
GE
= 0
f = 1 MHz
V
GE
= 15 V
V
CE
= 300 V
I
C
= 17 A
V
CC
= 300 V, V
GE
= 15 V
I
C
= 17 A
Rg = 5
Inductive load
V
CC
360 V, V
GE
= 15 V
I
F
= 17 A
Note3
I
F
= 17 A
di
F
/dt = 100 A/s
Short circuit withstand time
FRD Forward voltage
FRD reverse recovery time
Notes: 3. Pulse test.
R07DS0162EJ0300 Rev.3.00
Mar 09, 2011
Page 2 of 7
RJH60D3DPP-M0
Preliminary
Main Characteristics
Power Dissipation vs.
Case Temperature
40
40
Maximum DC Collector Current vs.
Case Temperature
Collector Dissipation Pc (W)
30
Collector Current I
C
(A)
30
20
20
10
10
0
0
25
50
75
100 125 150 175
0
0
25
50
75
100 125 150 175
Case Temperature Tc (°C)
Case Temperature Tc (°C)
Maximum Safe Operation Area
1000
80
Turn-off SOA
Collector Current I
C
(A)
Collector Current I
C
(A)
1000
100
10
0
PW
μ
s
60
=
10
μ
s
10
40
1
Tc = 25°C
Single pulse
20
0.1
1
0
10
100
0
200
400
600
800
Collector to Emitter Voltage V
CE
(V)
Collector to Emitter Voltage V
CE
(V)
IGBT Output Characteristics (Typical)
70
70
IGBT Output Characteristics (Typical)
Collector Current I
C
(A)
Collector Current I
C
(A)
60
50
40
30
20
10
0
0
1
15 V
18 V
12 V
10 V
60
50
40
30
20
10
0
12 V
15 V
18 V
10 V
V
GE
= 8 V
Tc = 25
°
C
Pulse Test
2
3
4
5
V
GE
= 8 V
Tc = 150
°
C
Pulse Test
0
1
2
3
4
5
Collector to Emitter Voltage V
CE
(V)
Collector to Emitter Voltage V
CE
(V)
R07DS0162EJ0300 Rev.3.00
Mar 09, 2011
Page 3 of 7
RJH60D3DPP-M0
Collector to Emitter Satularion Voltage vs.
Gate to Emitter Voltage (Typical)
6
5
4
3
2
1
0
0
4
8
12
16
20
Tc = 25
°
C
Pulse Test
I
C
= 17 A
35 A
Preliminary
Collector to Emitter Satularion Voltage vs.
Gate to Emitter Voltage (Typical)
6
5
4
3
2
1
0
0
4
8
12
16
20
Tc = 150
°
C
Pulse Test
I
C
= 17 A
35 A
Collector to Emitter Satularion Voltage
V
CE(sat)
(V)
Gate to Emitter Voltage V
GE
(V)
Collector to Emitter Satularion Voltage
V
CE(sat)
(V)
Gate to Emitter Voltage V
GE
(V)
Transfer Characteristics (Typical)
70
Diode Forward Characteristics (Typical)
70
Collector Current I
C
(A)
50
40
30
20
10
0
0
4
Tc = 25
°
C
150
°
C
Forward Current I
F
(A)
60
60
50
Tc = 25
°
C
40
30
20
10
0
V
GE
= 0 V
Pulse Test
0
0.5
1.0
1.5
2.0
2.5
3.0
150
°
C
V
CE
= 10 V
Pulse Test
8
12
16
Gate to Emitter Voltage V
GE
(V)
Forward Voltege V
F
(V)
R07DS0162EJ0300 Rev.3.00
Mar 09, 2011
Page 4 of 7
RJH60D3DPP-M0
Switching Characteristics (Typical) (1)
1000
Preliminary
Switching Characteristics (Typical) (2)
10000
Swithing Energy Losses E (μJ)
Switching Times t (ns)
V
CC
= 300 V, V
GE
= 15 V
Rg = 5
Ω,
Ta = 25
°
C
1000
100
td(off)
tf
td(on)
tr
V
CC
= 300 V, V
GE
= 15 V
Rg = 5
Ω,
Ta = 25
°
C
2
5
10
20
50
Eoff
100
Eon
10
1
10
2
5
10
20
50
100
Collector Current I
C
(A)
(Inductive load)
Switching Characteristics (Typical) (3)
1000
Collector Current I
C
(A)
(Inductive load)
Switching Characteristics (Typical) (4)
1000
Swithing Energy Losses E (μJ)
Switching Times t (ns)
V
CC
= 300 V, V
GE
= 15 V
I
C
= 17 A, Ta = 25
°
C
Eoff
Eon
100
100
td(off)
tf
td(on)
tr
10
2
5
10
20
50
10
2
5
V
CC
= 300 V, V
GE
= 15 V
I
C
= 17 A, Ta = 25
°
C
10
20
50
Gate Registance Rg (Ω)
(Inductive load)
Gate Registance Rg (Ω)
(Inductive load)
R07DS0162EJ0300 Rev.3.00
Mar 09, 2011
Page 5 of 7
stm32/stm8
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