Preliminary
Datasheet
RJH6087BDPK
Silicon N Channel IGBT
High Speed Power Switching
Features
•
Ultra high speed switching
t
f
= 55 ns typ. (at I
C
= 30 A, V
CC
= 300 V, V
GE
= 15 V, Rg = 5
Ω,
Inductive Load)
•
Low on-state voltage
•
Fast recovery diode
R07DS0389EJ0100
Rev.1.00
May 11, 2011
Outline
RENESAS Package code: PRSS0004ZE-A
(Package name: TO-3P)
C
4
G
1. Gate
2. Collector
3. Emitter
4. Collector (Flange)
E
1
2
3
Absolute Maximum Ratings
(Tc = 25°C)
Item
Collector to emitter voltage
Gate to emitter voltage
Collector current
Collector peak current
Collector to emitter diode forward peak current
Collector dissipation
Junction to case thermal impedance (IGBT)
Junction temperature
Storage temperature
Symbol
V
CES
V
GES
I
C
ic(peak)
Note1
i
DF
(peak)
Note2
P
C
θj-c
Tj
Tstg
Ratings
600
±30
50
100
100
223.2
0.56
150
–55 to +150
Unit
V
V
A
A
A
W
°C / W
°C
°C
Notes: 1. Pulse width limited by safe operating area.
2. Pulse width limited by maximum junction temperature.
R07DS0389EJ0100 Rev.1.00
May 11, 2011
Page 1 of 7
RJH6087BDPK
Preliminary
Electrical Characteristics
(Ta = 25°C)
Item
Zero gate voltage collector current
Gate to emitter leak current
Gate to emitter cutoff voltage
Collector to emitter saturation voltage
Input capacitance
Output capacitance
Reveres transfer capacitance
Switching time
Symbol
I
CES
I
GES
V
GE(off)
V
CE(sat)
V
CE(sat)
Cies
Coes
Cres
t
d(on)
t
r
t
d(off)
t
f
V
ECF1
t
rr
Min
—
—
3.0
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
2.65
3.2
1800
200
16
45
35
95
55
1.4
100
Max
10
±1
5.5
3.5
—
—
—
—
—
—
—
—
1.9
—
Unit
μA
μA
V
V
V
pF
pF
pF
ns
ns
ns
ns
V
ns
Test Conditions
V
CE
= 600 V, V
GE
= 0
V
GE
= ±30 V, V
CE
= 0
V
CE
= 10 V, I
C
= 1 mA
I
C
= 25 A, V
GE
= 15 V
Note3
I
C
= 50 A, V
GE
= 15 V
Note3
V
CE
= 25 V
V
GE
= 0
f = 1 MHz
I
C
= 30 A
V
CC
= 300 V, V
GE
= 15 V
Rg = 5
Ω
Inductive Load
I
F
= 30 A
Note3
I
F
= 30 A
di
F
/dt = 100 A/μs
C-E diode Forward voltage
C-E diode reverse recovery time
Notes: 3. Pulse test
R07DS0389EJ0100 Rev.1.00
May 11, 2011
Page 2 of 7
RJH6087BDPK
Preliminary
Main Characteristics
Maximum Safe Operation Area
1000
100
Typical Output Characteristics
Ta = 25
°
C
Pulse Test
Collector Current I
C
(A)
Collector Current I
C
(A)
100
10
1
0.1
0.01
PW = 10
μs
80
8.4 V
9V
10 V
8V
7.6 V
7.2 V
6.8 V
60
13 V
15 V
40
20
0.001
0.1
Ta = 25
°
C
1 shot pulse
1
10
100
1000
V
GE
= 6.4 V
0
0
1
2
3
4
5
6
Collector to Emitter Voltage V
CE
(V)
Collector to Emitter Voltage V
CE
(V)
Collector to Emitter Saturation Voltage
vs. Gate to Emitter Voltage (Typical)
Typical Transfer Characteristics
100
Collector to Emitter Saturation Voltage
V
CE(sat)
(V)
8
Ta = 25
°
C
Pulse Test
6
Collector Current I
C
(A)
V
CE
= 10 V
Pulse Test
80
60
Ta = 75°C
40
25°C
20
–25°C
4
I
C
= 50 A
2
25 A
0
4
8
12
16
20
20 A 10 A
0
2
4
6
8
10
12
Gate to Emitter Voltage V
GE
(V)
Collector to Emitter Saturation Voltage
vs. Junction Temparature (Typical)
Gate to Emitter Voltage V
GE
(V)
Gate to Emitter Cutoff Voltage
vs. Junction Temparature (Typical)
10
7
6
5
4
3
2
1
−25
V
GE
= 15 V
Pulse Test
I
C
= 100 A
Gate to Emitter Cutoff Voltage V
GE(off)
(V)
Collector to Emitter Saturation Voltage
V
CE(sat)
(V)
8
6
I
C
= 10 mA
50 A
25 A
20 A
10 A
4
1 mA
2
V
CE
= 10 V
Pulse Test
0
−25
0
25
50
75
100 125
150
0
25
50
75
100 125 150
Junction Temparature Tj (
°
C)
Junction Temparature Tj (
°
C)
R07DS0389EJ0100 Rev.1.00
May 11, 2011
Page 3 of 7
RJH6087BDPK
Preliminary
Typical Capacitance vs.
Collector to Emitter Voltage
10000
Cies
Forward Current vs. Forward Voltage (Typical)
100
Diode Forward Current I
F
(A)
Capacitance C (pF)
80
1000
60
100
Coes
40
V
GE
= 0 V
Ta = 25
°
C
Pulse Test
0
1
2
3
4
20
0
10
V
GE
= 0 V
f = 1 MHz
Ta = 25
°
C
0
50
100
150
Cres
1
200
250
C-E Diode Forward Voltage V
CEF
(V)
Collector to Emitter Voltage V
CE
(V)
Dynamic Input Characteristics (Typical)
Collector to Emitter Voltage V
CE
(V)
I
C
= 50 A
Ta = 25
°
C
V
GE
600
V
CE
400
V
CC
= 480 V
300 V
100 V
12
8
200
V
CC
= 480 V
300 V
100 V
0
20
40
60
80
4
0
0
100
Gate Charge Qg (nc)
R07DS0389EJ0100 Rev.1.00
May 11, 2011
Gate to Emitter Voltage V
GE
(V)
800
16
Page 4 of 7
RJH6087BDPK
Switching Characteristics (Typical) (1)
1000
V
CC
= 300 V, V
GE
= 15 V
Rg = 5
Ω,
Tj = 25
°
C, Inductive load
Preliminary
Switching Characteristics (Typical) (2)
10000
Swithing Energy Losses E (μJ)
Switching Times t (ns)
1000
100
td(off)
tf
td(on)
tr
100
Eoff
10
Eon
1
V
CC
= 300 V, V
GE
= 15 V
Rg = 5
Ω,
Tj = 25
°
C, Inductive load
0.1
1
10
100
10
1
10
100
Collector Current I
C
(A)
Collector Current I
C
(A)
Switching Characteristics (Typical) (3)
1000
V
CC
= 300 V, V
GE
= 15 V
I
C
= 50 A, Tj = 25
°
C, Inductive load
Switching Characteristics (Typical) (4)
10000
Swithing Energy Losses E (μJ)
Switching Times t (ns)
Eoff
1000
Eon
100
td(off)
100
tf
td(on)
tr
10
1
10
100
10
1
V
CC
= 300 V, V
GE
= 15 V
I
C
= 50 A, Tj = 25
°
C, Inductive load
10
100
Gate Resistance Rg (Ω)
Gate Resistance Rg (Ω)
Switching Characteristics (Typical) (5)
1000
Switching Characteristics (Typical) (6)
10000
Swithing Energy Losses E (μJ)
Switching Times t (ns)
V
CC
= 300 V, V
GE
= 15 V
I
C
= 50 A, Rg = 5
Ω,
Inductive load
Eoff
1000
Eon
100
100
td(off)
tf
tr
td(on)
10
25
50
75
100
125
150
10
25
V
CC
= 300 V, V
GE
= 15 V
I
C
= 50 A, Rg = 5
Ω,
Inductive load
50
75
100
125
150
Junction Temperature Tj (°C)
Junction Temperature Tj (°C)
R07DS0389EJ0100 Rev.1.00
May 11, 2011
Page 5 of 7
模拟电子
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
