Preliminary
Datasheet
RJH60D1DPE
Silicon N Channel IGBT
Application: Inverter
Features
Short circuit withstand time (5
s
typ.)
Low collector to emitter saturation voltage
V
CE(sat)
= 1.9 V typ. (at I
C
= 10 A, V
GE
= 15 V, Ta = 25°C)
Built in fast recovery diode (100 ns typ.) in one package
Trench gate and thin wafer technology
High speed switching
t
f
= 90 ns typ. (at V
CC
= 300 V, V
GE
= 15 V, I
C
= 10 A, Rg = 5
,
, inductive load)
R07DS0157EJ0300
Rev.3.00
Nov 16, 2010
Outline
RENESAS Package code: PRSS0004AE-B
(Package name: LDPAK (S)-(1) )
C
4
G
1
2
3
E
1. Gate
2. Collector
3. Emitter
4. Collector
Absolute Maximum Ratings
(Ta = 25°C)
Item
Collector to emitter voltage / diode reverse voltage
Gate to emitter voltage
Collector current
Tc = 25°C
Tc = 100°C
Collector peak current
Collector to emitter diode forward current
Collector to Emitter diode forward peak current
Collector dissipation
Junction to case thermal resistance (IGBT)
Junction to case thermal resistance (Diode)
Junction temperature
Storage temperature
Notes: 1. PW
10
s,
duty cycle
1%
2. Value at Tc = 25C
Symbol
V
CES
/ V
R
V
GES
I
C
I
C
ic(peak)
Note1
i
DF
i
DF
(peak)
Note1
Note2
P
C
j-c
Note2
j-cd
Note2
Tj
Tstg
Ratings
600
±30
20
10
40
10
40
52
2.4
4.2
150
–55 to +150
Unit
V
V
A
A
A
A
A
W
°C/ W
°C/ W
°C
°C
R07DS0157EJ0300 Rev.3.00
Nov 16, 2010
Page 1 of 7
RJH60D1DPE
Preliminary
Electrical Characteristics
(Ta = 25°C)
Item
Zero gate voltage collector current
/ Diode reverse current
Gate to emitter leak current
Gate to emitter cutoff voltage
Collector to emitter saturation voltage
Input capacitance
Output capacitance
Reveres transfer capacitance
Total gate charge
Gate to emitter charge
Gate to collector charge
Switching time
Symbol
I
CES
/ I
R
I
GES
V
GE(off)
V
CE(sat)
V
CE(sat)
Cies
Coes
Cres
Qg
Qge
Qgc
t
d(on)
t
r
t
d(off)
t
f
t
sc
V
F
t
rr
Min
—
—
4.0
—
—
—
—
—
—
—
—
—
—
—
—
3.0
—
—
Typ
—
—
—
1.9
2.6
275
25
7.5
12.0
2.0
6.0
30
13
80
90
5.0
1.4
100
Max
5
±1
6.0
2.5
—
—
—
—
—
—
—
—
—
—
—
—
1.9
—
Unit
A
A
V
V
V
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
s
V
ns
Test Conditions
V
CE
= 600 V, V
GE
= 0
V
GE
= ±30 V, V
CE
= 0
V
CE
= 10 V, I
C
= 1 mA
I
C
= 10 A, V
GE
= 15 V
Note3
I
C
= 20 A, V
GE
= 15 V
Note3
V
CE
= 25 V
V
GE
= 0
f = 1 MHz
V
GE
= 15 V
V
CE
= 300 V
I
C
= 10 A
V
CC
= 300V, V
GE
= 15 V
I
C
= 10 A,
Rg = 5
Inductive load
V
CC
360V, V
GE
= 15 V
I
F
= 10 A
Note3
I
F
= 10 A
di
F
/dt = 100 A/s
Short circuit withstand time
FRD forward voltage
FRD reverse recovery time
Notes: 3. Pulse test.
R07DS0157EJ0300 Rev.3.00
Nov 16, 2010
Page 2 of 7
RJH60D1DPE
Preliminary
Main Characteristics
Collector Dissipation vs.
Case Temperature
60
30
Maximum DC Collector Current vs.
Case Temperature
Collector Dissipation Pc (W)
40
30
20
10
0
0
25
50
75
100 125 150 175
Collector Current I
C
(A)
50
25
20
15
10
5
0
0
25
50
75
100 125 150 175
Case Temperature Tc (°C)
Case Temperature Tc (°C)
Maximum Safe Operation Area
100
60
Turn-off SOA
Collector Current I
C
(A)
=
10
10
0
μ
s
10
μ
s
Collector Current I
C
(A)
1000
PW
50
40
30
20
10
0
1
0.1
Tc = 25°C
Single pulse
10
100
0.01
1
0
200
400
600
800
Collector to Emitter Voltage V
CE
(V)
Collector to Emitter Voltage V
CE
(V)
IGBT Output Characteristics (Typical)
40
40
Ta = 25
°
C
Pulse Test
30
18 V
IGBT Output Characteristics (Typical)
Ta = 150
°
C
Pulse Test
30
12 V
20
10 V
10
18 V
15 V
15 V
12 V
Collector Current I
C
(A)
20
10 V
10
Collector Current I
C
(A)
V
GE
= 8 V
V
GE
= 8 V
0
0
1
2
3
4
5
0
0
1
2
3
4
5
Collector to Emitter Voltage V
CE
(V)
Collector to Emitter Voltage V
CE
(V)
R07DS0157EJ0300 Rev.3.00
Nov 16, 2010
Page 3 of 7
RJH60D1DPE
Collector to Emitter Satularion Voltage vs.
Gate to Emitter Voltage (Typical)
6
5
I
C
= 10 A
4
3
2
1
0
20 A
Ta = 25
°
C
Pulse Test
Preliminary
Collector to Emitter Satularion Voltage vs.
Gate to Emitter Voltage (Typical)
6
5
4
3
2
1
0
Ta = 150
°
C
Pulse Test
I
C
= 10 A
20 A
Collector to Emitter Satularion Voltage
V
CE(sat)
(V)
Collector to Emitter Satularion Voltage
V
CE(sat)
(V)
0
4
8
12
16
20
0
4
8
12
16
20
Gate to Emitter Voltage V
GE
(V)
Gate to Emitter Voltage V
GE
(V)
Transfer Characteristics (Typical)
30
V
CE
= 10 V
Pulse Test
Diode Forward Characteristics (Typical)
40
Collector Current I
C
(A)
Forward Current I
F
(A)
25
20
15
10
5
0
0
Ta = 25
°
C
30
150
°
C
Ta = 25
°
C
150
°
C
20
10
V
CE
= 0 V
Pulse Test
0
0
1
2
3
4
4
8
12
16
Gate to Emitter Voltage V
GE
(V)
Forward Voltege V
F
(V)
R07DS0157EJ0300 Rev.3.00
Nov 16, 2010
Page 4 of 7
RJH60D1DPE
Switching Characteristics (Typical) (1)
1000
Preliminary
Switching Characteristics (Typical) (2)
10000
Swithing Energy Losses E (μJ)
Switching Times t (ns)
V
CC
= 300 V, V
GE
= 15 V
Rg = 5
Ω,
Ta = 25
°
C
1000
100
tf
td(off)
td(on)
Eoff
100
Eon
10
tr
V
CC
= 300 V, V
GE
= 15 V
Rg = 5
Ω,
Ta = 25
°
C
2
5
10
20
50
1
10
2
5
10
20
50
Collector Current I
C
(A)
(Inductive load)
Switching Characteristics (Typical) (3)
1000
Collector Current I
C
(A)
(Inductive load)
Switching Characteristics (Typical) (4)
1000
Swithing Energy Losses E (μJ)
Switching Times t (ns)
V
CC
= 300 V, V
GE
= 15 V
I
C
= 10 A, Ta = 25
°
C
V
CC
= 300 V, V
GE
= 15 V
I
C
= 10 A, Ta = 25
°
C
100
td(off)
tf
td(on)
tr
2
5
10
20
50
100
Eoff
Eon
10
10
2
5
10
20
50
Gate Registance Rg (Ω)
(Inductive load)
Gate Registance Rg (Ω)
(Inductive load)
R07DS0157EJ0300 Rev.3.00
Nov 16, 2010
Page 5 of 7
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